BGU2003 [NXP]

SiGe MMIC amplifier; 硅锗MMIC放大器
BGU2003
型号: BGU2003
厂家: NXP    NXP
描述:

SiGe MMIC amplifier
硅锗MMIC放大器

放大器
文件: 总8页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BGU2003  
SiGe MMIC amplifier  
Preliminary specification  
2002 May 17  
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
FEATURES  
PINNING  
PIN  
Low current  
DESCRIPTION  
Very high power gain  
1
2
3
4
GND  
RF in  
Low noise figure  
Integrated temperature compensated biasing  
Control pin for adjustment bias current  
Supply and RF output pin combined.  
CTRL (bias current control)  
VS + RF out  
APPLICATIONS  
V +RFout  
S
handbook, halfpage  
CTRL  
3
4
RF front end  
Wideband applications, e.g. analog and digital cellular  
BIAS  
telephones, cordless telephones (PHS, DECT, etc.)  
CIRCUIT  
Low noise amplifiers  
2
1
Satellite television tuners (SATV)  
High frequency oscillators.  
RFin  
GND  
Top view  
MAM427  
DESCRIPTION  
Marking code: A6  
Silicon MMIC amplifier consisting of an NPN double  
polysilicon transistor with integrated biasing for low voltage  
applications in a plastic, 4-pin SOT343R package.  
Fig.1 Simplified outline (SOT343R) and symbol.  
QUICK REFERENCE DATA  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
DC supply current  
CONDITIONS  
RF input AC coupled  
TYP.  
MAX.  
4.5  
UNIT  
V
IS  
VVS-OUT = 2.5 V; ICTRL = 1 mA;  
RF input AC coupled  
10  
18  
1.1  
mA  
dB  
dB  
MSG  
NF  
maximum stable gain  
noise figure  
V
VS-OUT = 2.5 V; f = 1800 MHz;  
T
amb = 25 °C  
VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt  
2002 May 17  
2
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VS  
VCTRL  
IS  
PARAMETER  
supply voltage  
CONDITIONS  
RF input AC coupled  
MIN.  
MAX.  
4.5  
UNIT  
V
V
voltage on control pin  
supply current (DC)  
2
forced by DC voltage on RF input  
or ICTRL  
30  
mA  
ICTRL  
Ptot  
Tstg  
Tj  
control current  
3
mA  
mW  
°C  
total power dissipation  
storage temperature  
operating junction temperature  
Ts 100 °C  
135  
+150  
150  
65  
°C  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to soldering point  
350  
K/W  
CHARACTERISTICS  
RF input AC coupled; Tj = 25 °C; unless otherwise specified.  
SYMBOL  
IS  
PARAMETER  
supply current  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
VVS-OUT = 2.5 V; ICTRL = 0.4 mA  
2.5  
6
4.5  
10  
23  
6.5  
15  
mA  
mA  
dB  
V
VS-OUT = 2.5 V; ICTRL = 1.0 mA  
MSG  
maximum stable gain  
insertion power gain  
isolation  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz  
18  
19  
14  
26  
20  
1.0  
1.1  
19  
21  
2
2
dB  
2
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz  
18  
13  
dB  
|s21  
s12  
NF  
|
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz  
dB  
VVS-OUT = 2.5 V; IVS-OUT = 0;  
f = 900 MHz  
dB  
V
VS-OUT = 2.5 V; IVS-OUT = 0;  
f = 1800 MHz  
dB  
noise figure  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz; ΓS = Γopt  
dB  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz; ΓS = Γopt  
dB  
IP3(out)  
output intercept point;  
ZS = ZL 50 Ω  
V
VS-OUT = 2.3 V; IVS-OUT = 10 mA;  
f = 900 MHz  
dBm  
dBm  
VVS-OUT = 2.3 V; IVS-OUT = 10 mA;  
f = 1800 MHz  
2002 May 17  
3
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
MGS537  
200  
handbook, halfpage  
P
tot  
(mW)  
100 pF  
handbook, halfpage  
R1  
C
V
S
150  
L1  
4
RF out  
R
CTRL  
100  
50  
V
3
CTRL  
2
1
C
0
0
50  
100  
150  
200  
RF in  
T
(°C)  
MGS536  
s
Fig.2 Typical application circuit.  
Fig.3 Power derating.  
MGS538  
MGS539  
2.5  
30  
handbook, halfpage  
handbook, halfpage  
I
CTRL  
(mA)  
I
VS-OUT  
(mA)  
2
20  
1.5  
1
10  
0.5  
0
0
0
0
0.5  
1
1.5  
2
0.5  
1
1.5  
2
2.5  
I
(mA)  
V
(V)  
CTRL  
CTRL  
VS-OUT = 2.5 V.  
Fig.4 Control current as a function of the control  
voltage on pin 3; typical values.  
Fig.5 Bias current as a function of the control  
current; typical values.  
2002 May 17  
4
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
Scattering parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 °C  
