BSB008NE2LX [INFINEON]
n-Channel Power MOSFET; N沟道功率MOSFET型号: | BSB008NE2LX |
厂家: | Infineon |
描述: | n-Channel Power MOSFET |
文件: | 总13页 (文件大小:1514K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
n-Channel Power MOSFET
OptiMOS™
BSB008NE2LX
Data Sheet
0.2, 2010-07-28
Target
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB008NE2LX
1
Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
•
•
Optimized for e-fuse and OR-ing application
100% avalanche tested
Ultra low RDS(on) in CanPAK-MX footprint
Qualified according to JEDEC1) for target applications
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double.sided cooling
Compatible with DirectFET® package MX footprint and outline2)
100% Rg Tested
Low profile (<0.7 mm)
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Parameter
VDS
Key Performance Parameters
Value
25
Unit
Related Links
V
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
RDS(on),max
0.8
mΩ
A
ID
180
74
QOSS
nC
Qg.typ
240
Type
Package
MG-WDSON-2
Marking
BSB008NE2LX
tbd
1) J-STD20 and JESD22
2) CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET ® is a registered
trademark of International Rectifier Corporation.
Target Data Sheet
1
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
ID
-
-
180
170
47
A
VGS=10 V, TC=25 °C
V
GS=10 V, TC=100 °C
V
GS=10 V, TA=25 °C,
R
thJA=45 K/W
Pulsed drain current1)
ID,pulse
IAS
-
-
-
-
-
-
400
40
TC=25 °C
Avalanche current, single pulse2)
Avalanche energy, single pulse
Gate source voltage
-
EAS
VGS
Ptot
-
290
20
mJ
V
ID=40 A,RGS=25 Ω
-20
-
Power dissipation
89
W
TC=25 °C
2.8
150
TA=25 °C, RthJA=45 K/W
Operating and storage temperature Tj,Tstg
-40
55
-
°C
IEC climatic category; DIN IEC 68-1
150 56
Ncm
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
-
Thermal resistance, junction - case RthJC
RthJA
-
1.0
°K/W bottom
1.4
45
top
Device on PCB
-
-
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.
PCB is vertical in still air.
Target Data Sheet
2
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Symbol
Parameter
Values
Unit
V
Note / Test Condition
Min.
Drain-source breakdown voltage V(BR)DSS 25
Typ.
Max.
-
-
VGS=0 V, ID=1 mA
Gate threshold voltage
VGS(th)
IDSS
1
-
-
2.2
10
VDS=VGS, ID=250 µA
Zero gate voltage drain current
0.1
µA
VDS=25 V, VGS=0 V,
Tj=25 °C
-
10
100
VDS=25 V, VGS=0 V,
Tj=125 °C
Gate-source leakage current
IGSS
-
10
100
1.0
0.8
-
nA
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=25A
VGS=10 V, ID=30 A
Drain-source on-state resistance RDS(on)
-
0.75
0.6
0.5
240
mΩ
-
Gate resistance
RG
gfs
-
Ω
Transconductance
120
S
|VDS|>2|ID|RDS(on)max
ID=30 A
,
Table 5
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
13000
4300
3300
tbd
Max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
ns
VGS=0 V, VDS=12 V,
f=1 MHz
VDD=12V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
tbd
Turn-off delay time
Fall time
td(off)
tf
tbd
tbd
Target Data Sheet
3
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics
Table 6
Gate charge characteristics1)
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
30
-
nC
VDD=12 V,
ID=30 A,
VGS=0 to 4.5 V
Qg(th)
Qgd
Qsw
Qg
21
-
65
-
74
-
Gate charge total
137
2.2
240
8.1
Gate plateau voltage
Gate charge total
Vplateau
Qg
-
-
V
nC
VDD=12 V,
ID=30 A,
VGS=0 to 10V
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
-
83
75
-
VDS=0.1 V,
VGS=0 to 4.5 V
VDD=12 V, VGS=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
89
Diode continuous forward current Is
-
-
-
-
A
TC=25 °C
Diode pulse current
IS,pulse
-
400
-
Diode forward voltage
VSD
0.78
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
-
-
tbd
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Target Data Sheet
4
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
4 Max. transient thermal impedance
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Z(thJC)=f(tp); parameter: D=tp/T
Target Data Sheet
5
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Target Data Sheet
6
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
12 Forward characteristics of reverse diode
11 Typ. capacitances
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Target Data Sheet
7
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(Tj); ID=1 mA
Target Data Sheet
8
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Target Data Sheet
9
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Target Data Sheet
10
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
Target Data Sheet
11
0.2, 2010-07-28
OptiMOS™ Power-MOSFET
BSB008NE2LX
Revision History
9
Revision History
Revision History: 2010-07-28, 0.2
Previous Revision:
Revision Subjects (major changes since last revision)
0.2
Release of Target data sheet
t
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2010-07-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Target Data Sheet
12
0.2, 2010-07-28
相关型号:
BSB008NE2LXXUMA1
Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
INFINEON
BSB013NE2LXIXUMA1
Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-3
INFINEON
BSB014N04LX3GXUMA1
Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
INFINEON
BSB015N04NX3GXUMA1
Power Field-Effect Transistor, 35A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明