BUP402 [INFINEON]
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT (低正向压降高开关速度低尾电流闭锁免费额定雪崩)型号: | BUP402 |
厂家: | Infineon |
描述: | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
文件: | 总7页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUP 402
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
I
Package
Ordering Code
CE
C
BUP 402
600V 36A
TO-220 AB
C67078-A4405-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Emitter-collector voltage
Collector-gate voltage
V
V
V
600
V
CE
EC
CGR
R
= 20 kΩ
600
GE
Gate-emitter voltage
DC collector current
V
± 20
GE
I
I
A
C
T = 25 °C
36
22
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
p
Cpuls
T = 25 °C
72
40
C
T = 90 °C
C
Avalanche energy, single pulse
E
mJ
W
AS
tot
I = 20 A, V = 50 V, R = 25 Ω
C
CC
GE
L = 200 µH, T = 25 °C
42
j
Power dissipation
P
T = 25 °C
150
C
Chip or operating temperature
Storage temperature
T
T
- 55 ... + 150 °C
- 55 ... + 150
j
stg
Semiconductor Group
1
Dec-02-1996
BUP 402
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
≤ 0.83
K/W
thJC
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 0.5 mA, T = 25 °C
4.5
5.5
6.5
GE
CE, C
j
Collector-emitter saturation voltage
CE(sat)
V
V
V
V
= 15 V, I = 20 A, T = 25 °C
-
-
-
-
2.1
2.2
3
2.7
GE
GE
GE
GE
C
j
= 15 V, I = 20 A, T = 125 °C
2.8
C
j
= 15 V, I = 40 A, T = 25 °C
-
-
C
j
= 15 V, I = 40 A, T = 125 °C
3.3
C
j
Zero gate voltage collector current
= 600 V, V = 0 V, T = 25 °C
I
I
µA
nA
CES
GES
V
-
-
-
-
100
100
CE
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 20 A
4
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
1040
115
66
1400
175
110
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
-
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
-
CE
GE
Semiconductor Group
2
Dec-02-1996
BUP 402
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 300 V, V = 15 V, I = 20 A
t
t
t
t
ns
d(on)
V
CC
GE
C
R
= 47 Ω
-
-
-
-
40
60
Gon
Rise time
= 300 V, V = 15 V, I = 20 A
r
V
CC
GE
C
Ω
R
= 47
70
110
330
680
Gon
Turn-off delay time
= 300 V, V = -15 V, I = 20 A
d(off)
V
CC
GE
C
Ω
R
= 47
250
500
Goff
Fall time
= 300 V, V = -15 V, I = 20 A
f
V
CC
GE
C
Ω
= 47
R
Goff
Semiconductor Group
3
Dec-02-1996
BUP 402
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
160
W
36
A
Ptot
120
IC
28
24
20
16
12
8
100
80
60
40
20
0
4
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 2
10 0
t
= 17.0µs
p
A
K/W
IC
ZthJC
100 µs
10 1
10 -1
D = 0.50
0.20
1 ms
10 0
10 -2
0.10
0.05
10 ms
0.02
single pulse
0.01
DC
10 -1
10 -3
10 0
10 1
10 2
V 10 3
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Dec-02-1996
BUP 402
Typ. output characteristics
I = f (V
Typ. output characteristics
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p
j
p
j
40
A
40
A
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
IC
IC
30
25
20
15
10
30
25
20
15
10
7V
7V
5
0
5
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
40
A
IC
30
25
20
15
10
5
0
0
2
4
6
8
10
V
VGE
14
Semiconductor Group
5
Dec-02-1996
BUP 402
Typ. switching time
Typ. switching time
t = f (R ) , inductive load , Tj = 125°C
I = f (I ) , inductive load , T = 125°C
G
C
j
par.: V = 300 V, V = ± 15 V, I = 20 A
par.: V = 300 V, V = ± 15 V, R = 47
Ω
CE
10 3
GE
C
CE
10 3
GE
G
tf
tf
t
t
ns
ns
tdoff
tdoff
tr
tr
10 2
10 2
tdon
tdon
10 1
10 1
0
20
40
60
80
120
Ω
0
5
10 15 20 25 30 35 40
A
IC
50
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 300 V, V = ± 15 V, R = 47 Ω
CE
GE
G
par.: V = 300V, V = ± 15 V, I = 20 A
CE
GE
C
3.0
3.0
Eoff
mWs
2.0
mWs
2.0
E
E
Eon
Eoff
Eon
1.5
1.5
1.0
1.0
0.5
0.0
0.5
0.0
0
5
10 15 20 25 30 35 40
A
IC
50
0
20
40
60
80
120
Ω
RG
Semiconductor Group
6
Dec-02-1996
BUP 402
Typ. capacitances
C = f (V
Typ. gate charge
ƒ
)
V
= (Q
)
CE
GE
Gate
parameter: I
= 20 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
10 1
20
V
nF
16
C
VGE
100 V
300 V
14
12
10
8
Ciss
10 0
10 -1
10 -2
Coss
Crss
6
4
2
0
0
10 20 30 40 50 60 70 nC 90
QGate
0
5
10
15
20
25
30
V
40
VCE
Short circuit safe operating area
= f (V ) , T = 150°C
Reverse biased safe operating area
I = f (V ) , T = 150°C
Cpuls
I
Csc
CE
j
CE
j
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
1.0
4
2
0
0.5
0.0
0
100 200 300 400 500 600
V
VCE
800
0
100 200 300 400 500 600
V
VCE
800
Semiconductor Group
7
Dec-02-1996
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