BGT24LTR11N16 [INFINEON]
BGT24LTR11 is a silicon germanium radar MMIC for signal generation and reception, operating in the 24GHz to 24.25GHz ISM band. It is based on a 24GHz fundamental voltage controlled oscillator (VCO). The device was designed with doppler-radar applications in mind — as it is capable of keeping the transmit signal inside the ISM band without any external PLL — and may also be used in other types of radar such as FMCW or FSK. The device is manufactured in a 0.18 μm SiGe:C technology offering a cutoff frequency of 200GHz. It is packaged in a 16-pin leadless RoHS compliant TSNP package.;
| 型号： | BGT24LTR11N16 |
| 厂家： | 
Infineon |
| 描述： | BGT24LTR11 is a silicon germanium radar MMIC for signal generation and reception, operating in the 24GHz to 24.25GHz ISM band. It is based on a 24GHz fundamental voltage controlled oscillator (VCO). The device was designed with doppler-radar applications in mind — as it is capable of keeping the transmit signal inside the ISM band without any external PLL — and may also be used in other types of radar such as FMCW or FSK. The device is manufactured in a 0.18 μm SiGe:C technology offering a cutoff frequency of 200GHz. It is packaged in a 16-pin leadless RoHS compliant TSNP package. ISM频段 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGT24LTR11N16
Silicon Germanium 24GHz Radar
Transceiver MMIC
Data Sheet
Revision: 1.3
RF and Protection Devices
Edition 2018-05-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
BGT24LTR11N16
24GHz Radar MMIC
Data Sheet
Revision History: 2018-05-08
Previous Revision: Datasheet Rev. 1.1
Page
8,9
8
Subjects (major changes since last revision)
Reference to matching structures and footprint according to AN472
Specification of Harmonic Suppression is limited to second harmonic only
Note is added to TX_ON low /high level input voltage specification
8
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc.
Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of
Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd.
Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc.
TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company
Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments
Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex
Limited.
Last Trademarks Update 2011-02-24
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
List of Content, Figures and Tables
Table of Content
1
Introduction ........................................................................................................................................5
1.1
Features ...............................................................................................................................................5
2
Electrical Characteristics ..................................................................................................................7
Absolute Maximum Ratings .................................................................................................................7
ESD Integrity ........................................................................................................................................7
Power Supply .......................................................................................................................................7
TX Section............................................................................................................................................8
RX Section (Measured with TX_ON=0V).............................................................................................9
Frequency Divider ................................................................................................................................9
Proportional to absolute temperature (PTAT) voltage source .............................................................9
2.1
2.2
2.3
2.4
2.5
2.6
2.7
3
4
Pin description .................................................................................................................................10
Physical Dimension .........................................................................................................................11
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
BGT24LTR11N16 in TSNP-16-9..........................................................................................................5
BGT24LTR11N16 block diagram.........................................................................................................6
Pin-out (top view)................................................................................................................................10
Package Outline (top, side and bottom view) of TSNP-16-9 .............................................................11
Marking Layout of TSNP-16-9 (example) ..........................................................................................12
Soldering Footprint of TSNP-16-9......................................................................................................12
Packing Description of TSNP-16-9; ø Reel: 180 mm, Pieces / Reel: 3000, Reels / Box: 1..............13
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Absolute maximum ratings: TA = -40 °C ... 85 °C; all voltages with respect to ground.......................7
ESD integrity ........................................................................................................................................7
Power supply characteristics: TA = -40 °C … 85 °C.............................................................................7
TX characteristics: TA = -40 °C ... 85 °C ..............................................................................................8
RX characteristics: TA = -40 °C … 85 °C .............................................................................................9
Frequency divider characteristics: TA = -40 °C ... 85 °C ......................................................................9
PTAT voltage source characteristics: TA = -40 °C ... 85 °C .................................................................9
Pin definition and function..................................................................................................................10
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Introduction
1
Introduction
1.1
Features
24GHz transceiver MMIC
Fully integrated low phase noise VCO
Built in temperature compensation circuit for
VCO stabilization
Homodyne quadrature receiver
Frequency divider
Low power consumption
Fully ESD protected device
Single ended RF and IF terminals
200 GHz bipolar SiGe:C technology b7hf200
Single supply voltage 3.3V
TSNP-16-9 plastic package
Pb-free (RoHS compliant) package
Figure 1
BGT24LTR11N16 in TSNP-16-9
Description
The BGT24LTR11 is a Silicon Germanium Transceiver MMIC operating from 24.0 GHz up to 24.25 GHz. It is
based on a 24 GHz fundamental voltage controlled oscillator (VCO). A built in voltage source delivers a VCO
tuning voltage (V_PTAT) which is proportional to absolute temperature. When connected to the VCO tuning pin
(V_TUNE) it compensates for the inherent frequency drift of the VCO over temperature thus stabilizing the VCO
within the ISM band eliminating the need for a PLL/Microcontroller. An integrated 1:16 frequency divider also
allows for external phase lock loop VCO frequency stabilization.
