BGSF110GN26_15 [INFINEON]
Antenna Switch Module with integrated GPIO interface;
| 型号： | BGSF110GN26_15 |
| 厂家： | 
Infineon |
| 描述： | Antenna Switch Module with integrated GPIO interface |
| 文件： | 总23页 (文件大小：930K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGSF110GN26
SP10T Antenna Switch Module with
GPIO Interface, 2 GSMTX Ports for
multi-mode GSM/EDGE, WCDMA or
LTE Applications
Main RF Frontend Applications
Application Note AN306
Revision: Rev. 1.0
2014-11-28
RF and Protection Devices
Edition 2015-01-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE
IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR
QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION
NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON
TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND
(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN
THIS APPLICATION NOTE.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Application Note AN306
Revision History: 2014-11-28
Previous Revision: Not applicable; this is 1st version
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™,
EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™,
OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-
SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. ANSI™ of American National
Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc.
CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa
Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve
Incorporated. MCS™ of Intel Corp. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared
Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION.
MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of
Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™ of Red
Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO
YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO
KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence
Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND
RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
Application Note AN306, Rev. 1.0
2014-11-28
3 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
List of Content, Figures and Tables
Table of Contents
1
Introduction ........................................................................................................................................6
2
BGSF110GN26 Features....................................................................................................................6
Main Features ......................................................................................................................................6
Functional Diagram ..............................................................................................................................6
Pin Configuration..................................................................................................................................7
Pin Description .....................................................................................................................................7
2.1
2.2
2.3
2.4
3
Application..........................................................................................................................................8
3.1
Application Board .................................................................................................................................9
4
Small-Signal Characteristics...........................................................................................................10
Insertion Loss from Antenna Port to Respective RF Ports ................................................................10
Forward transmission GSM Tx...........................................................................................................11
Reflection Antenna Port to all Ports ...................................................................................................13
Port Reflection GSM Tx Ports............................................................................................................14
Isolation..............................................................................................................................................15
4.1
4.2
4.3
4.4
4.5
5
5.1
5.1.1
5.1.2
5.1.3
Non-Linear Performance of BGSF110GN26 ..................................................................................16
Intermodulation...................................................................................................................................16
Intermodulation Measurement Setup.................................................................................................17
Intermodulation Measurement conditions ..........................................................................................18
IMD Test Results for Band 1 and 5....................................................................................................18
6
Harmonic Distortion.........................................................................................................................19
6.1.1
Harmonic Generation Measurement conditions.................................................................................19
7
8
Abbreviations ...................................................................................................................................21
Authors..............................................................................................................................................22
Application Note AN306, Rev. 1.0
2014-11-28
4 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
List of Content, Figures and Tables
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
BGSF110GN26 functional diagram.....................................................................................................6
BGSF110GN26 pin configuration.........................................................................................................7
BGSF110GN26 in a mobile phone front end .......................................................................................8
Layout of the application board............................................................................................................9
Layout of de-embedding “ through” and “half” boards .........................................................................9
PCB layer information ........................................................................................................................10
Application circuit ...............................................................................................................................10
Forward transmission antenna port to TRx ports...............................................................................11
Forward transmission GSM Tx ports..................................................................................................12
Figure 10 Forward transmission TRx2 over temperature...................................................................................12
Figure 11 Reflection antenna port to all TRx ports............................................................................................13
Figure 12 Port reflection GSM Tx ports..............................................................................................................14
Figure 13 Isolation neighbour ports....................................................................................................................15
Figure 14 Isolation TRx to TX1 port ...................................................................................................................15
Figure 15 Isolation TRx to Rx2 port....................................................................................................................16
Figure 16 Block diagram of RF switch intermodulation......................................................................................17
Figure 17 Intermodulation measurement test setup...........................................................................................17
Figure 18 Set-up for harmonics measurement...................................................................................................19
Figure 19 Harmonics at fin=824 MHz..................................................................................................................20
Figure 20 Harmonics at fin=1710MHz.................................................................................................................20
List of Tables
Table 1
Table 2
Table 3
Pin description (top view) .....................................................................................................................7
Insertion loss from antenna port to RF ports (all other ports terminated with 50Ohm resistance) ..10
Insertion loss from antenna port to GSM Tx ports (all other ports terminated with 50 Ohm
resistance)..........................................................................................................................................11
Return loss from antenna port to RF ports (all other ports terminated with 50Ohm resistance) .......13
Return loss from antenna port to GSM Tx ports (all other ports terminated with 50-Ohm resistance)14
Test conditions of IMD measurements...............................................................................................18
IMD measurements............................................................................................................................18
Harmonic generation measurement conditions .................................................................................19
Table 4
Table 5
Table 6
Table 7
Table 8
Application Note AN306, Rev. 1.0
2014-11-28
5 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Introduction
1
Introduction
The BGSF110GN26 is a Single-Pole Ten-Throw (SP10T) Antenna Switch Module (ASM) optimized for mobile
phone and wireless applications for operating frequencies up to 3.8 GHz. It is a perfect solution for multi-mode
handsets based on quadband GSM, WCDMA and LTE. The switch module configuration is shown in Figure 1
and supports a wide supply voltage range of 2.4 to 3.3 V.
