IDW40G65C5B [INFINEON]
650V SiC Schottky Diode;型号: | IDW40G65C5B |
厂家: | Infineon |
描述: | 650V SiC Schottky Diode |
文件: | 总11页 (文件大小:707K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW40G65C5B
Final Datasheet
Rev. 2.0, 2015-04-13
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
Description
IDW40G65C5B
1
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thin-
wafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 44 mA2) 3)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters 4)
Parameter
VDC
Value
650
Unit
V
QC; VR=400V
EC; VR=400V
IF @ TC < 120°C
2 x 29
2 x 6.6
2 x 20
nC
µJ
A
Table 2
Pin 1
A
Pin Definition
Pin 2
C
Pin 3
A
Type / ordering Code
Package
Marking
Related links
IDW40G65C5B
PG-TO247-3
D4065B5
www.infineon.com/sic
1)
2)
3)
4)
J-STD20 and JESD22
All devices tested under avalanche conditions for a time periode of 10ms
Per Leg
Per Device
Final Datasheet
2
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Table of contents
Table of Contents
1
2
3
4
5
6
7
8
Description..........................................................................................................................................2
Maximum ratings................................................................................................................................4
Thermal characteristics.....................................................................................................................4
Electrical characteristics...................................................................................................................5
Electrical characteristics diagrams..................................................................................................6
Simplified Forward Characteristics Model ......................................................................................8
Package outlines................................................................................................................................9
Revision History...............................................................................................................................10
Final Datasheet
3
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Maximum ratings
2
Maximum ratings
Table 3
Maximum ratings
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
–
Typ.
–
Max.
20
Continuous forward current 1)
IF
TC < 120°C, D=1
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
TC = 25°C, tp=10 µs
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Tj = 25°C
103
87
Surge non-repetitive forward current, sine IF,SM
–
–
halfwave 1)
Non-repetitive peak forward current 1)
i²t value 1)
A
–
–
776
53
IF,max
–
–
∫ i²dt
–
–
A²s
38
–
–
650
100
112
175
60
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation 1)
VRRM
dv/dt
Ptot
–
–
V
–
–
V/ns
W
VR=0..480 V
–
–
TC = 25°C
Operating and storage temperature
Mounting torque
Tj;Tstg
-55
–
–
°C
–
Ncm
M3 screws
3
Thermal characteristics
Table 4
Thermal characteristics TO-247-3
Parameter
Symbol
Values
Typ.
1.0
Unit
Note/Test Condition
Min.
Max.
Thermal resistance, junction-case 1)
Thermal resistance, junction-ambient 1) RthJA
RthJC
–
1.3
K/W
°C
leaded
62
–
–
–
–
Soldering temperature, wavesoldering Tsold
only allowed at leads
1.6mm (0.063 in.) from
case for 10 s
260
1)
2)
Per Leg
Per Device
Final Datasheet
4
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Electrical characteristics
4
Electrical characteristics
Table 5
Static characteristics
Parameter
Symbol
Values
Typ.
–
Unit
Note/Test Condition
Tj=25°C
Min.
650
–
Max.
–
DC blocking voltage
Diode forward voltage
VDC
VF
1.5
1.7
2.1
210
75
V
IF= 20 A, Tj=25°C
IF= 20 A, Tj=150°C
VR=650 V, Tj=25°C
VR=600 V, Tj=25°C
VR=650 V, Tj=150°C
–
1.8
Reverse current 1)
IR
–
1.1
–
0.3
µA
–
4.1
1450
Table 6
AC characteristics
Parameter
Symbol
Values
Typ.
Unit
Note/Test Condition
Min.
Max.
Total capacitive charge 1)
Total Capacitance 1)
Qc
C
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C
29
–
nC
pF
–
–
–
590
76
–
–
–
VR=1 V, f=1 MHz
VR=300 V, f=1 MHz
VR=600 V, f=1 MHz
74
1)
2)
Per Leg
Per Device
Final Datasheet
5
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation 1)
Maximal diode forward current 1)
160
120
100
80
60
40
20
0
0.1
0.3
0.5
0.7
1
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC[°C]
TC[°C]
Ptot=f(TC); RthJC,max
IF=f(TC); RthJC,max;Tj≤175°C; parameter D=duty cycle
Table 8
Typical forward characteristics 1)
Typical forward characteristics in surge current 1)
40
200
180
160
140
35
-55°C
30
25
20
15
10
5
25°C
-55°C
120
100°C
100
25°C
80
100°C
150°C
175°C
60
40
150°C
175°C
20
0
0
0
1
2
3
4
5
6
0
1
2
3
VF [V]
VF [V]
IF=f(VF); tp=200 µs; parameter: Tj
IF=f(VF); tp=200 µs; parameter: Tj
1)
2)
Per Leg
Per Device
Final Datasheet
6
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope 1)
Typ. Reverse current vs. reverse voltage 1)
1.E-4
30
25
20
15
10
5
1.E-5
1.E-6
175°C
1.E-7
150°C
1.E-8
100°C
-55°C
25°C
400
1.E-9
100
0
100
200
300
VR [V]
500
600
300
500
700
900
dIF/dt [A/µs]
QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max
IR=f(VR); parameter: Tj
Table 10
Max. transient thermal impedance 1)
Typ. capacitance vs. reverse voltage 1)
800
700
600
500
400
300
200
100
0
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1.E-06
1.E-03
1.E+00
0
1
10
100
1000
tp [s]
VR [V]
Zth,jc=f(tP); parameter: D=tP/T
C=f(VR); Tj=25°C; f=1 MHz
1)
2)
Per Leg
Per Device
Final Datasheet
7
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Electrical characteristics diagrams
Table 11
Typ. capacitance stored energy 1)
18
16
14
12
10
8
6
4
2
0
0
200
400
600
VR [V]
EC=f(VR)
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve 1)
Mathematical Equation
VF VTH RDIFF IF
VTH
Tj
0.001Tj 1.04
V
2
RDIFF
Tj
6.410-7 Tj 6.410-5 Tj 0.023
1/Rdiff
Vth
VF [V]
VF=f(IF)
Tj in °C; -55°C < Tj < 175°C; IF < 40 A
1)
2)
Per Leg
Per Device
Final Datasheet
8
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
7
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
1)
2)
Per Leg
Per Device
Final Datasheet
9
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5B
Revision History
8
Revision History
5th Generation thinQ!TM SiC Schottky Diode
Revision History: 2015-04-13, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last version)
Release of the final datasheet.
2.0
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Edition 2015-04-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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Final Datasheet
10
Rev. 2.0, 2015-04-13
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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