The receiver section uses a low noise amplifier (LNA) in front of a quadrature homodyne down conversion mixer
in order to provide excellent receiver sensitivity. Derived from the internal VCO signal, a RC polyphase filter
(PPF) generates quadrature LO signals for the quadrature mixer. The I/Q IF outputs are available through a
single ended terminal respectively.
The device is manufactured in a 0.18μm SiGe:C technology offering a cutoff frequency of 200 GHz. It is
packaged in a 16 pin leadless RoHs compliant TSNP package.
Product Name
Package
TSNP-16-9
Chip
Marking
BGT24LTR11N16
T1811
LTR11
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Introduction
IFI IFQ
VCC
90°
VEE
VEE
TX
MPA
RFIN
VEE
LNA
VEE
0°
TX_ON
f-Div
PTAT
VCC_DIV DIV
VTUNE
R_TUNE
V_PTAT VCC_PTAT
VisioDocument
Figure 2
BGT24LTR11N16 block diagram
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute maximum ratings: TA = -40 °C ... 85 °C; all voltages with respect to ground
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
-0.3
-0.3
Max.
3.6
Supply voltage
VCC
V
V
V
Supply voltage divider
VCC_DIV
3.6
Supply voltage PTAT
voltage source
VCC_PTAT -0.3
3.6
MMIC provides short circuit
to GND for RF_IN and
TX_OUT
DC voltage at RF pins
VDC_RF
0
Voltage applied to none-RF VDC_I/O
-0.3
VCC +0.3 V
I/O pins
P
Total power dissipation
300
85
mW
Ambient temperature range TA
Storage temperature range TSTG
-40
-50
°C
°C
125
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
ESD Integrity
Table 2
ESD integrity
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
1
ESD robustness HBM1
ESD robustness CDM2
VESD-HBM -1
kV
V
VESD-CDM -500
500
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kOhm, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human Body Model
(HBM)-Component Level
2) According to JEDEC JESD22-C101 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-Discharge-Withstand
Thresholds of Microelectronic Components
Please note that this result is subject to:
- lot variations within the manufacturing process as specified by Infineon
- changes in the specific test setup
2.3
Power Supply
Table 3
Power supply characteristics: TA = -40 °C … 85 °C
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
Supply voltage
VCC
3.2
3.3
3.4
V
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Electrical Characteristics
Table 3
Power supply characteristics: TA = -40 °C … 85 °C
Parameter
Symbol
Value
Typ.
45
Unit
mA
µs
Note/
Test Condition
Min.
Max.
55
Supply current
Duty cycle
ICC
1 : 1000
1
1
Pulse duration
tP
2.4
TX Section
Table 4
TX characteristics: TA = -40 °C ... 85 °C; all parameters specified including a TX port
matching structure and package footprint provided by Infineon in AN472
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
VCO frequency range
fVCO
24.050
24.250
GHz
V_PTAT connected to
VTUNE; 16 kOhm resistor
connected from R_TUNE to
GND
VCO phase noise
VCO AM noise
PN
-55
-80
-135
2.5
dBc/ Hz @ 10 kHz offset
@ 100 kHz offset
dBc/ Hz @ 100 kHz offset
V
PAM
VTUNE
Tuning voltage to cover
VCO frequency range
0.7
25
VCO tuning sensitivity within
VCO frequency range
720
2000
MHz/V
dBc
Second Harmonic
Suppression
Non-harmonic suppression
Non-harmonic suppression
TX output power
62
45
2
dBc
dBc
dBm
f>10 GHz; DDIV=16
f≤10 GHz; DDIV=16
PTX
6
10
TX load impedance
ZTXOUT
50
Including TX port matching
structure according to AN472
VTX_ON_low
VTX_ON_high
VTX_ON_hys
TX_ON low level input
voltage (TX=OFF)
0.8
V
TX_ON pin is chip internally
pulled up to VCC via typ.
98 kOhm resistor
TX_ON high level input
voltage (TX=ON)
2
V
TX_ON pin is chip internally
pulled up to VCC via typ.
