BSB008NE2LXXUMA1 [INFINEON]
Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN;
| 型号： | BSB008NE2LXXUMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：1458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOSTM
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
CanPAKꢀMX-size
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀOptimizedꢀforꢀe-fuseꢀandꢀOR-ingꢀapplication
•ꢀUltraꢀlowꢀRdsonꢀinꢀCanPAK-MXꢀfootprint
•ꢀLowꢀprofileꢀ(<0.7ꢀmm)
•ꢀ100%ꢀavalancheꢀtested
•ꢀ100%ꢀRgꢀTested
•ꢀDouble-sidedꢀcooling
•ꢀCompatibleꢀwithꢀDirectFET®ꢀpackageꢀMXꢀfootprintꢀandꢀoutlineꢀ1)ꢀ
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC2)ꢀꢀforꢀtargetꢀapplications
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Source
VDS
25
V
RDS(on),max
ID
0.8
mΩ
A
180
74
Qoss
nC
nC
Qg(0V..10V)
258
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSB008NE2LX
MG-WDSON-2
04E2
-
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
-
-
-
-
-
-
180
165
46
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=45ꢀK/W
Continuous drain current
ID
A
Pulsed drain current1)
ID,pulse
IAS
-
-
-
-
-
400
40
A
TC=25ꢀ°C
Avalanche current, single pulse2)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
600
20
mJ
V
ID=40ꢀA,ꢀRGS=25ꢀΩ
-20
-
-
-
-
-
89
2.8
TC=25ꢀ°C
TA=25ꢀ°C,ꢀRthJA=45ꢀK/W
Power dissipation
Ptot
W
IEC climatic category;
DIN IEC 68-1: 40/150/56
Operating and storage temperature
Tj,ꢀTstg
-40
-
150
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
1.0
-
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
1.4
45
Device on PCB,
6 cm2 cooling area3)
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
25
Typ.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
10
100
VDS=25ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=25ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
0.75
0.6
1.0
0.8
VGS=4.5ꢀV,ꢀID=25ꢀA
VGS=10ꢀV,ꢀID=30ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
0.3
0.5
1.0
-
Ω
-
Transconductance
120
240
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
12000 16000 pF
3800 5100 pF
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
3300
12.6
-
-
pF
ns
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
47.2
75
-
-
-
ns
ns
ns
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
32.4
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
27
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
36
-
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
19
73
110
-
Qsw
81
Gate charge total
Qg
146
2.2
258
88
194
-
Gate plateau voltage
Gate charge total
Vplateau
Qg
343
-
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
74
98
VDD=12ꢀV,ꢀVGS=0ꢀV
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
Typ.
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
89
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
400
A
TC=25ꢀ°C
Diode forward voltage
0.78
20
-
-
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
200
160
120
80
90
80
70
60
50
40
30
20
10
0
40
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
100 µs
1 ms
100
0.5
0.2
0.1
10 ms
101
DC
10-1
0.05
100
10-1
10-2
0.02
0.01
10-2
single pulse
10-3
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
1.5
10 V
5 V
700
4.5 V
3.2 V
4 V
600
3.2 V
1.0
500
400
300
200
100
0
3.5 V
4 V
3 V
4.5 V
5 V
7 V
10 V
2.8 V
0.5
0.0
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
600
500
400
300
200
100
0
320
240
160
150 °C
25 °C
80
0
0
1
2
3
4
5
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
typ
0.6
0.4
0.2
0.0
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
150 °C
Ciss
104
103
102
102
101
100
Coss
Crss
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
9
8
7
6
5
4
3
2
1
0
5 V
12 V
25 °C
20 V
100 °C
125 °C
101
100
100
101
102
103
0
50
100
150
200
250
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
28
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀMG-WDSON-2,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀCanPAKꢀMX,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀBoardpadsꢀandꢀaperturesꢀCanPAKꢀMX,ꢀdimensionsꢀinꢀmm
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
RevisionꢀHistory
BSB008NE2LX
Revision:ꢀ2015-01-20,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-01-20
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-01-20
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