The module comes in a miniature TSNP package and is comprised of a high power CMOS SP10T switch, an
integrated GPIO controller, and harmonic filters for GSM low-band and high-band transmit paths. The on-chip
controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 to 3.1 V. External DC
blocking capacitors are not required in typical applications provided that DC voltages are not applied to any RF
port.
2
BGSF110GN26 Features
2.1
Main Features
•
•
•
•
•
•
•
•
•
•
Suitable for multi-mode GSM / EDGE / WCDMA / LTE / LTE-Advanced applications
Frequency range of 100 MHz to 2.7 GHz
Ultra-low insertion loss
Integrated GSM transmit filters
8 interchangeable, high-linearity WCDMA TRX ports
2 high-linearity GSM TX paths
High port-to-port isolation
Integrated MIPI RFFE interface
No DC decoupling capacitors required, if no DC applied on RF lines
Small form factor: 3.2 mm x 2.8 mm x 0.73 mm
2.2
Functional Diagram
ANT
TRX1
TRX2
TRX3
TRX4
TRX5
TRX6
TRX7
TRX8
TX_HB
TX_LB
Harmonic
Filters
SP10T
GPIO
Controller
BGSF110G_Functional_Diagram.vsd
Figure 1
BGSF110GN26 functional diagram
Application Note AN306, Rev. 1.0
2014-11-28
6 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
BGSF110GN26 Features
2.3
Pin Configuration
GND
TRX3
TRX2
TRX1
TRX7
GND
TRX8
GND
21
14
VDD
V4
TX1
GND
GND
TX2
PG-TSNP-26-2
3.4 x 2.6 mm
400 µm pad pitch
V3
V2
V1
GND
26
8
1
GND
TRX4
TRX5
TRX6
GND
GND
ANT
GND
Figure 2
2.4
BGSF110GN26 pin configuration
Pin Description
Table 1
Pin description (top view)
Pin NO
Name
GND
GND
TRX4
TRX5
TRX6
GND
GND
ANT
Pin Type
Function
0
1
GND
GND
I/O
Ground, die pad
DC ground
WCDMA TRX port
WCDMA TRX port
WCDMA TRX port
2
I/O
3
I/O
4
5
GND
GND
I/O
RF ground
RF ground
Antenna port
RF ground
RF ground
GSM HB port
RF ground
RF ground
GSM LB port
RF ground
6
7
GND
GND
TX2
GND
GND
I
8
9
10
11
12
13
14
15
16
17
18
19
20
GND
GND
TX1
GND
GND
I
GND
TRX8
GND
TRX7
TRX1
TRX2
TRX3
GND
I/O
WCDMA TRX port
RF ground
WCDMA TRX port
GND
I/O
I/O
I/O
I/O
WCDMA TRX port
WCDMA TRX port
WCDMA TRX port
Application Note AN306, Rev. 1.0
2014-11-28
7 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Application
Table 1
Pin description (top view)
Pin NO
Name
GND
VDD
V4
Pin Type
Function
21
22
23
24
25
26
GND
DC ground
PWR
Supply Voltage
GPIO Control pin
GPIO Control pin
GPIO Control pin
GPIO Control pin
I
I
I
I
V3
V2
V1
3
Application
A typical use of the BGSF110GN26 ASM in a mobile-phone application is shown in Figure 3. In the main
antenna path of the RF front end, the Infineon BGSF110GN26 routes the antenna signal to the required band-
dependent front end components (e.g. duplexers, filters, PA), which in turn are connected directly to the
transceiver IC. For the diversity path, Infineon recommends its RF switches such as the BGS15AN16. Infineon
also offers a broad portfolio of Low-Noise Amplifiers (LNAs) that are optimized for the receive path in mobile-
phone applications.
