IDY10S120XKSA1 [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN;


型号：	IDY10S120XKSA1
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN 局域网功效二极管
文件：	总10页 (文件大小：1132K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC

Silicon Carbide Diode

2nd Generation thinQ!™

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Data Sheet

Rev. 2.1, 2011-05-25

Final

Industrial & Multimarket

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Description

The second generation of Infineon SiC Schottky diodes has emerged over the years as the

industry standard. The IDYxxS120 products are extending the already broad portfolio with

the new TO-247HC (high creepage) package.

The new package layout is fully compatible with the industry standard TO247, and can

therefore easily be placed in already existing designs, with no extra efforts.

The higher creepage distance increases the safety margin against the risk of short circuits,

especially arcing, which might be triggered by the presence of dust or dirt inside the system.

This reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths

or foils) solutions to lower the pollution level between the leads, with all consequent benefits

of a lean and faster manufacturing process

Features

•

Revolutionary semiconductor material - Silicon Carbide

Switching behavior benchmark

No reverse recovery/ No forward recovery

Temperature independent switching behavior

High surge current capability

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹⁾for target applications

Optimized for high temperature operation

Benefits

•

System efficiency improvement over Si diodes

System cost / size savings due to reduced cooling requirements

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures and less fans

Package design with high creepage distance

Reduced EMI

Applications

•

Solar applications; UPS; Motor Drives;

SMPS e.g.; CCM PFC

Table 1

Parameter

V_DC

Key Performance Parameters

Value

1200

Unit

Q_C

I_F@ T_C< 150°C 10

Table 2

Pin 1

Pin Definition

Pin2

Pin 3

Type / Ordering Code

Package

Marking

Related Links

IFX SiC Diodes Webpage

IDY10S120

PG-TO247HC-3

D10S120

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Maximum ratings

Table 3

Maximum ratings

Parameter

Symbol

Values

(leg/device)

Unit Note / Test Condition

Min. Typ. Max.

Continuous forward current

Surge non-repetitive

I_F

5/10

T_C= < 150°C

I_{F, SM}

29/58

25/48

125/250

4/16

T_C= 25°C, t_p= 10 ms

T_C= 150°C, t_p= 10 ms

T_C= 25°C, t_p= 10 µs

T_C= 25°C, t_p= 10 ms

T_C= 150°C, t_p= 10 ms

T_j= 25°C

forward current, sine halfwave

Non-repetitive peak forward current I_{F, max}

i² t value

∫i²dt

A²s

3/12

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Power dissipation

V_RRM

dv/dt

P_tot

1200

V/ns V_R= 0...960 V

75/150

150

T_C= 25 °C

Operating and storage temperature T_j,T_stg

-55

°C

Mounting torque

0.6

Ncm M3 screws

Maximum of mounting

processes:3

Thermal characteristics

Table 4

Thermal characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

(leg/device)

Min.

Typ.

Max.

2/1

Thermal resistance, junction - case R_thJC

K/W

°C

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

1.6 mm (0.063 in.)

from case for 10 s

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Electrical characteristics

Electrical characteristics, at T_j=25 °C, unless otherwise specified.

Table 5

Static characteristics

Parameter

Symbol

Values

Unit Note / Test Condition

(leg/device)

Min.

Typ.

Max.

DC blocking voltage

Diode forward voltage

V_DC

V_F

1200

T_j= 25 °C, I_R= 0.1 mA

I_F= 10 A, T_j= 25 °C

I_F= 10 A, T_j= 150 °C

I_R= 1200 V, T_j=25 °C

I_R= 1200 V, T_j=150 °C

1.65

2.55

5/10

20/40

1.8

Reverse current

I_R

120/240

µA

500/1000

Table 6

AC characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

(leg/device)

Min.

Typ.

18/36

Max.

Total capacitive charge

Switching time¹⁾

Q_c

t_c

V_R= 400 V, F ≤I F_max

di_F/dt =200 A/μs,

T_j=150 °C

<10

250/500

20/40

V_R= 1 V, f= 1 MHz

V_R= 300 V, f= 1 MHz

V_R= 600 V, f= 1 MHz

18/36

1) t

is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from

t^rrwhich is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Electrical characteristics diagrams

Electrical characteristics, at T_j=25 °C, unless otherwise specified.

Table 7

Power dissipation (per leg)

Typ. forward characteristic (per leg)

P_tot= f(T_C); parameter: R_thJC(max)

;

I_F=f(V_F); t_p=400 µs; parameter: T_j; I_F=f(T_C);

per device the values double

Table 8

Diode forward current (per leg)

Diode forward current (per device)

T_j≤ 175 °C; parameter: R_thJC(max); V_F(max); D=t_P/T

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Electrical characteristics diagrams

Table 9

Typ. capacitance charge vs. current slope¹⁾

(per leg)

Typ. reverse current vs. reverse voltage (per leg)

Q_D=f(diF/dt)4); T_j= 150 °C; I_F≤ I_{F max}

;

I_R=f(V_R); parameter: T_j; per device the values double

per device the values double

1) Only capacitive charge occuring, guaranteed by design

Table 10

Typ. transient thermal impedance (per leg)

Typ. transient thermal impedance (per device)

Z_thjc=f(t_P) ; parameter: D = t_P/T

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Electrical characteristics diagrams

Table 11

Typ. C stored energy (per leg)

Typ. capacitance vs. reverse voltage (per leg)

E_C=f(V_R); per device the values double

C=f(V_R); T_C=25 °C, f=1 MHz;

per device the values double

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Package outlines

Figure 1

Dimensions in mm/inches

Final Data Sheet

Rev. 2.1, 2011-05-25

2nd Generation thinQ!™ SiC Schottky Diode

IDY10S120

Revision History

2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode

Revision History: 2011-05-25, Rev. 2.1

Previous Revision:

Revision Subjects (major changes since last revision)

2.0

2.1

Release of final data sheet

Update of Total capacitive charge

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2011-05-25

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written approval

of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that

life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that

device or system. Life support devices or systems are intended to be implanted in the human body or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the

user or other persons may be endangered.

Final Data Sheet

Rev. 2.1, 2011-05-25

IDY10S120XKSA1 [INFINEON]

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