BGU6101,147 [NXP]
BGU6101 - Wideband silicon low-noise amplifier MMIC;
| 型号： | BGU6101,147 |
| 厂家： | 
NXP |
| 描述： | BGU6101 - Wideband silicon low-noise amplifier MMIC |
| 文件： | 总20页 (文件大小：604K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGU6101
Wideband silicon low-noise amplifier MMIC
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias,
enable function and wide supply voltage. BGU6101 is part of a family of three products
(BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V
Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage
NFmin of 0.8 dB
Applicable between 40 MHz and 4 GHz
Integrated temperature-stabilized bias for easy design
Bias current configurable with external resistor
Power-down mode current consumption < 6 A
ESD protection on all pins up to 3 kV HBM
Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm
1.3 Applications
FM radio
RKE, TPMS
Mobile TV, CMMB
ISM
AMR, ZigBee, Bluetooth
WiFi, WLAN (2.4 GHz)
Low current applications
Wireless security
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE 1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 450 MHz
-
-
-
-
-
-
13.0
12.0
13.0
0.8
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
f = 900 MHz
f = 2400 MHz; ICC(tot) = 3 mA
f = 450 MHz
NFmin
minimum noise figure
f = 900 MHz
0.8
f = 2400 MHz; ICC(tot) = 3 mA
1.3
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 1.
Quick reference data …continued
Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE 1.2 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ
Max Unit
PL(1dB)
output power at 1 dB gain f = 450 MHz
-
-
-
-
-
-
11.0
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
dBm
compression
f = 900 MHz
11.5
6.5
2.5
2.0
6.5
f = 2400 MHz; ICC(tot) = 3 mA
f = 450 MHz
IP3O
output third-order
intercept point
f = 900 MHz
f = 2400 MHz; ICC(tot) = 3 mA
2. Pinning information
2.1 Pinning
1
2
3
6
5
4
Transparent top view
Fig 1. Pin configuration
2.2 Pin description
Table 2.
Symbol
VCC
Pin description
Pin
Description
supply voltage
not connected
RF in
1
n.c.
2
RF_IN
RF_OUT
ENABLE
CUR_ADJ
GND
3
4
RF out
5
enable
6
current adjust
GND
ground pad; RF and DC ground
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
SOT1209
BGU6101
HXSON6
plastic thermal enhanced super thin small outline
package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
2 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
4. Marking
Table 4.
Marking
Type number
Marking
Description
BGU6101
1A*
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VCC supply voltage
VENABLE voltage on pin ENABLE
VRF_IN voltage on pin IN
VRF_OUT voltage on pin RF_OUT
Conditions
Min Max
5.5
Unit
V
RF input, AC coupled
-
[1]
[2]
0.5 VCC + 1.8
0.5 0.9
V
DC
V
DC
0.5 VCC + 0.6
V
ICC(tot)
Tstg
total supply current
storage temperature
junction temperature
VCC = 5.0 V
-
40
mA
C
C
V
55 +150
Tj
-
-
+150
3000
VESD
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
-
500
V
[1] Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in
order to avoid excess current.
[2] The RF input is directly coupled to the base of the RF transistor.
6. Thermal characteristics
Table 6.
Symbol Parameter
Rth(j-sp) thermal resistance from junction to solder point
Thermal characteristics
Conditions
Typ
Unit
110
K/W
BGU6101
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
3 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
7. Static characteristics
Table 7.
Symbol
VCC
Static characteristics
Parameter
Conditions
Min Typ Max Unit
supply voltage
total supply current
RF input, AC coupled
VCC = 3.0 V
1.5
0.9
-
-
-
-
5.0
10
V
[1][2]
[1]
ICC(tot)
mA
VENABLE 0.4 V
0.01 mA
Tamb
ambient temperature
40 +25 +85 C
[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS
.
[2] Configurable with external resistor.
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
4 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
8. Dynamic characteristics
Table 8.