Infineon RF Switch
Infineon ASM
BGSF110GN26
Main
Diversity
ASM
Infineon
LNAs
BGAxx
Transceiver
Figure 3
BGSF110GN26 in a mobile phone front end
Application Note AN306, Rev. 1.0
2014-11-28
8 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Application
3.1
Application Board
Shown below is a picture of the EValuation Board (EVB) used for all measurements (Figure 4). This EVB is
designed such that all 50-Ohm connecting lines have the same length.
In order to obtain accurate values for insertion loss measurements of the BGSF110GN26, all influences and
losses of the EVB, lines, and connectors have to be eliminated. Therefore a separate de-embedding board
representing the line length is necessary (Figure 5).
The calibration of the NetWork Analyser (NWA) is done in six steps:
1) Perform full calibration on all NWA ports.
2) Attach special SMA connector (use same as soldered to EVB with no inner conductor) to port 2 and
perform “open” port extension. Turn the port extensions on.
3) Connect the “half” de-embedding board (Figure 5 right board) between port 1 and port 2, and store
this as an s-parameter (.s2p) file. Now turn all port extensions off.
4) Load the stored s-parameter file of the “half” de-embedding board as the de-embedding file for all
NWA ports used.
5) Now switch all port extentions on.
6) Cross-check the insertion loss with the “through” de-embedding board (Figure 5 left board)
Please note: On PCB, TRx7 is Rx 1 and TRx 8 is Rx2
Figure 4
Layout of the application board
Figure 5
Layout of de-embedding “ through” and “half” boards
The EVB is made of a sandwich of FR4 and Rogers 04002, and has 3 layers. The layer stack is shown in Figure
6.
Application Note AN306, Rev. 1.0
2014-11-28
9 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
Vias
Rogers04002 , 0.2mm
Copper
35µm
FR4, 0.7mm
Figure 6
PCB layer information
4
Small-Signal Characteristics
The small-signal characteristics were measured at 25 °C using a Vector Network Analyzer (VNA), a supply
voltage, Vdd, of 3.0 V, and the application circuit shown in Figure 7.
