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BSC060N10NS3G [INFINEON]

OptiMOS3 Power-Transistor; OptiMOS3功率三极管
BSC060N10NS3G
型号： BSC060N10NS3G
厂家： Infineon    Infineon
描述：

OptiMOS3 Power-Transistor
OptiMOS3功率三极管
文件： 总10页 (文件大小：415K)
中文：  中文翻译
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BSC060N10NS3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
V DS  
100  
6
V
Features  
R DS(on),max  
I D  
• Very low gate charge for high frequency applications  
• Optimized for dc-dc conversion  
mΩ  
A
90  
• N-channel, normal level  
PG-TDSON-8  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 150 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSC060N10NS3 G  
PG-TDSON-8  
060N10NS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
90  
66  
A
T C=100 °C  
T A=25 °C,  
R
14.9  
thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
360  
230  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
125  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
Rev. 2.4  
page 1  
2009-10-21  
BSC060N10NS3 G  
Values  
Parameter  
Symbol Conditions  
Unit  
min.  
typ.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
-
-
1
K/W  
R thJA  
minimal footprint  
62  
50  
Thermal resistance,  
junction - ambient  
6 cm2 cooling area2)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=1 mA  
DS=V GS, I D=90 µA  
Drain-source breakdown voltage  
Gate threshold voltage  
100  
2
-
-
V
2.7  
3.5  
V
DS=100 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.01  
10  
1
µA  
T j=25 °C  
V
DS=100 V, V GS=0 V,  
100  
T j=125 °C  
I GSS  
V
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=50 A  
GS=6 V, I D=25 A  
Gate-source leakage current  
-
-
-
-
1
100 nA  
R DS(on)  
Drain-source on-state resistance  
5.3  
6.6  
1.6  
6
11.5  
-
mΩ  
R G  
g fs  
Gate resistance  
Ω
|V DS|>2|I D|R DS(on)max  
I D=50 A  
,
Transconductance  
43  
85  
-
S
1)J-STD20 and JESD22  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2
3) see figure 3  
Rev. 2.4  
page 2  
2009-10-21  
BSC060N10NS3 G  
Values  
Parameter  
Symbol Conditions  
Unit  
min.  
typ.  
max.  
Dynamic characteristics  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
-
-
-
-
-
-
-
3700  
650  
25  
4900 pF  
V
GS=0 V, V DS=50 V,  
C oss  
C rss  
t d(on)  
t r  
860  
-
f =1 MHz  
20  
-
-
-
-
ns  
16  
V
DD=50 V, V GS=10 V,  
I D=25 A, R G=1.6 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
45  
12  
Gate Charge Characteristics4)  
Gate to source charge  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
15  
9
-
-
nC  
Q gd  
V
V
DD=50 V, I D=25 A,  
Q sw  
Q g  
13  
51  
4.2  
68  
-
GS=0 to 10 V  
Gate charge total  
68  
-
V plateau  
Q oss  
Gate plateau voltage  
Output charge  
V
V
DD=50 V, V GS=0 V  
91  
nC  
Reverse Diode  
I S  
Diode continous forward current  
Diode pulse current  
-
-
-
-
90  
A
T C=25 °C  
I S,pulse  
360  
V
GS=0 V, I F=50 A,  
V SD  
Diode forward voltage  
-
1
1.2  
V
T j=25 °C  
t rr  
Reverse recovery time  
-
-
61  
-
-
ns  
V R=50 V, I F=25 A,  
di F/dt =100 A/µs  
Q rr  
Reverse recovery charge  
109  
nC  
4) See figure 16 for gate charge parameter definition  
Rev. 2.4  
page 3  
2009-10-21  
BSC060N10NS3 G  
1 Power dissipation  
2 Drain current  
P
tot=f(T C)  
I D=f(T C); V GS≥10 V  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
40  
20  
0
0
40  
80  
120  
160  
0
40  
80  
120  
160  
T
C [°C]  
T
C [°C]  
3 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
thJC=f(t p)  
Z
parameter: D =t p/T  
103  
102  
101  
100  
10-1  
101  
100 ns  
1 µs  
10 µs  
100  
0.5  
100 µs  
1 ms  
0.2  
0.1  
DC  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
V
DS [V]  
t p [s]  
Rev. 2.4  
page 4  
2009-10-21  
BSC060N10NS3 G  
6 Typ. drain-source on resistance  
DS(on)=f(I D); T j=25 °C  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
R
parameter: V GS  
parameter: V GS  
120  
12  
6 V  
10 V  
4.5 V  
5.5 V  
7 V  
100  
80  
60  
40  
20  
0
10  
8
5 V  
5 V  
5.5 V  
6 V  
7 V  
6
10 V  
4
4.5 V  
2
0
0
1
2
3
0
20  
40  
60  
80  
100  
V
DS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
140  
120  
100  
80  
140  
120  
100  
80  
60  
60  
40  
40  
20  
150 °C  
20  
25 °C  
0
0
0
2
4
6
0
20  
40  
60  
I
80  
D [A]  
100  
120  
140  
V
GS [V]  
Rev. 2.4  
page 5  
2009-10-21  
BSC060N10NS3 G  
10 Typ. gate threshold voltage  
GS(th)=f(T j); V GS=V DS  
9 Drain-source on-state resistance  
R
DS(on)=f(T j); I D=50 A; V GS=10 V  
V
parameter: I D  
12  
10  
4
3.5  
3
900 µA  
8
2.5  
2
90 µA  
98 %  
6
typ  
1.5  
1
4
2
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
T j [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
104  
1000  
Ciss  
103  
102  
101  
100  
Coss  
150 °C, 98%  
25 °C  
100  
10  
Crss  
150 °C  
25 °C, 98%  
1
0
0
20  
40  
DS [V]  
60  
80  
0.5  
1
1.5  
2
V
V
SD [V]  
Rev. 2.4  
page 6  
2009-10-21  
BSC060N10NS3 G  
13 Avalanche characteristics  
AS=f(t AV); R GS=25 Ω  
14 Typ. gate charge  
GS=f(Q gate); I D=25 A pulsed  
V
I
parameter: T j(start)  
parameter: V DD  
100  
10  
8
6
4
2
0
80 V  
25 °C  
50 V  
100 °C  
20 V  
10  
125 °C  
1
1
10  
100  
1000  
0
10  
20  
30  
40  
50  
60  
Q
gate [nC]  
t
AV [µs]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
BR(DSS)=f(T j); I D=1 mA  
110  
V GS  
Q g  
105  
100  
95  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
90  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
Rev. 2.4  
page 7  
2009-10-21  
BSC060N10NS3 G  
Package Outline: PG-TDSON-8  
Rev. 2.4  
page 8  
2009-10-21  
BSC060N10NS3 G  
Dimensions in mm  
Rev. 2.4  
page 9  
2009-10-21  
BSC060N10NS3 G  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics. With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please  
contact the nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information  
on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user  
or other persons may be endangered.  
Rev. 2.4  
page 10  
2009-10-21  

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