BGSX22G5A10 [INFINEON]
天线相关器件;
Infineon 
BGSX22G5A10
DPDT Antenna Cross Switch
Features
• RF CMOS DPDT antenna cross switch with power handling capability of
up to 37 dBm
• Suitable for multi-mode LTE and WCDMA multi antenna applications
• Ultra-low insertion loss and harmonics generation
• 0.1 to 6.0 GHz coverage
• High port-to-port-isolation
• No decoupling capacitors required if no DC applied on RF lines
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.1mm x 1.5mm
1.1x1.5mm2
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
RF2
RF4
RF1
RF3
DPDT
VDD
GPIO
CTRL
Controller
GND
Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Table of Contents
Table of Contents
Table of Contents
1
2
1
Features
2
3
4
5
6
7
Maximum Ratings
Operation Ranges
RF Characteristics
Modes of Operation
Application Information
Package Information
3
4
5
9
9
10
Data Sheet
1
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Features
1 Features
•
RF CMOS DPDT antenna cross switch with power handling capability of
up to 37 dBm
• Suitable for multi-mode LTE and WCDMA multi antenna applications
• Ultra-low insertion loss and harmonics generation
• 0.1 to 6.0 GHz coverage
• High port-to-port-isolation
• No decoupling capacitors required if no DC applied on RF lines
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.1mm x 1.5mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
Description
The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT oꢀers low
insertion loss and low harmonic generation paired with high isolation between RF ports.
The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking
capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in
Infineon’s patented MOS technology, oꢀering the performance of GaAs with the economy and integration of conventional
CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum
thickness of 0.55mm.
Product Name
Marking
Package
BGSX22G5A10
X5
ATSLP-10-50
ATSLP-10-2
Data Sheet
2
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings Table at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.1
-0.5
-55
–
Typ.
Max.
6.0
3.6
150
125
39
1)
Frequency Range
f
–
–
–
–
–
–
–
–
GHz
V
Supply voltage2)
VDD
–
Storage temperature range
Junction temperature
RF input power at all RF ports
ESD capability, CDM3)
ESD capability, HBM4)
ESD capability, system level5)
TSTG
◦C
–
Tj
◦C
–
PRF
–
dBm
kV
VSWR 1:1, 12.5% Duty Cycle
VESD_CDM
VESD_HBM
VESD_RF
-1
+1
-1
+1
kV
-8
+8
kV
RF versus system GND, with
27 nH
–
Thermal resistance junction - RthJS
soldering point
–
–
–
–
60
0
K/W
V
Maximum DC-voltage on RF- VRFDC
Ports and RF-Ground
0
No DC voltages allowed on RF-
Ports
–
GPIO control voltage levels
VCtrlx
-0.7
VDD+0.7
(max.
3.6V)
V
1)Switch has a lowpass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports
VRFDC has to be 0V.
2)Note: Consider potential ripple voltages on top of VDD. Including RF ripple, VDD must not exceed the maximum ratings: VDD
high pulse voltages at VDD pin will cause the ESD structure to trigger.
= VDC + VRipple. Furthermore,
3)Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4)Human Body Model ANSI/ESDA/JEDEC JS-001 (R=1,5 kΩ, C=100 pF).
5)IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
3
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Operation Ranges
3 Operation Ranges
Table 2: Operation Ranges at TA = −40 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65V ... 3.4V, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.65
–
Typ.
–
Max.
3.4
Supply voltage
VDD
V
–
–
–
Supply current
IDD
55
–
200
µA
V
GPIO control voltage high
VCtrl_H
1.35
VDD + 0.3
(max.
3.6V)
0.45
2
GPIO control voltage low
VCtrl_L
-0.3
–
–
V
–
–
–
GPIO control input capacitance CCtrl
–
pF
◦C
Ambient temperature
TA
-40
25
85
Table 3: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
–
Max.
37
RF input power
PRF
dBm
VSWR 1:1, 12.5% Duty Cycle
Data Sheet
4
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
RF Characteristics
4 RF Characteristics
Table 4: RF Characteristics at TA = 25 ◦C, PIN = 0 dBm, Supply Voltage VDD = 2.8V, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Insertion Loss1)
–
–
–
–
–
–
0.28
0.37
0.45
0.60
0.80
1.10
0.35
0.5
0.6
1.0
1.2
1.5
dB
dB
dB
dB
dB
dB
699 to 960MHz
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
All RF ports
IL
Return Loss1)
19
15
14
12
10
7
24
17
16
15
13
10
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
All RF ports
RL
1)Measured on application board without any external matching components.
Table 5: RF Characteristics at TA = −40 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65
V
... 3.4V, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Insertion Loss1)
–
–
–
–
–
–
0.28
0.37
0.45
0.60
0.80
1.10
0.4
0.6
0.7
1.1
1.3
1.7
dB
dB
dB
dB
dB
dB
699 to 960MHz
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
All RF ports
IL
Return Loss1)
19
14
13
10
9
24
17
16
15
13
10
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
All RF ports
RL
6
1)Measured on application board without any external matching components.
