BSC060N10NS3GXT [INFINEON]
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8;型号: | BSC060N10NS3GXT |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 |
文件: | 总10页 (文件大小:415K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSC060N10NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
V DS
100
6
V
Features
R DS(on),max
I D
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
mΩ
A
90
• N-channel, normal level
PG-TDSON-8
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC060N10NS3 G
PG-TDSON-8
060N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
90
66
A
T C=100 °C
T A=25 °C,
R
14.9
thJA=50 K/W2)
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
360
230
I D=50 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
125
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
Rev. 2.4
page 1
2009-10-21
BSC060N10NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1
K/W
R thJA
minimal footprint
62
50
Thermal resistance,
junction - ambient
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=90 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.7
3.5
V
DS=100 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
10
1
µA
T j=25 °C
V
DS=100 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=50 A
GS=6 V, I D=25 A
Gate-source leakage current
-
-
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
5.3
6.6
1.6
6
11.5
-
mΩ
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=50 A
,
Transconductance
43
85
-
S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2
3) see figure 3
Rev. 2.4
page 2
2009-10-21
BSC060N10NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3700
650
25
4900 pF
V
GS=0 V, V DS=50 V,
C oss
C rss
t d(on)
t r
860
-
f =1 MHz
20
-
-
-
-
ns
16
V
DD=50 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
45
12
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
15
9
-
-
nC
Q gd
V
V
DD=50 V, I D=25 A,
Q sw
Q g
13
51
4.2
68
-
GS=0 to 10 V
Gate charge total
68
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=50 V, V GS=0 V
91
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
90
A
T C=25 °C
I S,pulse
360
V
GS=0 V, I F=50 A,
V SD
Diode forward voltage
-
1
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
61
-
-
ns
V R=50 V, I F=25 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
109
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2009-10-21
BSC060N10NS3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
140
120
100
80
100
90
80
70
60
50
40
30
20
10
0
60
40
20
0
0
40
80
120
160
0
40
80
120
160
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
102
101
100
10-1
101
100 ns
1 µs
10 µs
100
0.5
100 µs
1 ms
0.2
0.1
DC
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 2.4
page 4
2009-10-21
BSC060N10NS3 G
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
R
parameter: V GS
parameter: V GS
120
12
6 V
10 V
4.5 V
5.5 V
7 V
100
80
60
40
20
0
10
8
5 V
5 V
5.5 V
6 V
7 V
6
10 V
4
4.5 V
2
0
0
1
2
3
0
20
40
60
80
100
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
120
100
80
140
120
100
80
60
60
40
40
20
150 °C
20
25 °C
0
0
0
2
4
6
0
20
40
60
I
80
D [A]
100
120
140
V
GS [V]
Rev. 2.4
page 5
2009-10-21
BSC060N10NS3 G
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
9 Drain-source on-state resistance
R
DS(on)=f(T j); I D=50 A; V GS=10 V
V
parameter: I D
12
10
4
3.5
3
900 µA
8
2.5
2
90 µA
98 %
6
typ
1.5
1
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
102
101
100
Coss
150 °C, 98%
25 °C
100
10
Crss
150 °C
25 °C, 98%
1
0
0
20
40
DS [V]
60
80
0.5
1
1.5
2
V
V
SD [V]
Rev. 2.4
page 6
2009-10-21
BSC060N10NS3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=25 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
8
6
4
2
0
80 V
25 °C
50 V
100 °C
20 V
10
125 °C
1
1
10
100
1000
0
10
20
30
40
50
60
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
110
V GS
Q g
105
100
95
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.4
page 7
2009-10-21
BSC060N10NS3 G
Package Outline: PG-TDSON-8
Rev. 2.4
page 8
2009-10-21
BSC060N10NS3 G
Dimensions in mm
Rev. 2.4
page 9
2009-10-21
BSC060N10NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
page 10
2009-10-21
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