BSB013NE2LXI [INFINEON]

n-Channel Power MOSFET; N沟道功率MOSFET


型号：	BSB013NE2LXI
厂家：	Infineon
描述：	n-Channel Power MOSFET N沟道功率MOSFET
文件：	总13页 (文件大小：1527K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

n-Channel Power MOSFET

OptiMOS™

BSB013NE2LXI

Data Sheet

2.0, 2011-03-18

Final

Industrial & Multimarket

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Description

OptiMOS™25V products are class leading power MOSFETs for highest power

density and energy efficient solutions. Ultra low gate and output charges together

with lowest on state resistance in small footprint packages make OptiMOS™ 25V

the best choice for the demanding requirements of voltage regulator solutions in

Servers, Datacom and Telecom applications. Super fast switching Control FETs

together with low EMI Sync FETs provide solutions that are easy to design in.

OptiMOS™ products are available in high performance packages to tackle your

most challenging applications giving full flexibility in optimizing space, efficiency

and cost. OptiMOS™ products are designed to meet and exceed the energy

efficiency and power density requirements of the sharpened next generation

voltage regulation standards in computing applications.

Features

•

Optimized SyncFET for high performance buck converters

100% avalanche tested

Qualified according to JEDEC¹⁾for target applications

Integrated monolithic Schottky like diode

Pb-free plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Double.sided cooling

Compatible with DirectFET® package MX footprint and outline²⁾

100% Rg Tested

Low profile (<0.7 mm)

Applications

•

On board power for server

Power managment for high performance computing

Synchronous rectification

High power density point of load converters

Table 1

Parameter

V_DS

Key Performance Parameters

Value

Unit

Related Links

IFX OptiMOS webpage

IFX OptiMOS product brief

IFX OptiMOS spice models

IFX Design tools

R_DS(on),max

1.3

163

mΩ

I_D

Q_OSS

Q_g._typ

Type

Package

MG-WDSON-2

Marking

BSB013NE2LXI

02E2

1) J-STD20 and JESD22

2) CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET ® is a registered

trademark of International Rectifier Corporation.

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

I_D

163

103

V_GS=10 V, T_C=25 °C

_GS=10 V, T_C=100 °C

_GS=10 V, T_A=25 °C,

_thJA=45 K/W)¹⁾

Pulsed drain current²⁾

I_D,pulse

I_AS

400

T_C=25 °C

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

Gate source voltage

E_AS

V_GS

P_tot

130

I_D=40 A,R_GS=25 Ω

-20

Power dissipation

T_C=25 °C

2.8

150

T_A=25 °C, R_thJA=45 K/W

Operating and storage temperature T_j,T_stg

-40

°C

IEC climatic category; DIN IEC 68-1

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.

PCB is vertical in still air

2) See figure 3 for more detailed information

3) See figure 13 for more detailed information

Thermal characteristics

Table 3

Thermal characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Thermal resistance, junction - case R_thJC

R_thJA

1.0

°K/W bottom

top

2.2

Device on PCB

6 cm²cooling area¹⁾

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.

PCB is vertical in still air.

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

Drain-source breakdown voltage V_(BR)DSS25

Typ.

Max.

V_GS=0 V, I_D=10 mA

Breakdown voltage temperature dV_(BR)DSS

mV/K I_D=10 mA, reference to

coefficien

/dT_j

25°C

Gate threshold voltage

Zero gate voltage drain current

V_GS(th)

I_DSS

2.2

V_DS=V_GS, I_D=250 µA

500

µA

V_DS=20 V, V_GS=0 V,

T_j=25 °C

V_DS=20 V, V_GS=0 V,

T_j=125 °C

Gate-source leakage current

I_GSS

100

1.8

1.3

V_GS=20 V, V_DS=0 V

V_GS=4.5 V, I_D=30A

V_GS=10 V, I_D=30 A

Drain-source on-state resistance R_DS(on)

1.4

1.1

0.6

170

mΩ

Gate resistance

R_G

g_fs

Transconductance

|V_DS|>2|I_D|_RDS(on)max

I_D=30 A

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

4400

1900

190

5.4

Max.