ANT
BGS18MN14
27nH
SP8T
Figure 7
4.1
Application circuit
Insertion Loss from Antenna Port to Respective RF Ports
Table 2
Insertion loss from antenna port to RF ports (all other ports terminated with 50Ohm
resistance)
Frequency
(MHz)
704 716 740 751 824 881 915 942 1710 1842 1960 1970 2017 2140 2170 2350 2593 2690 3500
0.62 0.62 0.61 0.61 0.6
0.63 0.62 0.62 0.62 0.6
0.6 0.59 0.6 0.69 0.71 0.73 0.73 0.75 0.79 0.8 0.89
0.6 0.6
1
1.1
1.7
1.7
1.6
1.8
2
TRx1
TRx2
0.6 0.68 0.7 0.72 0.72 0.74 0.77 0.78 0.85 0.99 1.1
0.65 0.64 0.64 0.64 0.61 0.61 0.61 0.61 0.67 0.68 0.7
0.63 0.62 0.62 0.62 0.6 0.6 0.6
0.62 0.61 0.61 0.61 0.61 0.62 0.62 0.62 0.74 0.75 0.76 0.76 0.77 0.81 0.82 0.9
0.59 0.59 0.58 0.58 0.57 0.57 0.57 0.57 0.72 0.75 0.79 0.79 0.82 0.88 0.9
0.7 0.71 0.75 0.76 0.83 0.97
1
1.1
1.2
1.4
1
TRx3
0.6 0.68 0.7 0.72 0.72 0.73 0.77 0.78 0.86
1
TRx4
1.1
1.3
TRx5
1
2.3
1.7
1.6
TRx6
0.62 0.61 0.61 0.61 0.6 0.61 0.61 0.61 0.73 0.74 0.75 0.75 0.76 0.79 0.79 0.85 0.98
0.63 0.62 0.62 0.62 0.59 0.59 0.59 0.59 0.72 0.71 0.71 0.71 0.72 0.75 0.76 0.84 0.98
TRx7 (Rx1)
TRx8 (Rx2)
1
Application Note AN306, Rev. 1.0
2014-11-28
10 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
Forward Transmission TRx ports
0
-0.5
-1
0.704 GHz
-0.5907 dB
2.14 GHz
-0.7452 dB
2.14 GHz
3.5 GHz
-1.553 dB
-0.8789 dB
-1.5
-2
DB(|S(2,1)|)
TRX1
DB(|S(2,1)|)
TRX4
DB(|S(2,1)|)
RX1
DB(|S(2,1)|)
TRX2
DB(|S(2,1)|)
TRX5
DB(|S(2,1)|)
RX2
3.5 GHz
-2.34 dB
-2.5
-3
DB(|S(2,1)|)
TRX3
DB(|S(2,1)|)
TRX6
0
1
2
3
4
Frequency (GHz)
Figure 8
Forward transmission antenna port to TRx ports
4.2
Forward transmission GSM Tx
Table 3
Insertion loss from antenna port to GSM Tx ports (all other ports terminated with 50 Ohm
resistance)
Frequency
(MHz)
704 716 740 751 824 881 915 942 1710 1842 1960 1970 2017 2140 2170 2350 2593 2690 3500
0.69 0.69 0.71 0.71 0.75 0.79 0.81 0.82 1.1
0.97 0.96 0.97 43
1.2
31
1.3
28
1.3
28
1.4
28
1.9
28
2.1
28
4
8.5
36
11
41
47
25
Tx1(LB)
Tx2(HB)
1
1
1
1
1
30
Application Note AN306, Rev. 1.0
2014-11-28
11 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
Forward Transmission Tx ports
0
-10
-20
-30
-40
-50
-60
HB
LB
1.862 GHz
-1.193 dB
0.883 GHz
-0.7937 dB
1.714 GHz
-43.18 dB
3.476 GHz
-50.61 dB
2.729 GHz
-42.78 dB
0.0003
2
4
6
Frequency (GHz)
Figure 9
Forward transmission GSM Tx ports
0
-0.2
-0.4
-0.6
-0.8
-1
TRx2 , -20 °
TRx2, 25°
TRx2, 85 °
-1.2
500
1000
1500
2000
2500
3000
Frequency
Figure 10 Forward transmission TRx2 over temperature
Application Note AN306, Rev. 1.0
2014-11-28
12 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
4.3
Reflection Antenna Port to all Ports
Table 4
Return loss from antenna port to RF ports (all other ports terminated with 50Ohm
resistance)
Frequency
(MHz)
704 716 740 751 824 881 915 942 1710 1842 1960 1970 2017 2140 2170 2350 2593 2690 3500
17.3 17.4 17.7 17.7 18.4 18.7 18.8 18.9 20.2 20.5 20.3 20.3 20.1 19.4 19.1 17.5 15
14 10.3
TRx1
TRx2
17.3 17.4 17.6 17.7 18.4 18.7 18.8 18.8 19.8 20.1 20.1 20.1 20 19.5 19.4 18.1 15.7 14.6 10.3
16.9 17.1 17.4 17.5 18.4 19 19.2 19.4 22 22.1 21.7 21.7 21.3 20.2 19.9 17.8 15.1 14.1 10.2
TRx3
17.5 17.7 18 18.1 18.9 19.4 19.6 19.7 20.7 20.8 20.4 20.4 20.1 19.1 18.8 17 14.6 13.5
17.9 17.9 18 18 18.1 17.9 17.8 17.7 17.5 18.1 18.5 18.5 18.6 18.4 18.3 17.2 14.6 13.4 8.24
