BSC060P03NS3EG [INFINEON]
OptiMOS P3 Power-Transistor; P3的OptiMOS功率三极管
| 型号： | BSC060P03NS3EG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS P3 Power-Transistor |
| 文件： | 总9页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC060P03NS3E G
OptiMOSTM P3 Power-Transistor
Product Summary
V DS
-30
6.0
V
Features
R DS(on),max
I D
mΩ
A
• single P-Channel in SuperSO8
• Qualified according JEDEC1) for target applications
-100
• 150 °C operating temperature
PG-TDSON-8
• 100% Avalanche rated
• V GS=25 V, specially suited for notebook applications
• ESD protected
• Pb-free; RoHS compliant
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
Marking
Lead free
Halogen free
Packing
Type
Package
Yes
060P3NSE Yes
non dry
BSC060P03NS3E G PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=70 °C
T A=25 °C
T C=25 °C2)
-100
-82.0
Continuous drain current
A
17.7
I D,pulse
E AS
-200
Pulsed drain current
149
I D=-50 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
P tot
±25
T C =25 °C
T A=25 °C2)
83
Power dissipation
W
2.5
T j, T stg
-55 ... 150
class 3 (> 4 kV)
260
Operating and storage temperature
ESD class
°C
°C
JESD22-A114 HBM
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 2.1
page 1
2009-11-16
BSC060P03NS3E G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
-
-
-
1.5
50
K/W
Thermal resistance,
junction - ambient
6 cm2 cooling area2)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V
V
GS=0 V, I D=-250µA
DS=V GS, I D=-150 µA
Drain-source breakdown voltage
Gate threshold voltage
-30
-
-
V
V GS(th)
-3.1
-2.5
-1.9
V
DS=-30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
-1
µA
T j=25 °C
V
DS=-30 V, V GS=0 V,
-
-
-
-
-
-100
-10
T j=125 °C
I GSS
V
V
GS=-25 V, V DS=0 V
GS=-6 V, I D=-35 A
Gate-source leakage current
µA
R DS(on)
Drain-source on-state resistance
5.7
9.6
mΩ
V
GS=-10 V, I D=-50 A
-
-
4.1
5.9
63
6.0
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=-30 A
,
Transconductance
32
S
2
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2009-11-16
BSC060P03NS3E G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
4530
2110
150
15
6020 pF
2810
V
GS=0 V, V DS=-15 V,
C oss
C rss
t d(on)
t r
f =1 MHz
220
22
209
99
ns
V
DD=-15 V, V GS=-
139
66
10 V, I D=-50 A,
R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
34
51
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
20
7
27
10
13
30
81
-
nC
Q g(th)
Q gd
9
V
V
DD=-15 V, I D=-50 A,
GS=0 to -10 V
Q sw
22
61
4.5
49
Q g
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=-15 V, V GS=0 V
65
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
200
A
T C=25 °C
I S,pulse
V
GS=0 V, I F=-50 A,
V SD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-
-1.1
V
T j=25 °C
V R=15 V, I F=|I S|,
di F/dt =100 A/µs
t rr
51
49
-
-
ns
nC
Q rr
Rev. 2.1
page 3
2009-11-16
BSC060P03NS3E G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); |V GS|≥10 V
100
90
80
70
60
50
40
30
20
10
0
120
110
100
90
80
70
60
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C1); D =0
4 Max. transient thermal impedance
thJS=f(t p)
Z
parameter: t p
parameter: D =t p/T
101
1000
10
1 µs
10 µs
102
100
100 µs
100
1
0.5
0.2
1 ms
101
10
limited by on-state
resistance
10 ms
0.1
100
1
0.05
DC
10-1
0.1
0.02
0.01
single pulse
10-1
0.1
10-2
10-2
0.01
0.1
0.01
0.00001
1
10
100
0.0001
0.001
0.01
0.1
1
10
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-V DS [V]
t
p [s]
Rev. 2.1
page 4
2009-11-16
BSC060P03NS3E G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
70
30
-10 V
-5.0V
60
25
20
15
10
5
-4.5 V
-4.0 V
50
40
30
20
10
0
-4.5 V
-5.0V
-4.0 V
-6.0 V
-10 V
-3.7 V
-3.5V
0
0
0
1
2
3
10
20
30
40
-V DS [V]
-ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
180
160
140
120
100
80
200
180
160
140
120
100
80
60
60
25 °C
40
40
150 °C
20
20
0
0
0
1
2
3
4
5
6
0
20 40 60 80 100 120 140 160 180 200
-V GS [V]
-ID [A]
Rev. 2.1
page 5
2009-11-16
BSC060P03NS3E G
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS; I D=-150 µA
9 Drain-source on-state resistance
R
DS(on)=f(T j); I D=-50 A; V GS=-10 V
V
10
4
3.5
3
8
max.
2.5
2
typ.
98 %
6
min.
1.5
1
typ.
4
0.5
0
2
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
100
Ciss
Coss
25 °C, typ
150 °C, 98%
103
102
101
10
150 °C, typ
Crss
1
25 °C, 98%
0.1
0
0
5
10
15
20
25
30
0.5
1
1.5
-V SD [V]
-V DS [V]
Rev. 2.1
page 6
2009-11-16
BSC060P03NS3E G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-50 A pulsed
V
I
parameter: T j(start)
parameter: V DD
102
10
9
8
7
6
5
4
3
2
1
25 °C
-15 V
-6 V
100 °C
-24 V
125 °C
101
0
0
20
40
60
100
100
101
102
103
t
AV [µs]
-Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-250 µA
36
V GS
Q g
34
32
30
28
26
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.1
page 7
2009-11-16
BSC060P03NS3E G
Package Outline
PG-TDSON-8
Dimensions in mm
Rev. 2.1
page 8
2009-11-16
BSC060P03NS3E G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2009-11-16
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