Data Sheet
5
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
RF Characteristics
Table 6: RF Characteristics at TA = −40 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65
V ... 3.4V, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Isolation1)
47
41
39
37
36
34
49
43
41
39
39
38
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
State 1
RF1-RF3, RF2-RF4
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
ISO
Isolation1)
41
35
33
31
31
33
44
37
35
33
33
35
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
State 2
RF1-RF3, RF2-RF4
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
ISO
ISO
ISO
Isolation1)
56
49
48
44
41
58
52
50
49
46
43
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
State 1
RF1-RF4, RF3-RF2
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
38
Isolation1)
39
32
31
28
28
29
41
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699 to 960MHz
State 2
RF1-RF2, RF3-RF4
34
33
30
29
31
1710 to 2200MHz
2300 to 2690MHz
3300 to 4200MHz
4400 to 5000MHz
5150 to 5925MHz
Harmonic Generation
H2
H3
–
–
–
–
–
–
-85
-90
-70
-60
-70
-60
-65
-75
-55
-55
-55
-55
dBm
dBm
dBm
dBm
dBm
dBm
25 dBm, 50 Ω, CW mode
25 dBm, 50 Ω, CW mode
35 dBm, 50 Ω, 50% duty cycle
35 dBm, 50 Ω, 50% duty cycle
33 dBm, 50 Ω, 50% duty cycle
33 dBm, 50 Ω, 50% duty cycle
H2, GSM LB
H3, GSM LB
H2, GSM HB
H3, GSM HB
P
Harm
Intermodulation Distortion IMD2
IIP2, low
IIP2, high
IIP2,l
IIP2,h
110
110
125
130
–
–
dBm
dBm
IIP2 conditions, Tab. 7
IIP3 conditions, Tab. 8
Intermodulation Distortion IMD3
IIP3
IIP3
65
80
–
dBm
1)Measured on application board without any external matching components.
Data Sheet
6
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
RF Characteristics
Table 7: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
2140
880
[MHz]
1950
1950
835
[dBm]
24
[MHz]
190
[dBm]
-10
Band 1 Low
Band 1 High
Band 5 High
Band 7 Low
Band 7 High
24
4090
1715
120
-10
24
-10
2655
2655
2535
2535
24
-10
24
5190
-10
Table 8: IIP3 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
2140
2140
880
[MHz]
1950
1950
1950
835
[dBm]
24
[MHz]
95
[dBm]
-10
Band 1 Low
Band 1 Mid
Band 1 High
Band 5 Low
Band 5 Mid
Band 5 High
Band 7 Low
Band 7 Mid
Band 7 High
24
1760
6040
22.5
790
-10
24
-10
24
-10
880
835
24
-10
880
835
24
2550
60
-10
2655
2655
2655
2535
2535
2535
24
-10
24
2415
7725
-10
24
-10
Data Sheet
7
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
RF Characteristics
Table 9: Switching Time at TA = 25 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65V ... 3.4V, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Switching Time
RF Rise Time
tRT
tST
–
–
–
3
1
µs
µs
10 % to 90 % RF signal
Switching Time
4
50 % Ctrl signal to 90 % RF signal
50 % Ctrl signal to 90 % RF signal, Supply
Voltage V = 2.6 V ... 3.4 V
DD
Switching Time
tST
–
–
2
3
µs
µs
Power Up Settling Time
tPup
10
25
Aꢁer power down mode
VDD
t Pup
CTRL
t ST
90%
RF Signal
Figure 1: Power Up Settling Time and Switching Time
VDD
CTRL
RF Signal
Ac�ve
Close-down
Start-up
Figure 2: Power On and Oꢀ Sequence
Data Sheet
8
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Application Information
5 Modes of Operation
Table 10: Modes of Operation (Truth Table)
Control Input
CTRL
State
Mode
RF1 - RF2
RF3 - RF4
RF1 - RF4
RF3 - RF2
1
0
1
2
6 Application Information
Pin Configuration and Function
ꢌꢍꢎ
ꢃ
ꢊꢋꢅ
ꢌꢍꢎ
ꢊꢋꢄ
ꢊꢋꢇ
ꢂ
ꢁ
ꢄ
ꢅ
ꢌꢍꢎ
ꢀ
ꢉ
ꢊꢋꢆ
ꢆ
ꢇ
ꢐꢑꢊꢒ
ꢇꢈ
ꢌꢍꢎ
ꢏꢎꢎ
Figure 3: BGSX22G5A10 Pin Configuration (top view)
Table 11: Pin Definition and Function
Pin No.