18.9 19.1 19.5 19.6 20.4 20.7 20.7 20.8 18 17.3 16.4 16.4 16 14.9 14.7 13.1 11.1 10.4 7.05
17.5 17.6 17.8 17.8 18 18 17.9 17.9 17.1 17.5 17.8 17.9 18 18.1 18.1 17.9 16.6 15.5 10.2
9
TRx4
TRx5
TRx6
TRx7 (Rx1)
TRx8 (Rx2)
17 17.2 17.5 17.6 18.6 19.3 19.5 19.8 22.2 22.4 21.9 21.8 21.5 20.1 19.8 17.7 15.2 14.3 10.8
Reflection TR ports
0
-5
-10
-15
TRx1
TRx2
TRx3
TRx4
TRx5
Trx6
DB(|S(1,1)|)
RX1
-20
-25
-30
DB(|S(1,1)|)
RX2
0.0003
2
4
6
Frequency (GHz)
Figure 11 Reflection antenna port to all TRx ports
Application Note AN306, Rev. 1.0
2014-11-28
13 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
4.4
Port Reflection GSM Tx Ports
Table 5
Return loss from antenna port to GSM Tx ports (all other ports terminated with 50-Ohm
resistance)
Frequency (MHz) 704
716
11.1
18.0
740
11.2
17.6
751
11.4
17.4
824
12.9
16.1
881
15.4
15.2
915
18.4
14.9
942
22.4
14.7
1710
1842
1960
1970
2017
Tx1 (LB)
Tx2 (HB)
11.0
18.2
13.1
12.9
11.7
11.6
10.8
Reflection TX ports
0
-10
-20
-30
-40
HB
LB
1.899 GHz
-16.15 dB
0.0003
2
4
6
Frequency (GHz)
Figure 12 Port reflection GSM Tx ports
Application Note AN306, Rev. 1.0
2014-11-28
14 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Small-Signal Characteristics
4.5
Isolation
Isolation_Neighbour_ TRx
0
-20
-40
-60
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_RX1_tRX2
Isolation_TRX3_tTRX4
-80
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_TRX1_tTRX2
Isolation_TRX5_tTRX4
-100
-120
DB(|S(2,1)|)
Isolation_TRX3_tTRX2
DB(|S(2,1)|)
Isolation_TRX5_tTRX6
0.0003
3
6
8.5
Frequency (GHz)
Figure 13 Isolation neighbour ports
Isolation TRx_to_Tx1
-20
-40
-60
DB(|S(2,1)|)
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_TRX2_tTX1
Isolatio_RX2_tTX1
-80
DB(|S(2,1)|)
Isolation_RX1_tTX1
Isolation_TRX3_tTX1
DB(|S(2,1)|)
Isolation_sTRX6_tTX1
DB(|S(2,1)|)
Isolation_TRX4_tTX1
-100
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_TRX1_tTX1
Isolation_TRX5_tTX1
-120
0.0003
2
4
6
Frequency (GHz)
Figure 14 Isolation TRx to TX1 port
Application Note AN306, Rev. 1.0
2014-11-28
15 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Non-Linear Performance of BGSF110GN26
Isolation_TRx_to_Tx2
-20
-40
-60
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_RX1_tTX2
Isolation_TRX1_tTX2
-80
DB(|S(2,1)|)
Isolation_RX2_tTX2
DB(|S(2,1)|)
Isolation_TRX2_tTX2
DB(|S(2,1)|)
DB(|S(2,1)|)
Isolation_sTRX5_tTX2
Isolation_TRX3_tTX2
-100
-120
DB(|S(2,1)|)
Isolation_sTRX6_tTX2
DB(|S(2,1)|)
Isolation_TRX4_tTX2
0.0003
2
4
6
Frequency (GHz)
Figure 15 Isolation TRx to Rx2 port
5
Non-Linear Performance of BGSF110GN26
Smart phones today can operate across several cellular bands covering GSM / EDGE / CDMA / UMTS /
WCDMA / LTE/TD-SCDMA / TD-LTE / LTE-A. The design of the RF front-end part in modern cellular phones is
becoming increasingly complex and demanding due to the increasing number of frequency bands and modes
that the phone needs to support. One of the main components of the RF front-end is the antenna switch that
selects which transmitter (TX)/receiver (RX) path can be connected to the antenna. The RF switch has to satisfy
high linearity requirements. The following material describes some of the main challenges of antenna switches
in mobile applications.