amb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Dynamic characteristics
T
Symbol Parameter
100 MHz frequency
Conditions
Min Typ
Max Unit
s212
MSG
NFmin
insertion power gain
f = 100 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 100 MHz
-
-
-
-
-
10.5
13.0
18.5
22.5
26.5
-
-
-
-
-
dB
dB
dB
dB
dB
maximum stable gain
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 100 MHz
-
-
-
-
-
29.5
31.0
33.5
35.5
38.0
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
0.8
0.8
0.8
0.8
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
PL(1dB) output power at 1 dB gain compression f = 100 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 100 MHz
11.0
6.0
2.0
3.5
-
-
-
-
IP3O
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
5.5
2.5
4.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
9.0
14.0
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
5 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
150 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 150 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 150 MHz
-
-
-
-
-
10.5
13.0
18.5
22.5
26.5
-
-
-
-
-
dB
dB
dB
dB
dB
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 150 MHz
-
-
-
-
-
27.5
29.0
32.0
34.0
36.0
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
0.8
0.8
0.8
0.8
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 150 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 150 MHz
11.0
6.0
2.0
3.0
-
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
5.5
2.5
4.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
9.0
14.0
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
6 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
450 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 450 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 450 MHz
-
-
-
-
-
10.0
13.0
18.5
22.0
25.5
-
-
-
-
-
dB
dB
dB
dB
dB
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 450 MHz
-
-
-
-
-
23.0
24.5
27.0
29.0
31.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
0.8
0.8
0.8
0.8
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 450 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
12.5 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 450 MHz
11.0
6.0
2.5
3.0
-
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
5.5
2.5
4.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
9.0
14.0
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
7 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
900 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 900 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 900 MHz
-
-
-
-
-
9.5
-
-
-
-
-
dB
dB
dB
dB
dB
12.0
17.0
20.5
23.5
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 900 MHz
-
-
-
-
-
20.0
21.5
24.0
26.0
28.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
0.9
0.8
0.8
0.8
0.9
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 900 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
13.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 900 MHz
11.5
6.5
2.5
3.0
-
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
5.0
2.0
5.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
10.0
14.5
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
8 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
1500 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 1500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
8.5
-
-
-
-
-
dB
dB
dB
dB
dB
11.0
15.5
18.5
21.0
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
-
-
-
-
-
18.0
19.5
22.0
24.0
26.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
-
-
-
-
-
1.1
1.0
0.9
0.9
1.0
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 1500 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
13.0 -
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1500 MHz
6.5
2.5
3.5
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
4.5
1.0
6.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
11.0
15.5
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
9 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
1900 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 1900 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1900 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1900 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
7.5
-
-
-
-
-
dB
dB
dB
dB
dB
10.0
14.5
17.0
19.5
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
-
-
-
-
-
17.0
18.5
21.5
23.5
25.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
-
-
-
-
-
1.3
1.2
1.0
1.0
1.1
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 1900 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
13.5 -
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 1900 MHz
6.5
2.0
4.0
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
4.0
1.0
6.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
11.0
16.0
BGU6101
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
10 of 20
BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
2400 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 2400 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 2400 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 2400 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
6.5
-
-
-
-
-
dB
dB
dB
dB
dB
8.5
13.0
15.5
17.5
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
-
-
-
-
-
16.5
18.0
21.0
22.5
24.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
-
-
-
-
-
1.7
1.5
1.3
1.2
1.3
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 2400 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
13.5 -
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 2400 MHz
6.5
2.5
4.0
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
4.0
0.5
6.5
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
11.5
16.5
BGU6101
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Product data sheet
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3.0 V; VENABLE 1.2 V unless otherwise specified. All measurements done on
characterization board without matching, de-embedded up to the pins.
Symbol Parameter
3500 MHz frequency
Conditions
Min Typ
Max Unit
s212
insertion power gain
f = 3500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 3500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 3500 MHz
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
4.0
-
-
-
-
-
dB
dB
dB
dB
dB
6.0
10.0
12.5
14.5
MSG
NFmin
PL(1dB)
IP3O
maximum stable gain
-
-
-
-
-
15.0
16.5
18.0
18.5
19.5
-
-
-
-
-
dB
dB
dB
dB
dB
minimum noise figure
-
-
-
-
-
2.4
2.3
2.0
1.9
1.8
-
-
-
-
-
dB
dB
dB
dB
dB
output power at 1 dB gain compression f = 3500 MHz
ICC(tot) = 1.1 mA
-
-
-
-
-
13.5 -
12.0 -
dBm
dBm
dBm
dBm
dBm
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
f = 3500 MHz
7.0
2.0
3.5
-
-
-
output third-order intercept point
ICC(tot) = 1.1 mA
ICC(tot) = 1.5 mA
ICC(tot) = 3 mA
ICC(tot) = 5 mA
ICC(tot) = 10 mA
-
-
-
-
-
5.0
1.0
6.0
-
-
-
-
-
dBm
dBm
dBm
dBm
dBm
10.5
16.5
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Product data sheet
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
9. Enable control
Table 9.
ENABLE (pin 5)
40 C Tamb +85 C.
VENABLE (V)
0.4
State
OFF
ON
1.2
aaa-001754
aaa-001755
16
16
l
I
CC
(mA)
CC
(mA)
(4)
12
12
(2)
(3)
(2)
8
4
0
8
4
0
(3)
(1)
2
(1)
3
4
5
10
10
10
10
10
1
2
3
4
5
6
R
(Ω)
V
, V (V)
CC ctrl
bias
Tamb = 25 C.
Tamb = 25 C.
