BSZ097N04LS G [INFINEON]
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
| 型号： | BSZ097N04LS G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。 开关 电机 服务器 转换器 |
| 文件： | 总11页 (文件大小：1557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ097N04LSꢀG
MOSFET
S3O8
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
Features
•ꢀFastꢀswitchingꢀMOSFETꢀforꢀSMPS
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀN-channel;ꢀLogicꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀSuperiorꢀthermalꢀresistance
•ꢀ100%ꢀAvalancheꢀtested
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
VDS
40
V
RDS(on),max
ID
9.7
mΩ
A
47
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSZ097N04LS G
PG-TSDSON-8
097N04L
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
47
30
40
25
12
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=60ꢀK/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
188
20
A
TC=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
20
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
-20
20
-
-
-
-
-
35
2.1
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=60ꢀK/W2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
3.6
K/W
K/W
-
-
Device on PCB,
-
-
60
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=14ꢀµA
1.2
2
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
11.4
8.1
14.2
9.7
VGS=4.5ꢀV,ꢀID=20ꢀA
VGS=10ꢀV,ꢀID=20ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1
-
-
Ω
-
Transconductance
24
47
S
|VDS|>2|ID|RDS(on)max,ꢀID=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
1400 1900 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
340
16
450
-
pF
pF
Reverse transfer capacitance
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
3.5
2.4
16
-
-
-
-
ns
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG=1.6ꢀΩ
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG=1.6ꢀΩ
2.8
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
4.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
2.3
-
1.9
-
Qsw
4.3
-
Gate charge total1)
Qg
18
24
Gate plateau voltage
Gate charge total1)
Vplateau
Qg
3.3
-
8.6
11.4
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
17
-
-
13
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
29
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
188
1.2
-
A
TC=25ꢀ°C
Diode forward voltage
0.85
15
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
50
40
30
20
10
0
30
20
10
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
100
10-1
0.5
10 µs
100 µs
100
0.2
1 ms
0.1
0.05
0.02
10 ms
10-1
0.01
DC
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
140
20
10 V
3.5 V
120
5 V
16
100
4.5 V
4 V
12
80
4.5 V
5 V
60
4 V
8
4
0
10 V
40
3.5 V
20
3.2 V
3 V
2.8 V
0
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
140
120
120
100
80
90
60
30
0
60
40
150 °C
20
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
16
2.5
2.0
1.5
1.0
0.5
0.0
12
98 %
typ
8
4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=20ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=14ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
101
100
102
101
100
Coss
Crss
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
20 V
32 V
10
8
8 V
100 °C
101
6
25 °C
4
125 °C
2
100
0
100
101
102
103
0
4
8
12
16
20
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=20ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
40
35
30
25
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-08-14
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
BSZ097N04LSꢀG
RevisionꢀHistory
BSZ097N04LS G
Revision:ꢀ2020-08-14,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update current rating and footnotes
2.1
2020-08-14
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-08-14
相关型号：
BSZ097N04LSGATMA1
Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ097N04LSGXT
Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ097N10NS5
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
INFINEON
BSZ097N10NS5ATMA1
Power Field-Effect Transistor, 8A I(D), 100V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN
INFINEON
BSZ100N03LSGATMA1
Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ100N06LS3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
BSZ100N06LS3GATMA1
Power Field-Effect Transistor, 11A I(D), 60V, 0.0179ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ100N06LS3GXT
Power Field-Effect Transistor, 11A I(D), 60V, 0.0179ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
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