BSZ0904NSIATMA1 [INFINEON]
Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8;
| 型号： | BSZ0904NSIATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：618K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ0904NSI
OptiMOSTM Power-MOSFET
Product Summary
Features
VDS
30
4.0
40
12
17
V
• Optimized SyncFET for high performance buck converter
• Integrated monolithic Schottky-like diode
• Very low on-resistance R DS(on) @ V GS=4.5 V
• 100% avalanche tested
RDS(on),max
ID
mW
A
QOSS
nC
nC
QG(0V..10V)
• Superior thermal resistance
PG-TSDSON-8 (fused leads)
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Marking
Package
BSZ0904NSI
PG-TSDSON-8 (fused leads)
0904NSI
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
Continuous drain current
40
40
40
A
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
40
18
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
Pulsed drain current3)
I D,pulse
I AS
T C=25 °C
160
20
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=20 A, R GS=25 W
20
mJ
V
±20
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2013-05-13
BSZ0904NSI
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
37
W
T A=25 °C,
R thJA=60 K/W2)
2.1
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
3.4
20
60
K/W
top
6 cm2 cooling area2)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=10 mA
Drain-source breakdown voltage
30
-
-
-
-
V
dV (BR)DSS
/dT j
I D=10 mA, referenced
to 25 °C
Breakdown voltage temperature
coefficient
15
mV/K
V GS(th) V DS=V GS, I D=250 µA
Gate threshold voltage
1.2
-
-
-
2
V
I DSS
V DS=24 V, V GS=0 V
Zero gate voltage drain current
0.5
mA
V DS=24 V, V GS=0 V,
T j=125 °C
-
1
-
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
10
4.6
3.3
0.9
100 nA
R DS(on) V GS=4.5 V, I D=30 A
V GS=10 V, I D=30 A
R G
Drain-source on-state resistance
5.7
4.0
1.8
mW
-
Gate resistance
0.5
W
|V DS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
41
82
-
S
3) See figure 3 for more detailed information
Rev. 2.2
page 2
2013-05-13
BSZ0904NSI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
1100
460
64
1463 pF
V GS=0 V, V DS=15 V,
f =1 MHz
C oss
Crss
t d(on)
t r
612
-
3.3
4.4
16
-
-
-
-
ns
V DD=15 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
3.0
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
2.9
1.7
2.9
4.1
8.5
2.7
3.9
-
nC
Q g(th)
Q gd
3.8
-
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Q sw
Q g
Gate charge total
11
-
V plateau
Gate plateau voltage
V
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g
Gate charge total
-
17
23
nC
V DS=0.1 V,
V GS=0 to 4.5 V
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
6.8
12
-
Q oss
V DD=15 V, V GS=0 V
16
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
37
A
T C=25 °C
I S,pulse
160
V GS=0 V, I F=3 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.56
2
0.7
-
V
V R=15 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-05-13
BSZ0904NSI
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
40
30
20
10
40
30
20
10
0
0
0
40
80
120
160
0
40
80
120
160
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
102
101
100
10-1
0.5
10 µs
100
0.2
100 µs
0.1
1 ms
0.05
10 ms
DC
0.02
10-1
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.2
page 4
2013-05-13
BSZ0904NSI
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
10
5 V
10 V
140
4.5 V
8
120
100
80
60
40
20
0
3.2 V
6
3.5 V
4 V
3.2 V
4.5 V
5 V
4
7 V
8 V
10 V
3 V
2.8 V
2
0
0
1
2
3
0
10
20
30
40
50
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
120
100
80
200
160
120
80
60
40
40
150 °C
20
25 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.2
page 5
2013-05-13
BSZ0904NSI
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=10 mA
6
5
2.5
2
4
1.5
1
typ
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
102
101
100
Ciss
103
102
101
25 °C
125 °C
Coss
150 °C
-55 °C
Crss
10-1
0
0
10
20
30
0.2
0.4
0.6
0.8
1
1.2
VDS [V]
VSD [V]
Rev. 2.2
page 6
2013-05-13
BSZ0904NSI
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
15 V
6 V
24 V
25 °C
10
100 °C
125 °C
6
1
4
2
0.1
0
1
10
100
1000
0
5
10
15
20
tAV [µs]
Qgate [nC]
15 Typ. drain-source leakage current
I DSS=f(V DS ); V GS=0 V
16 Gate charge waveforms
parameter: T j
10-2
V GS
Qg
10-3
125 °C
10-4
100 °C
75 °C
V gs(th)
10-5
10-6
25 °C
Qg(th)
Qsw
Qgd
Qgate
10-7-7
10
Qgs
0
5
10
15
20
25
VDS [V]
Rev. 2.2
page 7
2013-05-13
BSZ0904NSI
Package Outline
PG-TSDSON-8 (fused leads)
PG-TSDSON-8 (fused leads): Outline
Rev. 2.2
page 8
2013-05-13
BSZ0904NSI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2013-05-13
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