s11  
s21  
s12  
s22  
f (MHz)  
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE  
(ratio)  
(deg)  
(ratio)  
(deg)  
(ratio)  
(deg)  
(ratio)  
(deg)  
100  
200  
0.837  
0.783  
0.713  
0.645  
0.581  
0.519  
0.474  
0.433  
0.397  
0.369  
0.342  
0.320  
0.301  
0.286  
0.273  
0.262  
0.252  
0.241  
0.229  
0.221  
0.216  
0.215  
0.229  
0.237  
0.240  
0.243  
0.243  
0.238  
0.233  
0.224  
10.6  
19.9  
28.4  
36.0  
42.0  
47.1  
50.8  
53.3  
55.2  
56.9  
58.4  
60.2  
62.1  
64.4  
66.7  
68.5  
7.08  
73.7  
77.0  
81.1  
85.5  
88.9  
91.6  
97.0  
99.3  
101.1  
102.9  
104.9  
106.8  
109.0  
19.216  
17.589  
16.321  
15.046  
13.701  
12.709  
11.602  
10.631  
9.791  
8.951  
8.314  
7.730  
7.275  
6.912  
6.493  
6.078  
5.783  
5.475  
5.289  
5.094  
4.911  
4.779  
4.588  
4.446  
4.325  
4.145  
4.105  
4.038  
3.924  
3.795  
163.9  
151.7  
142.4  
134.5  
127.7  
121.6  
116.8  
112.6  
108.8  
106.0  
103.6  
101.1  
99.4  
0.007  
0.012  
0.018  
0.022  
0.027  
0.031  
0.034  
0.038  
0.042  
0.046  
0.050  
0.055  
0.058  
0.063  
0.066  
0.071  
0.074  
0.078  
0.083  
0.088  
0.092  
0.098  
0.104  
0.107  
0.111  
0.115  
0.121  
0.124  
0.129  
0.132  
77.3  
77.2  
76.7  
72.9  
75.2  
74.8  
75.0  
75.3  
76.3  
76.1  
77.3  
77.6  
78.4  
78.1  
78.2  
78.9  
78.9  
79.8  
79.7  
79.5  
79.4  
79.6  
78.7  
78.6  
79.1  
80.1  
80.4  
80.4  
80.3  
80.0  
0.976  
0.920  
0.861  
0.805  
0.759  
0.718  
0.689  
0.664  
0.644  
0.627  
0.610  
0.599  
0.591  
0.583  
0.578  
0.572  
0.564  
0.553  
0.543  
0.530  
0.518  
0.512  
0.515  
0.515  
0.523  
0.532  
0.537  
0.538  
0.532  
0.519  
7.1  
13.2  
17.1  
19.8  
21.9  
22.8  
23.4  
24.1  
24.4  
25.2  
25.6  
26.4  
27.2  
28.0  
28.6  
29.0  
29.6  
30.0  
30.7  
31.9  
33.6  
35.6  
38.2  
40.7  
42.3  
43.0  
43.3  
43.0  
43.2  
43.1  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
2100  
2200  
2300  
2400  
2500  
2600  
2700  
2800  
2900  
3000  
97.1  
94.8  
93.5  
91.8  
90.9  
89.9  
88.4  
87.2  
85.6  
84.3  
83.8  
82.3  
81.9  
81.6  
80.2  
78.5  
76.7  
Noise parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 °C  
gamma opt.  
f (MHz)  
NFmin (dB)  
Rn / 50 Ω  
MAGNITUDE (ratio)  
ANGLE (deg)  
900  
1800  
2500  
1.0  
1.1  
1.3  
0.19  
0.08  
0.07  
14  
60  
90  
0.16  
0.14  
0.14  
2002 May 17  
5
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
PACKAGE OUTLINE  
Plastic surface mounted package; reverse pinning; 4 leads  
SOT343R  
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
w
M
B
b
b
1
p
p
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4  
0.3  
1.1  
0.8  
0.7  
0.5  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.15  
0.2  
0.2  
0.1  
1.3  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT343R  
97-05-21  
2002 May 17  
6
Philips Semiconductors  
Preliminary specification  
SiGe MMIC amplifier  
BGU2003  
DATA SHEET STATUS  
PRODUCT  
STATUS(2)  
DATASHEETSTATUS(1)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Product data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 May 17  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2001  
SCA73  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125006/04/pp8  
Date of release: 2002 May 17  
Document order number: 9397 750 09849  

相关型号:

BGU6005

Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass
NXP

BGU6005N2

Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass
NXP

BGU6009/N2

RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
NXP

BGU6009/N2X

BGU6009/N2 - Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass SON 6-Pin
NXP

BGU6101

RF Manual 16th edition
NXP

BGU6101,147

BGU6101 - Wideband silicon low-noise amplifier MMIC
NXP

BGU6102

RF Manual 16th edition
NXP

BGU6102,147

BGU6102 - Wideband silicon low-noise amplifier MMIC
NXP

BGU6104

RF Manual 16th edition
NXP

BGU6104,147

BGU6104 - Wideband silicon low-noise amplifier MMIC
NXP

BGU7003

Wideband silicon germanium low-noise amplifier MMIC
NXP

BGU7003W

RF Manual 16th edition
NXP