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C_iss

C_oss

C_rss

t_d(on)

t_r

V_GS=0 V, V_DS=12 V,

f=1 MHz

V_DD=12V, V_GS=10 V,

I_D=30 A, R_G= 1.6 Ω

6.4

Turn-off delay time

Fall time

t_d(off)

t_f

4.8

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics

Table 6

Gate charge characteristics¹⁾

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q_gs

10.5

7.1

7.3

10.7

V_DD=12 V,

I_D=30 A,

V_GS=0 to 4.5 V

Q_g(th)

Q_gd

Q_sw

Q_g

Gate charge total

Gate plateau voltage

Gate charge total

V_plateau

Q_g

2.4

V_DD=12 V,

I_D=30 A,

V_GS=0 to 10V

Gate charge total, sync. FET

Output charge

Q_g(sync)

Q_oss

V_DS=0.1 V,

V_GS=0 to 4.5 V

V_DD=12 V, V_GS=0 V

1) See figure 16 for gate charge parameter definition

Table 7

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode continuous forward current I_s

T_C=25 °C

Diode pulse current

I_S,pulse

228

0.7

Diode forward voltage

V_SD

0.55

V_GS=0 V, I_F=12 A,

T_j=25 °C

Reverse recovery charge

Q_rr

V_R=15 V, I_F=I_s,

di_F/dt=400 A/µs

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics diagrams

Table 8

1 Power dissipation

2 Drain current

P_tot= f(T_C)

I_D=f(T_C); parameter:V_GS

Table 9

3 Safe operating area T_C=25 °C

4 Max. transient thermal impedance

I_D=f(V_DS); T_j=25 °C; D=0; parameter: T_p

Z_(thJC)=f(t_p); parameter: D=t_p/T

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics diagrams

Table 10

5 Typ. output characteristics T_C=25 °C

6 Typ. drain-source on-state resistance

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

R_DS(on)=f(I_D); T_j=25 °C; parameter: V_GS

Table 11

7 Typ. transfer characteristics

8 Typ. forward transconductance

I_D=f(VGS); |V_DS|>2|I_D|R_DS(on)max

g_fs=f(I_D); T_j=25 °C

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics diagrams

Table 12

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_DS(on)=f(T_j); I_D=30 A; V_GS=10 V

V_GS(th)=f(T_j); V_GS=V_DS; I_D=10 mA

Table 13

12 Forward characteristics of reverse diode

11 Typ. capacitances

C=f(V_DS); V_GS=0 V; f=1 MHz

I_F=f(V_SD); parameter: T_j

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics diagrams

Table 14

13 Avalanche characteristics

14 Typ. gate charge

I_AS=f(t_AV); R_GS=25 Ω; parameter: T_j(start)

V_GS=f(Q_gate); I_D=30 A pulsed; parameter: V_DD

Table 15

15 Typ drain-source leakage current

16 Gate charge waveforms

I_DSS=f(V_DS); V_GS=0 V

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Package outlines

Figure 1

Outlines MG-WDSON-2, dimensions in mm/inches

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Package outlines

Figure 2

Outlines MG-WDSON-2, dimensions in mm/inches

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Package outlines

Figure 3

Outlines MG-WDSON-2, dimensions in mm/inches

Final Data Sheet

2.0, 2011-03-18

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Revision History

Revision History: 2011-03-18, 2.0

Previous Revision:

Revision Subjects (major changes since last revision)

0.1

2.0

Release of target data sheet

Release Final version

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2011-03-18

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written approval

of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that

life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that

device or system. Life support devices or systems are intended to be implanted in the human body or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the

user or other persons may be endangered.

Final Data Sheet

2.0, 2011-03-18

BSB013NE2LXI [INFINEON]

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