IDW75E60_09 [INFINEON]

600 V EmCon technology; 600 V EMCON技术


型号：	IDW75E60_09
厂家：	Infineon
描述：	600 V EmCon technology 600 V EMCON技术
文件：	总7页 (文件大小：179K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDW75E60

Features:

•

600 V EmCon technology

Fast recovery

Soft switching

Low reverse recovery charge

Low forward voltage

175 °C junction operating temperature

Easy paralleling

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models:

http://www.infineon.com/emcon/

PG-TO-247-3

Applications:

•

Welding

Motor drives

Type

V_RRM

I_F

V_F,Tj=25°C

T_j,max

Marking

Package

IDW75E60

600V

75A

1.65V

D75E60

PG-TO-247-3

175°C

Maximum Ratings

Parameter

Symbol

V_{RR M}

I_F

Value

Unit

Repetitive peak reverse voltage

Continuous forward current

T_C= 25°C

600

120

T_C= 90°C

T_C= 100°C

Surge non repetitive forward current

T_C= 25°C, t_p= 10 ms, sine halfwave

Maximum repetitive forward current

T_C= 25°C, t_plimited by t_j,max, D = 0.5

Power dissipation

I_FSM

I_FRM

P_tot

220

225

300

170

150

T_C= 25°C

T_C= 90°C

T_C= 100°C

Operating junction and storage temperature

T_j,T_stg

T_S

-55…+175

260

°C

Soldering temperature

1.6mm (0.063 in.) from case for 10 s

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

Thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJA

0.5

K/W

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_RRM

I_R=0.25mA

600

Diode forward voltage

V_F

I_F=75A

1.65

2.0

T_j=25°C

T_j=175°C

V_R=600V

T_j=25°C

T_j=175°C

Reverse leakage current

I_R

µA

1000

Dynamic Electrical Characteristics

Diode reverse recovery time

Diode reverse recovery charge

t_rr

Q_rr

121

2.4

38.5

921

µC

T_j=25°C

V_R=400V, I_F=75A,

dI_F/dt=1460A/µs

Diode peak reverse recovery current I_rr

Diode peak rate of fall of reverse

dI_rr/dt

A/µs

recovery current during t_b

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current I_rr

t_rr

Q_rrm

155

4.4

46.6

960

µC

T_j=125°C

V_R=400V, I_F=75A,

dI_F/dt=1460A/µs

Diode peak rate of fall of reverse

dI_rr/dt

A/µs

recovery current during t_b

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current I_rr

t_rr

Q_rrm

182

5.8

56.2

1013

µC

T_j=175°C

V_R=400V, I_F=75A,

dI_F/dt=1460A/µs

Diode peak rate of fall of reverse

dI_rr/dt

A/µs

recovery current during t_b

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

300W

250W

200W

150W

100W

50W

120A

90A

60A

30A

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 1. Power dissipation as a function of

case temperature

Figure 2. Diode forward current as a

function of case temperature

(T_j≤ 175°C)

200A

I_F=150A

T_J=25°C

2.0V

1.5V

1.0V

0.5V

0.0V

175°C

150A

75A

37.5A

100A

50A

0°C

50°C

100°C

150°C

V_F, FORWARD VOLTAGE

Figure 3. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 4. Typical diode forward voltage as a

function of junction temperature

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

5µC

4µC

3µC

2µC

1µC

0µC

200ns

150ns

100ns

50ns

T_J=175°C

T_J=25°C

0ns

1000A/µs

1500A/µs

1000A/µs

1500A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 5. Typical reverse recovery time as

a function of diode current slope

(V_R=400V, I_F=75A,

Figure 6. Typical reverse recovery charge

as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R= 400V, I_F= 75A,

Dynamic test circuit in Figure E)

T_J=175°C

-1200A/µs

-1000A/µs

-800A/µs

-600A/µs

-400A/µs

-200A/µs

0A/µs

T_J=175°C

60A

T_J=25°C

50A

40A

T_J=25°C

30A

20A

10A

1000A/µs

1500A/µs

1000A/µs

1500A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 7. Typical reverse recovery current

as a function of diode current

slope

Figure 8. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=400V, I_F=75A,

(V_R= 400V, I_F= 75A,

Dynamic test circuit in Figure E)

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

D=0.5

0.2

10^-1K/W

10^-2K/W

0.1

R , ( K / W )

0.0556

τ , ( s )

0.1495

0.02797

3.623 E-3

3.276 E-4

2.635 E-5

R₂

0.05

0.1757

0.12374

0.12192

0.02305

0.02

0.01

R₁

C₁=τ /R₁C₂=τ /R₂

single pulse

1µs

10µs 100µs 1ms 10ms 100ms

t_P, PULSE WIDTH

Figure 9. Diode transient thermal

impedance as a function of pulse

width

(D=t_P/T)

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

Rev. 2.1 Nov 09

Power Semiconductors

IDW75E60

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies

components may be used in life-support devices or systems only with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

Rev. 2.1 Nov 09

Power Semiconductors

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IDW75E60_09 [INFINEON]

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