BSB012N03LX3G [INFINEON]
OptiMOS3 Power-MOSFET; OptiMOS3功率MOSFET
| 型号： | BSB012N03LX3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS3 Power-MOSFET |
| 文件： | 总11页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSB012N03LX3 G
OptiMOSTM3 Power-MOSFET
Product Summary
Features
V DS
30
1.2
180
V
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
R DS(on),max
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
MG-WDSON-2
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package MX footprint and outline 1)
• Qualified according to JEDEC2) for target applications
Type
Package
Outline
Marking
BSB012N03LX3 G
MG-WDSON-2
MX
0103
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
180
Parameter
Symbol Conditions
Unit
I D
V
V
GS=10 V, T C=25 °C
Continuous drain current
A
GS=10 V, T C=100 °C
139
V
R
GS=10 V, T A=25 °C,
thJA=45 K/W
39
Pulsed drain current3)
I D,pulse
I AS
T C=25 °C
400
40
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=40 A, R GS=25 Ω
290
±20
mJ
V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 1
2009-11-17
BSB012N03LX3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
89
W
T A=25 °C,
2.8
R
thJA=45 K/W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-40….150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
1.0
K/W
top
-
-
1.4
45
6 cm2 cooling area5)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
30
1
-
-
-
V
DS=V GS, I D=250 µA
2.2
V
DS=30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
10
µA
T j=25 °C
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=25 A
GS=10 V, I D=30 A
Gate-source leakage current
-
-
10
1.4
1.0
0.5
100 nA
R DS(on)
Drain-source on-state resistance
1.8
1.2
1.0
mΩ
-
R G
g fs
Gate resistance
0.2
Ω
|V DS|>2|I D|R DS(on)max
I D=30 A
,
Transconductance
70
140
-
S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2009-11-17
BSB012N03LX3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
12700
3300
200
7.9
16900 pF
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
4400
-
f =1 MHz
-
-
-
-
ns
8.6
V
DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
47
8.4
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
26
16
13
24
61
2.7
-
-
nC
Q g(th)
Q gd
-
V
V
DD=15 V, I D=30 A,
GS=0 to 4.5 V
Q sw
-
Q g
Gate charge total
81
-
V plateau
Gate plateau voltage
V
V
V
DD=15 V, I D=30 A,
GS=0 to 10 V
Q g
Gate charge total
-
127
169
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
53
85
-
-
nC
GS=0 to 4.5 V
V
DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
89
A
T C=25 °C
I S,pulse
400
V
GS=0 V, I F=30 A,
V SD
Q rr
Diode forward voltage
-
-
0.77
-
-
V
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
50
nC
6)
Rev. 2.1
page 3
2009-11-17
BSB012N03LX3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
100
90
80
70
60
50
40
30
20
10
200
160
120
80
40
0
0
0
40
80
120
160
0
40
80
120
160
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100
100 µs
0.5
0.2
DC
1 ms
0.1
101
10-1
10 ms
0.05
0.02
0.01
100
10-2
single pulse
10-1
10-3
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t
p [s]
Rev. 2.1
page 4
2009-11-17
BSB012N03LX3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
4
800
5 V
4.5 V
720
640
560
480
400
320
240
160
80
3
4 V
3.2 V
10 V
3.5 V
2
1
4 V
4.5 V
5 V
3.5 V
3.2 V
7 V
10 V
3 V
2.8 V
0
0
0
10
20
30
40
50
0
1
2
3
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
400
320
240
160
400
360
320
280
240
200
160
120
80
80
150 °C
40
25 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
V
GS [V]
I
D [A]
Rev. 2.1
page 5
2009-11-17
BSB012N03LX3 G
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS; I D=250 µA
9 Drain-source on-state resistance
R
DS(on)=f(T j); I D=30 A; V GS=10 V
V
2
1.8
1.6
2.5
2
98 %
1.4
1.2
1.5
1
typ
1
0.8
0.6
0.4
0.2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
1000
25 °C
150 °C, 98%
104
103
102
101
Ciss
100
10
Coss
150 °C
25 °C, 98%
Crss
1
0
10
20
30
0.0
0.5
1.0
SD [V]
1.5
2.0
V
DS [V]
V
Rev. 2.1
page 6
2009-11-17
BSB012N03LX3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
15 V
10
8
6 V
25 °C
24 V
100 °C
125 °C
10
6
4
2
1
1
0
0
10
100
1000
50
100
150
t
AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.1
page 7
2009-11-17
BSB012N03LX3 G
Package Outline
Rev. 2.1
page 8
2009-11-17
BSB012N03LX3 G
Package Outline
MG-WDSON-2
Dimensions in mm
Rev. 2.1
page 9
2009-11-17
BSB012N03LX3 G
Dimensions in mm
Recommended stencil thickness 150 µm
Rev. 2.1
page 10
2009-11-17
BSB012N03LX3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 11
2009-11-17
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