select brandShort,logo,brand from pdf_brand where id=10020 limit 1 BSC057N08NS3GATMA1_技术文档

BSC057N08NS3GATMA1 [INFINEON]

Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8;
BSC057N08NS3GATMA1
型号: BSC057N08NS3GATMA1
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

开关 脉冲 光电二极管 晶体管
文件: 总9页 (文件大小:587K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BSC059N03S

OptiMOS2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N03SG

OptiMOS™2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N03SGAUMA1

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N03SGXT

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N04LS G

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机。此外,这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N04LS6

Power Field-Effect Transistor, 49A I(D), 40V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N04LSG

OptiMOS™3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC059N04LSGXT

Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC060N10NS3 G

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC060N10NS3G

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC060N10NS3GXT

Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC060P03NS3E G

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求,例如导通电阻特性和品质因数特性。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC060P03NS3EG

OptiMOS P3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC061N08NS5

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC065N06LS5

英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC067N06LS3G

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC067N06LS3GATMA1

Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC067N06LS3GXT

Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC0702LS

Power Field-Effect Transistor,

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

BSC0703LS

Power Field-Effect Transistor,

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON