BUP400D [INFINEON]
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode); IGBT用反并联二极管（低正向压降高开关速度低尾电流闭锁免费包括快速续流二极管）
| 型号： | BUP400D |
| 厂家： | 
Infineon |
| 描述： | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
| 文件： | 总9页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 400D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
I
Package
Ordering Code
CE
C
BUP 400D
600V 22A
TO-220 AB
Q67040-A4423-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
600
V
CE
CGR
Ω
R
GE
= 20 k
600
Gate-emitter voltage
DC collector current
V
± 20
GE
I
A
C
T = 25 °C
22
14
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
44
28
C
T = 90 °C
C
Diode forward current
I
I
F
T = 90 °C
11
72
C
Pulsed diode current, t = 1 ms
p
Fpuls
T = 25 °C
C
Power dissipation
P
W
tot
T = 25 °C
100
C
Chip or operating temperature
Storage temperature
T
-55 ... + 150 °C
-55 ... + 150
j
T
stg
Semiconductor Group
1
Jul-31-1996
BUP 400D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
E
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
R
R
≤ 1.25
K/W
thJC
≤
2.5
thJCD
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 0.35 mA
CE, C
4.5
5.5
6.5
GE
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
V
GE
= 15 V, I = 10 A, T = 25 °C
-
-
-
-
2.1
2.2
3
2.7
2.8
C
j
= 15 V, I = 10 A, T = 125 °C
C
j
= 15 V, I = 20 A, T = 25 °C
-
C
j
= 15 V, I = 20 A, T = 125 °C
3.3
-
C
j
Zero gate voltage collector current
= 600 V, V = 0 V, T = 25 °C
I
I
µA
nA
CES
GES
V
-
-
-
-
160
CE
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
100
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 10 A
2
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
570
80
50
760
120
75
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
-
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
-
GE
Semiconductor Group
2
Jul-31-1996
BUP 400D
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
t
t
t
t
ns
d(on)
V
= 300 V, V
= 15 V, I = 10 A
C
CC
GE
Ω
R
= 100
-
-
-
-
45
70
Gon
Rise time
= 300 V, V
r
V
= 15 V, I = 10 A
C
CC
GE
Ω
R
= 100
60
90
Gon
Turn-off delay time
d(off)
V
CC
= 300 V, V
= -15 V, I = 10 A
C
GE
Ω
R
= 100
250
500
340
680
Goff
Fall time
= 300 V, V
f
V
= -15 V, I = 10 A
C
CC
GE
R
= 100 Ω
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 10 A, V
= 0 V, T = 25 °C
-
-
1.65
-
-
-
F
GE
GE
j
I = 10 A, V
= 0 V, T = 125 °C
j
F
Reverse recovery time
I = 10 A, V = -300 V, V = 0 V
t
ns
rr
F
R
GE
di /dt = -100 A/µs
F
T = 25 °C
-
-
60
100
150
j
T = 125 °C
j
100
Reverse recovery charge
Q
µC
rr
I = 10 A, V = -300 V, V = 0 V
F
R
GE
di /dt = -100 A/µs
F
T = 25 °C
-
-
0.2
0.4
0.37
0.74
j
T = 125 °C
j
Semiconductor Group
3
Jul-31-1996
BUP 400D
Power dissipation
Collector current
ƒ
ƒ
T
C = (
P
T
I
tot = (
)
)
C
C
≤
≥
≤
T
150 °C
j
T
V
parameter:
150 °C
parameter:
15 V ,
j
GE
110
W
22
A
90
18
Ptot
IC
80
70
60
50
40
30
20
10
16
14
12
10
8
6
4
2
0
0
0
0
20
40
60
80 100 120 °C 160
TC
20
40
60
80 100 120 °C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
t
I
V
Z
th JC = ( p)
C = (
)
CE
≤
D
, T
T
D = t
T
/
p
parameter: = 0 C = 25°C ,
150 °C
parameter:
j
10 1
10 2
t
= 5.1µs
10 µs
p
K/W
A
IC
ZthJC
10 0
10 1
10 0
10 -1
10 -1
100 µs
D = 0.50
0.20
0.10
single pulse
1 ms
0.05
10 -2
0.02
0.01
10 ms
DC
10 -3
10 -5
10 0
10 1
10 2
V 10 3
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-31-1996
BUP 400D
Typ. output characteristics
IC = f (VCE
Typ. output characteristics
IC = f (VCE
)
)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
20
20
A
A
17V
15V
13V
17V
15V
13V
16
IC
16
IC
11V
9V
7V
11V
9V
7V
14
12
10
8
14
12
10
8
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE
)
parameter: tp = 80 µs, VCE = 20 V
20
A
16
IC
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
14
VGE
Semiconductor Group
5
Jul-31-1996
BUP 400D
Typ. switching time
t = f (R ) , inductive load , j = 125°C
Typ. switching time
T
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
G
par.: VCE = 300 V, VGE = ± 15 V, IC = 10 A
10 3
10 3
tdoff
tf
tf
t
t
ns
ns
tdoff
tr
10 2
tr
10 2
tdon
tdon
10 1
10 1
0
50 100 150 200 250 300
400
0
5
10
15
A
25
Ω
RG
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
Typ. switching losses
(R ) , inductive load , T = 125°C
E = f
G
j
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
par.: VCE = 300V, VGE = ± 15 V, IC = 10 A
2.0
2.0
mWs
mWs
1.6
E
1.6
E
1.4
1.4
1.2
Eoff
Eon
1.2
1.0
0.8
0.6
0.4
1.0
Eoff
0.8
Eon
0.6
0.4
0.2
0.0
0.2
0.0
0
5
10
15
A
25
0
50 100 150 200 250 300
400
Ω
IC
RG
Semiconductor Group
6
Jul-31-1996
BUP 400D
Typ. capacitances
f V
Typ. gate charge
C
= (
)
ƒ
V
Q
Gate
GE = (
)
CE
V
parameter: GE = 0 V, f = 1 MHz
I
parameter: C puls = 10 A
10 1
20
V
nF
16
VGE
C
100 V
300 V
14
12
10
8
10 0
10 -1
10 -2
Ciss
6
Coss
Crss
4
2
0
0
10
20
30
40
nC
QGate
55
0
5
10
15
20
25
30
V
VCE
40
Short circuit safe operating area
f V
Reverse biased safe operating area
I
T
I
f T
Cpuls = (VCE) , j = 150°C
Csc = ( CE) , j = 150°C
V
t
V
parameter: GE = ± 15 V,
10 µs, L < 50 nH
parameter: GE = 15 V
≤
sc
10
2.5
ICsc
I
ICpuls I
/
C
/
C(90°C)
6
1.5
1.0
4
2
0
0.5
0.0
0
100 200 300 400 500 600
V
VCE
800
0
100 200 300 400 500 600
V
VCE
800
Semiconductor Group
7
Jul-31-1996
BUP 400D
Typ. forward characteristics
IF = f (VF)
Transient thermal impedance Diode
ƒ
Zth JC = (tp)
parameter: Tj
parameter: D = tp / T
10 1
16
A
K/W
ZthJC
IF
12
10 0
10
Tj=25°C
Tj=125°C
8
6
4
D = 0.50
0.20
10 -1
0.10
0.05
0.02
single pulse
0.01
2
0
10 -2
10 -5
0.0
0.5
1.0
1.5
2.0
V
3.0
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VF
Semiconductor Group
8
Jul-31-1996
BUP 400D
Package Outlines
Dimensions in mm
Weight:
Semiconductor Group
9
Jul-31-1996
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