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BSZ0909NDXTMA1 [INFINEON]

Power Field-Effect Transistor, 4.1A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WISON-8;
BSZ0909NDXTMA1
型号： BSZ0909NDXTMA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 4.1A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WISON-8

局域网 脉冲 光电二极管 晶体管
文件： 总11页 (文件大小：1515K)
中文：  中文翻译
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BSZ0909ND  
MOSFET  
PowerStageꢀ3x3  
PowerStageꢀ3x3  
Features  
·ꢀDualꢀN-channelꢀOptiMOS™ꢀMOSFET  
·ꢀEnhancementꢀmode  
·ꢀLogicꢀlevelꢀ(4.5Vꢀrated)  
·ꢀAvalancheꢀrated  
·ꢀ100%ꢀLead-free;ꢀRoHSꢀcompliant  
·ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
30  
V
RDS(on),max  
ID  
18  
mΩ  
A
20  
QOSS  
2.3  
1.8  
nC  
nC  
QG(0V..4.5V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSZ0909ND  
PG-WISON-8  
0909ND  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified,ꢀoneꢀtransistorꢀactive  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
20  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
8.1  
5.5  
4.1  
VGS=10ꢀV,ꢀTA=25ꢀ°C1)  
Continuous drain current  
ID  
A
VGS=4.5ꢀV,ꢀTA=70ꢀ°C1)  
VGS=4.5ꢀV,ꢀTA=25ꢀ°C2)  
Pulsed drain current3)  
ID,pulse  
EAS  
-
-
-
-
40  
4
A
TC=25ꢀ°C  
Avalanche energy, single pulse  
Gate source voltage  
-
mJ  
V
ID=9ꢀA,ꢀRGS=25ꢀΩ  
VGS  
-20  
20  
-
-
-
17  
1.9  
-
-
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=65ꢀ°C/W1)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
7.5  
°C/W -  
°C/W -  
Device on PCB,  
minimal footprint  
-
-
-
-
180  
65  
Device on PCB,  
RthJA  
°C/W -  
6 cm2 cooling area  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) device mounted on a minimum pad (one layer, 70 µm thick)  
3) See Diagram 3 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
30  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
1.2  
1.6  
2
VDS=VGS,ꢀID=250ꢀµA  
-
-
-
-
1
100  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=150ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
-
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
20  
14.5  
25  
18  
VGS=4.5ꢀV,ꢀID=9ꢀA  
VGS=10ꢀV,ꢀID=9ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
3.5  
-
7
14  
-
Ω
-
22  
S
|VDS|>2|ID|RDS(on)max,ꢀID=9ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
270  
88  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
360  
120  
-
Input capacitance1)  
Output capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz  
Reverse transfer capacitance  
11  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=9ꢀA,  
RG,ext=6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
5
-
-
-
-
ns  
ns  
ns  
ns  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=9ꢀA,  
RG,ext=6ꢀΩ  
2.5  
15  
2
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=9ꢀA,  
RG,ext=6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=9ꢀA,  
RG,ext=6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
0.8  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=15ꢀV,ꢀID=9ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
0.4  
-
0.5  
-
Qsw  
0.8  
-
Gate charge total  
Qg  
1.8  
2.6  
Gate plateau voltage  
Gate charge total  
Vplateau  
Qg  
2.8  
-
3.7  
5.2  
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge  
Qg(sync)  
Qoss  
1.5  
-
-
2.3  
VDD=15ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
17  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
Qrr  
-
40  
A
TC=25ꢀ°C  
Diode forward voltage  
0.92  
5
1.2  
-
V
VGS=0ꢀV,ꢀIF=9ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=9A,ꢀdiF/dt=400ꢀA/µs  
Reverse recovery charge  
nC  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
0.8  
5
4
3
2
1
0
0.6  
0.4  
0.2  
0.0  
10 V  
4.5 V  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
TAꢀ[°C]  
TAꢀ[°C]  
Ptot=f(TA),ꢀminimalꢀfootprint  
ID=f(TA),ꢀminimalꢀfootprint;ꢀparameter:ꢀVGS  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
0.5  
0.2  
10 µs  
DC  
101  
1 ms  
100 µs  
0.1  
100  
0.05  
0.02  
100  
0.01  
single pulse  
10-1  
10-1  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
40  
35  
4.5 V  
30  
30  
3.5 V  
25  
20  
15  
10  
5
3.5 V  
4 V  
10 V  
5 V  
4.5 V  
5 V  
20  
10  
0
6 V  
7 V  
3.2 V  
8 V  
10 V  
3 V  
2.8 V  
0
0
1
2
3
0
5
10  
15  
20  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
40  
50  
40  
30  
20  
10  
0
30  
20  
10  
150 °C  
25 °C  
0
0
1
2
3
4
5
0
10  
20  
30  
40  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
30  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
20  
max  
typ  
10  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=9ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
103  
102  
25 °C  
150 °C  
Ciss  
Coss  
102  
101  
Crss  
101  
100  
100  
0
5
10  
15  
20  
25  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
101  
12  
15 V  
24 V  
10  
8
25 °C  
6 V  
100 °C  
125 °C  
100  
6
4
2
10-1  
0
100  
101  
102  
103  
0
1
2
3
4
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=9ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Gate charge waveforms  
34  
32  
30  
28  
26  
24  
22  
20  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WISON-8,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2016-12-05  
PowerStageꢀ3x3  
BSZ0909ND  
RevisionꢀHistory  
BSZ0909ND  
Revision:ꢀ2016-12-05,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2016-12-05  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
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81726ꢀMünchen,ꢀGermany  
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG  
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2016-12-05  

相关型号：

BSZ0909NS

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BSZ0909NSXT

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