1
Name
GND
RF4
Function
DC ground
RF port 4
RF ground
RF port 3
RF ground
RF port 1
2
3
4
5
6
7
8
9
10
GND
RF3
GND
RF1
GND
RF2
RF ground
RF port 2
CTRL
VDD
GPIO control pin
Power supply
Data Sheet
9
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Package Information
7 Package Information
Table 12: Mechanical Data
Parameter
X-Dimension
Y-Dimension
Size
Symbol
X
Value
Unit
mm
mm
mm2
mm
1.1 ± 0.1
1.5 ± 0.1
1.65
Y
Size
H
Height
0.55 ± 0.1
BOTTOM VIEW
1.1±01.
0.2±0.05
10x
0.1 A
A
5
6
4
3
2
1
7
8
9
10
0.4
0.55±0.1
INDEX MARKING
(LASERED)
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 4: ATSLP-10-50/-2 Package Outline (top, side and bottom views)
Figure 5: Footprint Recommendation
Data Sheet
10
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Package Information
PIN 1 MARKING
DATE CODE
(YEAR/WEEK)
TYPE
Figure 6: Marking Specification (top view): Date code digits Y and W defined in Table 13/14
PIN 1 MARKING
DATE CODE
(YEAR/WEEK)
TYPE
Figure 7: ATSLP-10-2 Marking Specification (top view): Date code digits Y and W defined in Table 13/14
Data Sheet
11
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Package Information
Table 13: Year date code marking - digit "Y"
Year
"Y"
0
1
2
3
4
5
6
7
8
9
Year
"Y"
0
1
2
3
4
5
6
7
8
9
Year
"Y"
0
1
2
3
4
5
6
7
8
9
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
2033
2034
2035
2036
2037
2038
2039
Table 14: Week date code marking - digit "W"
Week
"W"
A
B
C
D
E
Week
12
13
14
15
16
17
18
19
"W"
N
P
Q
R
S
T
U
V
W
Y
Week
23
24
25
26
27
28
29
30
31
32
33
"W"
4
5
6
7
a
b
c
d
e
f
Week
34
35
36
37
38
39
40
41
42
43
"W"
h
j
k
l
n
p
q
r
Week
45
46
47
48
49
50
51
"W"
v
x
y
z
8
9
2
3
1
2
3
4
5
6
7
8
9
10
11
F
G
H
J
K
L
52
53
20
21
22
s
t
u
M
Z
g
44
Data Sheet
12
Revision 8.6
2020-04-15
BGSX22G5A10
DPDT Antenna Cross Switch
Package Information
4
PIN 1 MARKING
(LASERED)
4
0.75
0.2
0.95
1.3
All dimensions are in units mm
The drawing is in compliance with ISO 128-30, Projection Method 1 [
]
Figure 8: ATSLP-10-50 Carrier Tape
ꢌ
ꢊꢀꢁ ꢋ
ꢌ
ꢍꢎꢏꢐ
ꢀꢁꢂꢃꢄ ꢅꢆꢇꢈꢀꢁꢉ
ꢋꢎꢑ
ꢆꢓꢓ ꢂꢀꢅꢃꢁꢔꢀꢕꢁꢔ ꢆꢇꢃ ꢀꢁ ꢖꢁꢀꢗꢔ ꢅꢅ
ꢗꢘꢃ ꢂꢇꢆꢙꢀꢁꢉ ꢀꢔ ꢀꢁ ꢚꢕꢅꢊꢓꢀꢆꢁꢚꢃ ꢙꢀꢗꢘ ꢀꢔꢕ ꢋꢛꢒ ꢜ ꢊꢇꢕꢝꢃꢚꢗꢀꢕꢁ ꢅꢃꢗꢘꢕꢂ ꢋ ꢞ
ꢟ
Figure 9: ATSLP-10-2 Carrier Tape
Data Sheet
13
Revision 8.6
2020-04-15
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 8.6, 2020-04-15
all
New template
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Theinformationgiveninthisdocumentshallinnoevent For further information on technology, delivery terms
Edition 2020-04-15
Published by
Infineon Technologies AG
81726 Munich, Germany
be regarded as a guarantee of conditions or characteris- and conditions and prices, please contact the nearest
tics ("Beschaꢀenheitsgarantie"). With respect to any ex- Infineon Technologies Oꢀice (www.infineon.com).
amples, hints or any typical values stated herein and/or
any information regarding the application of the prod-
uct, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without
limitationwarrantiesofnon-infringementofintellectual
property rights of any third party. In addition, any infor-
mation given in this document is subject to customer’s
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon Tech-
nologies oꢀice.
c
ꢀ 2020 Infineon Technologies AG.
All Rights Reserved.
compliance with its obligations stated in this document Except as otherwise explicitly approved by Infineon
and any applicable legal requirements, norms and stan- Technologies in a written document signed by autho-
dards concerning customer’s products and any use of rized representatives of Infineon Technologies, Infineon
the product of Infineon Technologies in customer’s ap- Technologies products may not be used in any applica-
plications. The data contained in this document is ex- tionswhereafailureoftheproductoranyconsequences
clusively intended for technically trained staꢀ. It is the of the use thereof can reasonably be expected to result
responsibility of customer’s technical departments to in personal injury.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
evaluate the suitability of the product for the intended
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plication.
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