(1) VCC = 1.5 V
(2) VCC = 3 V
(1) Rbias = OPEN
(2) Rbias = 12 k
(3)
V
CC = 5 V
(3)
Rbias = 4.7 k
(4) Rbias = 2.4 k
Fig 2. Supply current as a function of bias resistor;
typical values
Fig 3. Supply current as a function of supply voltage
and control voltage; typical values
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Product data sheet
Rev. 2 — 3 February 2012
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
aaa-001756
aaa-001757
30
2
25
o
(1)
(2)
IP3
|S
|
21
(dBm)
(dB)
(3)
15
(4)
(5)
(3)
20
(6)
5
-5
(7)
10
0
(2)
(1)
-15
0
4
8
12
0
5
10
15
20
(mA)
I
(mA)
I
CC(tot)
CC(tot)
Tamb = 25 C; VCC = 3 V; Pi = 30 dBm.
Tamb = 25 C; f1 = 900 MHz; f2 = 900.2 MHz;
Pi = 30 dBm.
(1) f = 150 MHz
(2) f = 450 MHz
(3) f = 900 MHz
(4) f = 1500 MHz
(5) f = 1900 MHz
(6) f = 2400 MHz
(7) f = 3500 MHz
(1) VCC = 1.5 V
(2) VCC = 3 V
(3)
VCC = 5 V
Fig 4. Insertion power gain (s212) as a function of
Fig 5. Output third-order intercept point as a function
of total supply current; typical values
total supply current; typical values
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Product data sheet
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NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
aaa-001758
aaa-001759
10
16
P
L(1dB)
2
|
|S
21
(dBm)
(dB)
5
(3)
12
0
-5
8
4
0
(2)
-10
-15
(1)
0
5
10
15
I
20
(mA)
0
1000
2000
3000
4000
f (MHz)
CC(tot)
Tamb = 25 C; f = 900 MHz.
VCC = 1.5 V
Tamb = 25 C; ICC(tot) = 1.5 mA; VCC = 3 V; Pi = 30 dBm.
(1)
(2) VCC = 3 V
(3) VCC = 5 V
Fig 6. Output power at 1 dB gain compression as a
function of total supply current; typical values
Fig 7. Insertion power gain (s212) as a function of
frequency; typical values
aaa-001760
2
NF
min
(dB)
1.5
1
0.5
0
0
1000
2000
3000
f (MHz)
Tamb = 25 C; ICC(tot) = 1.5 mA; VCC = 3 V.
Fig 8. Minimum noise figure as a function of frequency; typical values
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Product data sheet
Rev. 2 — 3 February 2012
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NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
10. Package outline
HXSON6: plastic thermal enhanced super thin small outline package; no leads;
6 terminals; body 2 x 1.3 x 0.35 mm
SOT1209
shape
optional (4×)
X
D
terminal 1
index area
A
E
A
1
detail X
e
1
b
L
3
2
4
e
e
E
E
1
5
6
2
1
terminal 1
index area
shape
optional (6×)
D
1
0
1.5 mm
scale
Dimensions
Unit
A
A
1
b
D
D
E
E
1
E
e
e
1
L
1
2
max
mm nom
min
0.15 1.9 1.0
0.35 0.04 0.25 2.1 1.2
1.2 1.2
1.4 1.4
0.15
0.25
1.0 0.5 1.7
Note
1. Dimension A is including plating thickness.
sot1209_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-06-10
11-09-15
SOT1209
Fig 9. Package outline SOT1209
BGU6101
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Product data sheet
Rev. 2 — 3 February 2012
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
11. Abbreviations
Table 10. Abbreviations
Acronym
AC
Description
Alternating Current
Automated Meter Reading
AMR
CMMB
DC
China Mobile Multimedia Broadcasting
Direct Current
ESD
ElectroStatic Discharge
FM
Frequency Modulation
ISM
Industrial Scientific Medical
Monolithic Microwave Integrated Circuit
Radio Frequency
MMIC
RF
RKE
Remote Keyless Entry
TPMS
WLAN
Tire-Pressure Monitoring System
Wireless Local Area Network
12. Revision history
Table 11. Revision history
Document ID
BGU6101 v.2
Modifications:
Release date
20120203
Data sheet status
Change notice
Supersedes
Product data sheet
-
BGU6101 v.1
• Section 1 on page 1, Table 2 on page 2, Table 3 on page 2, Table 5 on page 3, Table 8 on
page 5: Updated
• Section 9 on page 13: Added figures
BGU6101 v.1
20110921
Preliminary data sheet
-
-
BGU6101
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Product data sheet
Rev. 2 — 3 February 2012
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
13.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGU6101
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Product data sheet
Rev. 2 — 3 February 2012
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BGU6101
NXP Semiconductors
Wideband silicon low-noise amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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Product data sheet
Rev. 2 — 3 February 2012
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Wideband silicon low-noise amplifier MMIC
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
2.1
2.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Enable control . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 February 2012
Document identifier: BGU6101
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