BUP400 [INFINEON]
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）
| 型号： | BUP400 |
| 厂家： | 
Infineon |
| 描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
| 文件： | 总8页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 400
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
Package
Ordering Code
C
BUP 400
600V 22A
TO-220 AB
C67078-A4403-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
600
V
CE
CGR
Ω
R
GE
= 20 k
600
Gate-emitter voltage
DC collector current
V
± 20
GE
I
A
C
T = 25 °C
22
14
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
44
28
C
T = 90 °C
C
Avalanche energy, single pulse
E
AS
P
tot
mJ
W
Ω
I = 10 A, V = 50 V, R = 25
C
CC
GE
L = 350 µH, T = 25 °C
18
j
Power dissipation
T = 25 °C
C
100
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Semiconductor Group
1
Jul-31-1996
BUP 400
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
R
thJC
1.25
K/W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
GE
= V
I = 0.35 mA
CE, C
4.5
5.5
6.5
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
V
GE
= 15 V, I = 10 A, T = 25 °C
-
-
-
-
2.1
2.2
3
2.7
2.8
C
j
= 15 V, I = 10 A, T = 125 °C
C
j
= 15 V, I = 20 A, T = 25 °C
-
C
j
= 15 V, I = 20 A, T = 125 °C
3.3
-
C
j
Zero gate voltage collector current
= 600 V, V = 0 V, T = 25 °C
I
I
µA
nA
CES
GES
V
CE
-
-
-
-
40
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
GE
100
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 10 A
2
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
CE
570
80
50
760
120
75
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
-
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
-
GE
Semiconductor Group
2
Jul-31-1996
BUP 400
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 300 V, V = 15 V, I = 10 A
t
t
t
t
ns
d(on)
V
CC
GE
C
Ω
R
Gon
= 100
-
-
-
-
45
70
Rise time
= 300 V, V = 15 V, I = 10 A
r
V
CC
GE
C
R
Gon
= 100 Ω
60
90
Turn-off delay time
= 300 V, V = -15 V, I = 10 A
d(off)
V
CC
GE
C
R
Goff
= 100 Ω
250
500
340
680
Fall time
= 300 V, V = -15 V, I = 10 A
f
V
CC
GE
C
R
Goff
= 100 Ω
Semiconductor Group
3
Jul-31-1996
BUP 400
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
26
A
110
W
22
90
Ptot
IC
20
80
70
60
50
40
30
20
18
16
14
12
10
8
6
4
10
0
2
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 1
10 2
t
= 5.1µs
10 µs
p
K/W
A
IC
ZthJC
10 0
10 1
10 -1
100 µs
D = 0.50
0.20
10 0
0.10
single pulse
10 -2
1 ms
0.05
0.02
0.01
10 ms
DC
10 -1
10 -3
10 0
10 1
10 2
V 10 3
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-31-1996
BUP 400
Typ. output characteristics
I = f (V
Typ. output characteristics
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p
j
p
j
20
A
20
A
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
16
14
12
10
8
16
14
12
10
8
IC
IC
7V
7V
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
20
A
16
14
12
10
8
IC
6
4
2
0
0
2
4
6
8
10
V
14
VGE
Semiconductor Group
5
Jul-31-1996
BUP 400
Typ. switching time
Typ. switching time
t = f (R ) , inductive load , Tj = 125°C
I = f (I ) , inductive load , T = 125°C
G
C
j
par.: V = 300 V, V = ± 15 V, I = 10 A
par.: V = 300 V, V = ± 15 V, R = 100
Ω
CE
10 3
GE
C
CE
10 3
GE
G
tdoff
tf
tf
t
t
ns
ns
tdoff
tr
tr
10 2
10 2
tdon
tdon
10 1
10 1
0
50
100 150 200 250 300
400
Ω
0
5
10
15
A
25
RG
IC
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 300 V, V = ± 15 V, R = 100 Ω
CE
GE
G
par.: V = 300V, V = ± 15 V, I = 10 A
CE
GE
C
2.0
2.0
mWs
1.6
1.4
1.2
1.0
0.8
0.6
0.4
mWs
1.6
1.4
1.2
1.0
0.8
0.6
0.4
E
E
Eoff
Eon
Eoff
Eon
0.2
0.0
0.2
0.0
0
5
10
15
A
25
0
50
100 150 200 250 300
400
Ω
IC
RG
Semiconductor Group
6
Jul-31-1996
BUP 400
Typ. capacitances
C = f (V
Typ. gate charge
)
ƒ
V
= (Q
)
CE
GE
Gate
parameter: V = 0 V, f = 1 MHz
parameter: I
= 10 A
GE
C puls
10 1
20
V
nF
16
VGE
C
100 V
300 V
14
12
10
8
10 0
10 -1
10 -2
Ciss
6
Coss
Crss
4
2
0
0
10
20
30
40
nC
QGate
55
0
5
10
15
20
25
30
V
40
VCE
Short circuit safe operating area
= f (V ) , T = 150°C
Reverse biased safe operating area
I = f (V ) , T = 150°C
Cpuls
I
Csc
CE
j
CE
j
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
1.0
4
2
0
0.5
0.0
0
100 200 300 400 500 600
V
VCE
800
0
100 200 300 400 500 600
V
VCE
800
Semiconductor Group
7
Jul-31-1996
BUP 400
Package Outlines
Dimensions in mm
Weight:
Semiconductor Group
8
Jul-31-1996
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