BSZ0909NS [INFINEON]
n-Channel Power MOSFET; N沟道功率MOSFET型号: | BSZ0909NS |
厂家: | Infineon |
描述: | n-Channel Power MOSFET |
文件: | 总11页 (文件大小:1231K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
n-Channel Power MOSFET
OptiMOS™
BSZ0909NS
Data Sheet
3.1, 2010-11-01
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSZ0909NS
1
Description
OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performancepackages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
S 1
S 2
S 3
G 4
8 D
7 D
Features
6 D
5 D
•
•
•
•
•
•
•
•
Optimized for high performance Buck converter
100% avalanche tested
Very low on-resistance RDS(on) @ VGS=4.5 V
Ultra low gate (Qg) and output charge (Qoss) for given RDS(on)
Qualified according to JEDEC1) for target applications
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Parameter
VDS
Key Performance Parameters
Value
34
Unit
Related Links
V
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
RDS(on),max
ID
12
m#
A
36
QOSS
8.9
6.1
nC
Qg.typ
Type
Package
PG-TSDSON-8
Marking
BSZ0909NS
0909NS
1) J-STD20 and JESD22
Final Data Sheet
1
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
ID
-
-
36
23
32
21
9
A
VGS=10 V, TC=25 °C
VGS=10 V, TC=100 °C
VGS=4.5 V, TC=25 °C
VGS=4.5 V, TC=100 °C
VGS=4.5 V, TA=25 °C,
RthJA=60 K/W1))
Pulsed drain current2)
ID,pulse
IAS
-
-
-
-
-
-
144
20
TC=25 °C
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
-
EAS
VGS
Ptot
-
9
mJ
V
ID=20 A,RGS=25 #
-20
-
20
Power dissipation
25
W
TC=25 °C
2.1
150
TA=25 °C, RthJA=60 K/W1))
Operating and storage temperature Tj,Tstg
-55
55
-
°C
IEC climatic category; DIN IEC 68-1
150 56
Ncm
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
5.1
Thermal resistance, junction - case RthJC
Device on PCB RthJA
-
-
°K/W
-
-
60
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air
Final Data Sheet
2
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Symbol
Parameter
Values
Typ.
Unit
V
Note / Test Condition
Min.
Drain-source breakdown voltage V(BR)DSS 34
Max.
-
-
V
V
V
GS=0 V, ID=1.0 mA
DS=VGS, ID=250 µA
DS=34 V, VGS=0 V,
Gate threshold voltage
VGS(th)
IDSS
1
-
-
2
1
Zero gate voltage drain current
0.1
µA
Tj=25 °C
DS=34 V, VGS=0 V,
Tj=125 °C
-
10
100
V
Gate-source leakage current
IGSS
-
10
12
10
3
100
15
12
-
nA
V
V
V
GS=16 V, VDS=0 V
GS=4.5 V, ID=12 A
GS=10 V, ID=20 A
Drain-source on-state resistance RDS(on)
-
m#
-
Gate resistance
RG
gfs
-
#
Transconductance
24
47
S
|VDS|>2|ID|RDS(on)max
ID=30 A
,
Table 5
Dynamic characteristics
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
975
340
21
1310
pF
ns
V
GS=0 V, VDS=15 V,
f=1 MHz
450
-
-
-
-
-
4.5
2.2
16
VDD=15 V, VGS=10 V,
ID=30 A, RG= 1.6 #
Turn-off delay time
Fall time
td(off)
tf
2
Final Data Sheet
3
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics
Table 6
Gate charge characteristics1)
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
3.3
1.5
1.6
3.2
6.1
3.4
13
-
nC
V
DD=15 V,
ID=30 A,
V
Qg(th)
Qgd
-
GS=0 to 4.5 V
-
Qsw
-
Gate charge total
Qg
8.1
-
Gate plateau voltage
Gate charge total
Vplateau
Qg
V
17
nC
V
DD=15 V,
ID=30 A,
V
GS=0 to 10V
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
5.3
8.9
V
V
DS=0.1 V,
GS=0 to 4.5 V
V
DD=15 V, VGS=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
23
Diode continuous forward current Is
A
TC=25 °C
Diode pulse current
IS,pulse
148
-
Diode forward voltage
VSD
-
-
0.9
-
V
VGS=0 V, IF=20 A,
Tj=25 °C
Reverse recovery charge
Qrr
10
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Final Data Sheet
4
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
P
tot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
4 Max. transient thermal impedance
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Z(thJC)=f(tp); parameter: D=tp/T
Final Data Sheet
5
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=20 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
12 Forward characteristics of reverse diode
11 Typ. capacitances
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 ꢀ ꢁ parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Package outlines
6
Package outlines
Figure 1
Outlines PG-TSDSON-8, dimensions in mm/inches
Final Data Sheet
9
3.1, 2010-11-01
OptiMOS™ Power-MOSFET
BSZ0909NS
Revision History
7
Revision History
Revision History: 2010-11-01, 3.1
Previous Revision:
Revision Subjects (major changes since last revision)
0.9
2.0
Release of target data sheet
Release Final version
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Edition 2010-11-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Final Data Sheet
10
3.1, 2010-11-01
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