BUP41 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUP41 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUP41
DESCRIPTION
·High Collector Current-IC= 6A
·Low Collector Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A
·High Switching Speed
·Complement to Type BUP40
APPLICATIONS
·For audio amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
60
50
V
6
6
V
Collector Current-Continuous
A
Collector Power Dissipation
@ TC=25℃
PC
10
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUP41
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP.
MAX UNIT
IC= 3A; IB= 0.1A
0.4
1.4
1.0
1.0
500
V
VCE(
)
sat
IC= 3A; IB= 0.1A
VCB= 40V; IE= 0
VEB= 4V; IC= 0
IC= 1A; VCE= 2V
IC= 3A; VCE= 2V
IC= 1A; VCE= 5V
IE= 0VCB= 10V
V
VBE(
)
sat
ICBO
μA
μA
IEBO
hFE-1
hFE-2
fT
DC Current Gain
100
40
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
120
25
MHz
pF
COB
2
isc Website：www.iscsemi.cn
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