BSB014N04LX3GXUMA1 [INFINEON]
Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3;型号: | BSB014N04LX3GXUMA1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 开关 脉冲 晶体管 |
文件: | 总13页 (文件大小:1492K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
n-Channel Power MOSFET
OptiMOS™
BSB014N04LX3 G
Data Sheet
2.3, 2011-05-24
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
1
Description
OptiMOS™40V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 40V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
•
•
•
Optimized for high switching frequency DC/DC converter
100% avalanche tested
Excellent gate charge x RDS(on) product (FOM)
Qualified according to JEDEC1) for target applications
Pb-free plating; RoHS compliant
Very low on-resistance RDS(on)
Low profile (<0.7 mm)
Low parasitic inductance
Double.sided cooling
Compatible with DirectFET® package MX footprint and outline
100% Rg Tested
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Parameter
VDS
Key Performance Parameters
Value
40
Unit
Related Links
V
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
RDS(on),max
1.4
mΩ
A
ID
180
89
QOSS
nC
Qg.typ
148
Type
Package
MG-WDSON-2
Marking
BSB014N04LX3 G
0104
1) J-STD20 and JESD22
Final Data Sheet
1
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
ID
-
-
180
128
36
A
VGS=10 V, TC=25 °C
V
GS=10 V, TC=100 °C
V
R
GS=10 V, TA=25 °C,
thJA=45 K/W1)
Pulsed drain current2)
ID,pulse
IAS
-
-
-
-
-
-
400
50
TC=25 °C
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
-
EAS
VGS
Ptot
-
260
20
mJ
V
ID=50 A,RGS=25 Ω
-20
-
Power dissipation
89
W
TC=25 °C
2.8
150
TA=25 °C, RthJA=45 K/W
Operating and storage temperature Tj,Tstg
-40
55
-
°C
IEC climatic category; DIN IEC 68-1
1) J-STD22 and JESD22
150 56
Ncm
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
-
Thermal resistance, junction - case RthJC
RthJA
-
1.0
°K/W bottom
1.4
45
top
Device on PCB
-
-
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical in still air.
Final Data Sheet
2
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Symbol
Parameter
Values
Unit
V
Note / Test Condition
Min.
Drain-source breakdown voltage V(BR)DSS 40
Typ.
Max.
-
-
VGS=0 V, ID=1.0 mA
VDS=VGS, ID=250 µA
Gate threshold voltage
VGS(th)
IDSS
1.2
-
-
2
Zero gate voltage drain current
0.1
10
µA
VDS=40 V, VGS=0 V,
Tj=25 °C
-
10
100
VDS=40 V, VGS=0 V,
Tj=125 °C
Gate-source leakage current
IGSS
-
10
100
2
nA
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=25A
VGS=10 V, ID=30 A
Drain-source on-state resistance RDS(on)
-
1.6
1.2
0.5
130
mΩ
-
1.4
1.0
Gate resistance
RG
gfs
0.2
65
Ω
Transconductance
S
|VDS|>2|ID|RDS(on)max
ID=30 A
,
Table 5
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
12700
2400
140
12
Max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
16900
pF
ns
VGS=0 V, VDS=20 V,
f=1 MHz
3200
-
-
-
-
-
VDD=20V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
8.4
Turn-off delay time
Fall time
td(off)
tf
60
10
Final Data Sheet
3
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
Table 6
Gate charge characteristics1)
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
33
-
nC
VDD=20 V,
ID=30 A,
VGS=0 to 10 V
Qg(th)
Qgd
Qsw
Qg
19
-
15
-
29
-
Gate charge total
148
2.8
71
196
-
Gate plateau voltage
Gate charge total
Vplateau
Qg
V
95
nC
VDD=20 V,
ID=30 A,
VGS=0 to 4.5V
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
139
89
VDS=0.1 V,
VGS=0 to 10 V
VDD=20 V, VGS=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
81
Diode continuous forward current Is
A
TC=25 °C
Diode pulse current
IS,pulse
400
1.1
Diode forward voltage
VSD
-
-
0.77
-
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
50
nC
VR=15 V, IF=Is,
diF/dt=400 A/µs
Final Data Sheet
4
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
4 Max. transient thermal impedance
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Z(thJC)=f(tp); parameter: D=tp/T
Final Data Sheet
5
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
12 Forward characteristics of reverse diode
11 Typ. capacitances
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
9
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
10
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Package outlines
8
Package outlines
Figure 3
Outlines MG-WDSON-2, dimensions in mm/inches
9
Marking layout
Final Data Sheet
11
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Revision History
9
Revision History
Revision History: 2011-05-24, 2.3
Previous Revision:
Revision Subjects (major changes since last revision)
0.1
2.2
2.3
Release of target data sheet
DirectFET Disclaimer Expired
Insert Marking Layout
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Edition 2011-05-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
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user or other persons may be endangered.
Final Data Sheet
12
2.3, 2011-05-24
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