98 kOhm resistor
TX_ON input voltage
hysteresis
50
mV
ITX_ON
TX_ON input current
-100
100
2
µA
ns
tTX_ON
TX_ON switching time
Power up TX settling time
tTX_Power_up
100ns
Defines the time TX section
requires to settle after VCC
supply voltage is within
specified range
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Electrical Characteristics
2.5
RX Section (Measured with TX_ON=0V)
Table 5
RX characteristics: TA = -40 °C … 85 °C; all parameters specified including RX port
matching structure and package footprint provided by Infineon in AN472
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
RX frequency range
RX input impedance
fRX
24.0
24.25
GHz
ZRXIN
50
Including RX port matching
structure according to
AN472
Voltage conversion gain
SSB noise figure
GC
15.5
20
10
26.5
18
dB
dB
NFSSB
Single sideband
@ fIF = 100 kHz
Input compression point
Quadrat. phase imbalance
Quadrat. amplitude imbalance
IF output impedance
IP1dB
P
-28
0
dBm
deg
dB
24
1
-1
A
ZIF
1
Single ended
k
2.6
Frequency Divider
Table 6
Frequency divider characteristics: TA = -40 °C ... 85 °C
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
Prescaler division ratio
DDIV
16
8192
-
16 if VCC_PTAT = 0 V,
8192 if VCC_PTAT = 3.3 V
Prescaler output voltage for VDIV16
division ratio 16
60
120
350
mV
Peak to Peak voltage when
DIV_OUT is terminated with
50 Ohm and DDIV=16
Prescaler output “high”
voltage for division ratio
8192
VDIV8192H 2.4
V
V
DIV_OUT is loaded with
1MOhm, 13 pF
Prescaler output “low”
voltage for division ratio
8192
VDIV8192L
0.8
DIV_OUT is loaded with
1MOhm, 13 pF
Prescaler supply voltage
Prescaler supply current
VCC_DIV
ICC_DIV
3.2
13
3.3
19
3.4
25
V
mA
2.7
Proportional to absolute temperature (PTAT) voltage source
Table 7
PTAT voltage source characteristics: TA = -40 °C ... 85 °C
Parameter
Symbol
Value
Typ.
Unit
Note/
Test Condition
Min.
Max.
3.4
Supply voltage
Supply current
VCC_PTAT 3.2
3.3
1.5
V
ICC_PTAT
2.5
mA
Data Sheet , 1.3
2018-05-08
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BGT24LTR11N16
24GHz Radar MMIC
Pin description
Table 7
PTAT voltage source characteristics: TA = -40 °C ... 85 °C
Parameter
Symbol
Value
Typ.
1.3
Unit
Note/
Test Condition
Min.
Max.
Output voltage
VOUT_PTAT 0.7
2
V
3
Pin description
9
8
7
6
5
4
10
VEE
VEE
11
3
2
TX
RX
12
13
VEE
VEE
14
15
16
1
20150701_BGT24LTR11_pin
_out_T1811.vsd
Figure 3
Pin-out (top view)
Table 8
Pin definition and function
Name
Pin Number
Function
1
2
3
4
5
6
VCC
VEE
RX
Supply voltage
Ground
Receiver RF input
GND
VEE
TX_EN
IFQ
Output power enable
Quadrature phase down converter
IF output
7
IFI
In phase down converter IF output
Frequency divider output
Supply voltage of prescaler
Ground
8
DIV_OUT
VCC_DIV
VEE
9
10
11
12
TX
Tranmitter RF output
Ground
VEE
Data Sheet , 1.3
2018-05-08
10 / 14
BGT24LTR11N16
24GHz Radar MMIC
Physical Dimension
Table 8
Pin Number
13
Pin definition and function
Name
Function
R_TUNE
VCO operating frequency band
select
14
15
16
V_TUNE
V_PTAT
VCO frequency tuning input
PTAT voltage source output
PTAT voltage source power supply
VCC_PTAT
4
Physical Dimension
Figure 4
Package Outline (top, side and bottom view) of TSNP-16-9
Data Sheet , 1.3
2018-05-08
11 / 14
BGT24LTR11N16
24GHz Radar MMIC
Physical Dimension
Figure 5
Marking Layout of TSNP-16-9 (example)
Figure 6
Soldering Footprint of TSNP-16-9
Data Sheet , 1.3
2018-05-08
12 / 14
BGT24LTR11N16
24GHz Radar MMIC
Physical Dimension
Figure 7
Packing Description of TSNP-16-9; ø Reel: 180 mm, Pieces / Reel: 3000, Reels / Box: 1
Data Sheet , 1.3
2018-05-08
13 / 14
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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