BUP403 [INFINEON]
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）
| 型号： | BUP403 |
| 厂家： | 
Infineon |
| 描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 403
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
Package
Ordering Code
C
BUP 403
600V 42A
TO-220 AB
C67078-A4406-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
600
V
CE
V
CGR
Ω
R
GE
= 20 k
600
Gate-emitter voltage
DC collector current, (limited by bond wire)
T = 60 °C
V
± 20
GE
I
A
C
42
32
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
104
64
C
T = 90 °C
C
Avalanche energy, single pulse
E
AS
P
tot
mJ
W
Ω
I = 25 A, V = 50 V, R = 25
C
CC
GE
L = 200 µH, T = 25 °C
65
j
Power dissipation
T = 25 °C
C
200
Chip or operating temperature
Storage temperature
T
T
- 55 ... + 150 °C
- 55 ... + 150
j
stg
Semiconductor Group
1
Jul-31-1996
BUP 403
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
R
thJC
0.63
K/W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
GE
= V
I = 0.7 mA
CE, C
4.5
5.5
6.5
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
V
GE
= 15 V, I = 30 A, T = 25 °C
-
-
-
-
2.1
2.2
3
2.7
2.8
C
j
= 15 V, I = 30 A, T = 125 °C
C
j
= 15 V, I = 60 A, T = 25 °C
-
C
j
= 15 V, I = 60 A, T = 125 °C
3.3
-
C
j
Zero gate voltage collector current
= 600 V, V = 0 V, T = 25 °C
I
I
µA
nA
CES
GES
V
CE
-
-
-
-
150
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
GE
100
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 30 A
6
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
CE
1600
170
100
2150
260
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
-
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
-
150
GE
Semiconductor Group
2
Jul-31-1996
BUP 403
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 300 V, V = 15 V, I = 30 A
t
t
t
t
ns
d(on)
V
CC
GE
C
Ω
R
Gon
= 33
-
-
-
-
50
75
Rise time
= 300 V, V = 15 V, I = 30 A
r
V
CC
GE
C
R
Gon
= 33 Ω
80
120
340
700
Turn-off delay time
= 300 V, V = -15 V, I = 30 A
d(off)
V
CC
GE
C
R
Goff
= 33 Ω
250
500
Fall time
= 300 V, V = -15 V, I = 30 A
f
V
CC
GE
C
R
Goff
= 33 Ω
Semiconductor Group
3
Jul-31-1996
BUP 403
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
220
W
55
A
180
Ptot
45
IC
160
140
120
100
80
40
35
30
25
20
15
10
60
40
20
0
5
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 3
10 0
A
K/W
t
= 12.0µs
p
IC
ZthJC
10 2
10 1
10 0
10 -1
10 -1
100 µs
D = 0.50
0.20
1 ms
10 -2
0.10
0.05
10 ms
0.02
single pulse
0.01
DC
10 -3
10 0
10 1
10 2
V 10 3
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-31-1996
BUP 403
Typ. output characteristics
I = f (V
Typ. output characteristics
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p
j
p
j
60
A
60
A
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
IC
IC
7V
7V
5
0
5
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
60
A
50
45
40
35
30
25
20
15
10
IC
5
0
0
2
4
6
8
10
V
14
VGE
Semiconductor Group
5
Jul-31-1996
BUP 403
Typ. switching time
Typ. switching time
t = f (R ) , inductive load , Tj = 125°C
I = f (I ) , inductive load , T = 125°C
G
C
j
par.: V = 300 V, V = ± 15 V, I = 30 A
par.: V = 300 V, V = ± 15 V, R = 33
Ω
CE
10 3
GE
C
CE
10 3
GE
G
tf
tdoff
tf
t
t
ns
ns
tdoff
tr
tr
10 2
tdon
10 2
tdon
10 1
10 1
0
20
40
60
80
120
Ω
0
10
20
30
40
50
60
A
IC
80
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 300 V, V = ± 15 V, R = 33 Ω
CE
GE
G
par.: V = 300V, V = ± 15 V, I = 30 A
CE
GE
C
10
5.0
mWs
mWs
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8
7
6
5
4
3
2
E
E
Eoff
Eon
Eoff
Eon
1
0
0.5
0.0
0
10
20
30
40
50
60
A
IC
80
0
20
40
60
80
120
Ω
RG
Semiconductor Group
6
Jul-31-1996
BUP 403
Typ. capacitances
C = f (V
Typ. gate charge
)
ƒ
V
= (Q
)
CE
GE
Gate
parameter: V = 0 V, f = 1 MHz
parameter: I
= 30 A
GE
C puls
10 1
20
V
nF
16
VGE
C
Ciss
100 V
300 V
14
12
10
8
10 0
10 -1
10 -2
Coss
Crss
6
4
2
0
0
20
40
60
80
100 nC 130
QGate
0
5
10
15
20
25
30
V
VCE
40
Short circuit safe operating area
= f (V ) , T = 150°C
Reverse biased safe operating area
I = f (V ) , T = 150°C
Cpuls
I
Csc
CE
j
CE
j
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
1.0
4
2
0
0.5
0.0
0
100 200 300 400 500 600
V
VCE
800
0
100 200 300 400 500 600
V
VCE
800
Semiconductor Group
7
Jul-31-1996
BUP 403
Package Outlines
Dimensions in mm
Weight:
Semiconductor Group
8
Jul-31-1996
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