BSZ097N04LSG [INFINEON]
OptiMOS™3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | BSZ097N04LSG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™3 Power-Transistor |
| 文件： | 总9页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ097N04LS G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
40
9.7
40
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mΩ
A
PG-TSDSON-8
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ097N04LS G
PG-TSDSON-8
097N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V
V
GS=10 V, T C=25 °C
Continuous drain current
40
30
A
GS=10 V, T C=100 °C
V
V
GS=4.5 V, T C=25 °C
40
25
GS=4.5 V,
T C=100 °C
V
R
GS=10 V, T A=25 °C,
12
thJA=60 K/W2)
Pulsed drain current3)
I D,pulse
I AS
T C=25 °C
160
20
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=20 A, R GS=25 Ω
20
mJ
V
±20
1) J-STD20 and JESD22
Rev. 2.0
page 1
2010-03-18
BSZ097N04LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
35
W
T A=25 °C,
R
2.1
thJA=60 K/W2)
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
R thJA
Thermal resistance, junction - case
Device on PCB
-
-
-
-
3.6
60
K/W
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=14 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
-
V
1.2
2
V
DS=40 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=40 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=20 A
GS=10 V, I D=20 A
Gate-source leakage current
-
-
-
-
10
11.4
8.1
1
100 nA
R DS(on)
Drain-source on-state resistance
14.2
9.7
-
mΩ
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=20 A
,
Transconductance
24
47
-
S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 2
2010-03-18
BSZ097N04LS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
1400
340
16
1900 pF
V
GS=0 V, V DS=20 V,
C oss
Crss
t d(on)
t r
450
-
f =1 MHz
3.5
2.4
16
-
-
-
-
ns
V
DD=20 V, V GS=10 V,
I D=20 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
2.8
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
4.6
2.3
1.9
4.3
18
-
-
nC
Q g(th)
Q gd
-
V
V
DD=20 V, I D=20 A,
GS=0 to 10 V
Q sw
-
Q g
Gate charge total
24
-
V plateau
Gate plateau voltage
3.3
V
V
V
DD=20 V, I D=20 A,
GS=0 to 4.5 V
Q g
Gate charge total
-
8.6
11.4 nC
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
17
13
-
-
GS=0 to 10 V
V
DD=20 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
29
A
T C=25 °C
I S,pulse
160
V
GS=0 V, I F=20 A,
V SD
Q rr
Diode forward voltage
-
-
0.85
15
1.2
-
V
T j=25 °C
V R=20 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2010-03-18
BSZ097N04LS G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
40
30
20
10
0
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
0.5
10 µs
1
0.2
100 µs
0.1
DC
101
0.05
0.02
1 ms
10 ms
0.01
0.1
single pulse
100
10-1
0
0
0
0
0
0
1
0.01
10-1
100
101
102
10-6
10-5
10-4
10-3
p [s]
10-2
10-1
100
V
DS [V]
t
Rev. 2.0
page 4
2010-03-18
BSZ097N04LS G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
140
20
5 V
3.5 V
10 V
120
16
12
8
4.5 V
4 V
100
80
60
40
20
0
4.5 V
5 V
10 V
4 V
4
3.5 V
3.2 V
2.8 V
3 V
0
0
0
1
2
3
10
20
30
40
50
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
120
100
80
120
90
60
30
0
60
40
20
150 °C
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
V
GS [V]
I
D [A]
Rev. 2.0
page 5
2010-03-18
BSZ097N04LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=20 A; V GS=10 V
V
GS(th)=f(T j); V GS=V DS; I D=14 µA
16
2.5
2
1.5
1
12
98 %
typ
8
4
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
103
102
101
100
Ciss
Coss
100
10
25 °C
150 °C, 98%
150 °C
25 °C, 98%
Crss
1
0
10
20
DS [V]
30
40
0.0
0.5
1.0
SD [V]
1.5
2.0
V
V
Rev. 2.0
page 6
2010-03-18
BSZ097N04LS G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=20 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
20 V
10
8
8 V
32 V
25 °C
10
6
100 °C
4
125 °C
2
1
1
0
0
10
100
1000
4
8
Q
12
gate [nC]
16
20
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
45
V GS
Q g
40
35
30
25
20
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
page 7
2010-03-18
BSZ097N04LS G
Package Outline
PG-TSDSON-8
Rev. 2.0
page 8
2010-03-18
BSZ097N04LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 9
2010-03-18
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