BSZ0902NSATMA1 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | BSZ0902NSATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ0902NS
OptiMOSTM Power-MOSFET
Features
Product Summary
VDS
30
2.6
3.5
40
V
• Optimized for high performance Buck converter (Server,VGA)
RDS(on),max
VGS=10 V
VGS=4.5 V
mW
• Very Low FOMQOSS for High Frequency SMPS
• Low FOMSW for High Frequency SMPS
ID
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) @ V GS=4.5 V
PG-TSDSON-8 (fused leads)
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Marking
0902NS
Type
Package
BSZ0902NS
PG-TSDSON-8 (fused leads)
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
Continuous drain current
40
40
40
A
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
40
19
V GS=4.5 V, T A=25 °C,
R thJA=60 K/W
Pulsed drain current2)
I D,pulse
I AS
T C=25 °C
160
20
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=20 A, R GS=25 W
70
mJ
V
±20
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
2013-05-13
BSZ0902NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
48
W
T A=25 °C,
R thJA=60 K/W
2.1
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
R thJA
Thermal resistance, junction - case
Device on PCB
-
-
-
-
2.6
60
K/W
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
Drain-source breakdown voltage
Gate threshold voltage
30
-
-
-
V
1.2
2
V DS=30 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=30 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
10
2.8
2.2
0.9
100 nA
R DS(on) V GS=4.5 V, I D=20 A
V GS=10 V, I D=20 A
R G
Drain-source on-state resistance
3.5
2.6
1.8
mW
-
Gate resistance
0.5
W
|V DS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
55
110
-
S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2013-05-13
BSZ0902NS
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
1700
600
88
2261 pF
V GS=0 V, V DS=15 V,
f =1 MHz
C oss
Crss
t d(on)
t r
798
-
4.2
5.2
21
-
-
-
-
ns
V DD=15 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
3.6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
4.4
2.7
4.0
5.6
13
5.9
-
nC
Q g(th)
Q gd
5.2
-
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Q sw
Q g
Gate charge total
17
-
V plateau
Gate plateau voltage
2.6
V
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g
Gate charge total
-
26
35
nC
V DS=0.1 V,
V GS=0 to 4.5 V
Q g(sync)
Gate charge total, sync. FET
-
-
11
16
-
Q oss
V DD=15 V, V GS=0 V
Output charge
21
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
40
A
T C=25 °C
I S,pulse
160
V GS=0 V, I F=20 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.83
15
1
-
V
V R=15 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-05-13
BSZ0902NS
1 Power dissipation
2 Drain current
I D=f(T C)
P tot=f(T C)
parameter: V GS
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
10 V
4.5 V
0
0
0
40
80
120
160
40
80
120
160
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
101
100
10-1
10 µs
0.5
1
100 µs
0.2
0.1
1 ms
0.05
0.1
0.02
10 ms
0.01
DC
single pulse
0
0
0
0
0
0
1
0.01
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.2
page 4
2013-05-13
BSZ0902NS
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
6
160
5 V
4.5 V
10 V
140
5
3.2 V
120
100
80
60
40
20
0
3.2 V
4
3.5 V
4 V
3 V
3
4.5 V
5 V
7 V
8 V
10 V
2
1
0
2.8 V
0
10
20
30
ID [A]
40
50
0
1
2
3
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
120
100
80
210
180
150
120
90
60
60
40
150 °C
30
20
25 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.2
page 5
2013-05-13
BSZ0902NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
4
3
2.5
2
1.5
1
typ
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
104
1000
Ciss
Coss
1000
100
10
103
100
25 °C
150 °C
Crss
102
10
101
1
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
VSD [V]
0.8
1.0
1.2
VDS [V]
Rev. 2.2
page 6
2013-05-13
BSZ0902NS
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
15 V
6 V
24 V
25 °C
10
6
100 °C
125 °C
4
2
1
0
1
10
100
1000
0
10
20
30
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
34
32
30
28
26
24
22
20
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.2
page 7
2013-05-13
BSZ0902NS
Package Outline
PG-TSDSON-8 (fused leads)
Rev. 2.2
page 8
2013-05-13
BSZ0902NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2013-05-13
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