IDW40G65C5B_15 [INFINEON]

650V SiC Schottky Diode;


型号：	IDW40G65C5B_15
厂家：	Infineon
描述：	650V SiC Schottky Diode
文件：	总11页 (文件大小：707K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC

Silicon Carbide Diode

5^thGeneration thinQ!^TM

650V SiC Schottky Diode

IDW40G65C5B

Final Datasheet

Rev. 2.0, 2015-04-13

Power Management & Multimarket

5^thGeneration thinQ!™ SiC Schottky Diode

Description

IDW40G65C5B

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. A combination with a new, more compact design and thin-

wafer technology results is a new family of products showing improved efficiency

over all load conditions, resulting from both the improved thermal characteristics

and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

Features



Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behavior

No reverse recovery/ No forward recovery

Temperature independent switching behavior

High surge current capability

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹⁾for target applications

Breakdown voltage tested at 44 mA^{2) 3)}

Optimized for high temperature operation

Benefits



System efficiency improvement over Si diodes

System cost / size savings due to reduced cooling requirements

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

Applications



Switch mode power supply

Power factor correction

Solar inverter

Uninterruptible power supply

Table 1

Key Performance Parameters ⁴⁾

Parameter

V_DC

Value

650

Unit

Q_C; V_R=400V

E_C; V_R=400V

I_F@ T_C< 120°C

2 x 29

2 x 6.6

2 x 20

µJ

Table 2

Pin 1

Pin Definition

Pin 2

Pin 3

Type / ordering Code

Package

Marking

Related links

IDW40G65C5B

PG-TO247-3

D4065B5

www.infineon.com/sic

J-STD20 and JESD22

All devices tested under avalanche conditions for a time periode of 10ms

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Table of contents

Table of Contents

Description..........................................................................................................................................2

Maximum ratings................................................................................................................................4

Thermal characteristics.....................................................................................................................4

Electrical characteristics...................................................................................................................5

Electrical characteristics diagrams..................................................................................................6

Simplified Forward Characteristics Model ......................................................................................8

Package outlines................................................................................................................................9

Revision History...............................................................................................................................10

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Maximum ratings

Table 3

Maximum ratings

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

–

Typ.

–

Max.

Continuous forward current ¹⁾

I_F

T_C< 120°C, D=1

T_C= 25°C, t_p=10 ms

T_C= 150°C, t_p=10 ms

T_C= 25°C, t_p=10 µs

T_C= 25°C, t_p=10 ms

T_C= 150°C, t_p=10 ms

T_j= 25°C

103

Surge non-repetitive forward current, sine I_F,SM

–

halfwave ¹⁾

Non-repetitive peak forward current ¹⁾

i²t value ¹⁾

–

776

I_F,max

–

∫ i²dt

–

A²s

–

650

100

112

175

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Power dissipation ¹⁾

V_RRM

dv/dt

P_tot

–

V/ns

V_R=0..480 V

–

T_C= 25°C

Operating and storage temperature

Mounting torque

T_j;T_stg

-55

–

°C

–

Ncm

M3 screws

Thermal characteristics

Table 4

Thermal characteristics TO-247-3

Parameter

Symbol

Values

Typ.

1.0

Unit

Note/Test Condition

Min.

Max.

Thermal resistance, junction-case ¹⁾

Thermal resistance, junction-ambient ¹⁾R_thJA

R_thJC

–

1.3

K/W

°C

leaded

–

Soldering temperature, wavesoldering T_sold

only allowed at leads

1.6mm (0.063 in.) from

case for 10 s

260

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Electrical characteristics

Table 5

Static characteristics

Parameter

Symbol

Values

Typ.

–

Unit

Note/Test Condition

T_j=25°C

Min.

650

–

Max.

–

DC blocking voltage

Diode forward voltage

V_DC

V_F

1.5

1.7

2.1

210

I_F= 20 A, T_j=25°C

I_F= 20 A, T_j=150°C

V_R=650 V, T_j=25°C

V_R=600 V, T_j=25°C

V_R=650 V, T_j=150°C

–

1.8

Reverse current ¹⁾

I_R

–

1.1

–

0.3

µA

–

4.1

1450

Table 6

AC characteristics

Parameter

Symbol

Values

Typ.

Unit

Note/Test Condition

Min.

Max.

Total capacitive charge ¹⁾

Total Capacitance ¹⁾

Q_c

V_R=400 V, di/dt=200A/µs,

I_F≤I_F,MAX, T_j=150°C

–

590

–

V_R=1 V, f=1 MHz

V_R=300 V, f=1 MHz

V_R=600 V, f=1 MHz

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Electrical characteristics diagrams

Table 7

Power dissipation ¹⁾

Maximal diode forward current ¹⁾

160

120

100

0.1

0.3

0.5

0.7

140

120

100

125

150

175

100

125

150

175

T_C[°C]

P_tot=f(T_C); R_thJC,max

I_F=f(T_C); R_thJC,max;T_j≤175°C; parameter D=duty cycle

Table 8

Typical forward characteristics ¹⁾

Typical forward characteristics in surge current ¹⁾

200

180

160

140

-55°C

25°C

-55°C

120

100°C

100

25°C

100°C

150°C

175°C

150°C

175°C

V_F[V]

I_F=f(V_F); t_p=200 µs; parameter: T_j

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Electrical characteristics diagrams

Table 9

Typ. capacitance charge vs. current slope ¹⁾

Typ. Reverse current vs. reverse voltage ¹⁾

1.E-4

1.E-5

1.E-6

175°C

1.E-7

150°C

1.E-8

100°C

-55°C

25°C

400

1.E-9

100

200

300

V_R[V]

500

600

300

500

700

900

dI_F/dt [A/µs]

Q_C=f(di_F/dt); T_j=150°C; V_R=400 V; I_F≤I_F,max

I_R=f(V_R); parameter: T_j

Table 10

Max. transient thermal impedance ¹⁾

Typ. capacitance vs. reverse voltage ¹⁾

800

700

600

500

400

300

200

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

0.01

1.E-06

1.E-03

1.E+00

100

1000

t_p[s]

V_R[V]

Z_th,jc=f(t_P); parameter: D=t_P/T

C=f(V_R); T_j=25°C; f=1 MHz

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Electrical characteristics diagrams

Table 11

Typ. capacitance stored energy ¹⁾

200

400

600

V_R[V]

E_C=f(V_R)

Simplified Forward Characteristics Model

Table 12

Equivalent forward current curve ¹⁾

Mathematical Equation

V_FV_TH R_DIFF I_F

V_TH



T_j



 0.001T_j1.04

 

R_DIFF



T_j



 6.410^-7T_j 6.410^-5T_j 0.023



 

1/R_diff

V_th

V_F[V]

V_F=f(I_F)

T_jin °C; -55°C < T_j< 175°C; I_F< 40 A

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Package outlines

Figure 1

Outlines TO-247, dimensions in mm/inches

Per Leg

Per Device

Final Datasheet

Rev. 2.0, 2015-04-13

5^thGeneration thinQ!^TMSiC Schottky Diode

IDW40G65C5B

Revision History

5^thGeneration thinQ!^TMSiC Schottky Diode

Revision History: 2015-04-13, Rev. 2.0

Previous Revision:

Revision

Subjects (major changes since last version)

Release of the final datasheet.

2.0

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2015-04-13

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to

assume that the health of the user or other persons may be endangered.

Final Datasheet

Rev. 2.0, 2015-04-13

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

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