Modern smartphones are multi-mode devices that are capable of connecting to 2G, 3G and 4G networks. These
networks often use different frequency bands. The smartphone’s RF frontend must therefore include band-
specific components. In order to appropriately route signals for a given mode and band of operation, a high-
performance RF switch is an essential component of the front-end circuitry. The performance requirements of
the RF swtich are discussed in the following sections.
5.1
Intermodulation
Intermodulation Distortion (IMD2 and IMD3) is a parameter that describes the linearty of a device under multi-
tone conditions. The intermodulation between different frequency components generates undesired output
frequencies at the sum and difference frequencies of the input tones, and at multiples of those sum and
difference frequencies.
Application Note AN306, Rev. 1.0
2014-11-28
16 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Non-Linear Performance of BGSF110GN26
Some of these possible intermodulation scenarios are shown in Figure 16. In this example, the transmitted (Tx)
signal from the main antenna is coupled into the diversity antenna with high power. This signal (20 dBm) and a
received jammer signal (-15 dBm) are entering the switch.
Certain combinations of the TX and jammer frequencies are producing second- and third-order intermodulation
products that fall into the desired reception band, and reduce the sensitivity of the receiver.
Main
BT
WLAN
Navigation
Wifi
CB
Radio
TV
...
diversity
FM
PA
PA
A
Rxn
Rx1
Txn
Rxn
Rx2/3
Tx1
Rx1
Figure 16 Block diagram of RF switch intermodulation
5.1.1
Intermodulation Measurement Setup
-20dB
-6 dB
IMD Product
reference Plane
Tx
Blocker
Signal
Duplexer
Tunable
Bandpass
Filter
Signal
Generator
Power
Amplifier
Circulator
-6dB*
-20dB
-3 dB
DUT
Phase Shifter /
Delay Line
Tx
ANT
ANT
Tunable
Bandpass
Filter
Signal
Generator
Rx
-6 dB
Power reference plane
regarding Specification
Signal
Analyzer
Figure 17 Intermodulation measurement test setup
Application Note AN306, Rev. 1.0
2014-11-28
17 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Non-Linear Performance of BGSF110GN26
A requirement of the test setup for IMD measurements is high isolation between the RX and TX signals (Figure
17). In practice, a laboratory-grade duplexer with an isolation of 80 dB is used.
Table 6 shows the test specification for Band 1 and Band 5.
5.1.2
Intermodulation Measurement conditions
Table 6
Test conditions of IMD measurements
Band 1
TX
IMD product
Interferer
FIN (MHz)
PIN (dBm) CW
FIN (MHz)
1760
Test case
PIN (dBm) CW
FIMD (MHz)
IMD3
IMD2 low
IMD2 high
1950
190
4090
20
-15
2140
Band 5
Test case
FIN (MHz)
PIN (dBm) CW
FIN (MHz)
790
PIN (dBm) CW
FIMD (MHz)
IMD3
IMD2 low
IMD2 high
835
20
45
1715
-15
880
The results for Band 1 and Band 5 are given in Table 7.
5.1.3
IMD Test Results for Band 1 and 5
Table 7
IMD measurements
Intermodulation Products UMTS
Band 1
Band 1
TX
Interferer
Test case
FIN (MHz)
PIN (dBm)
FIN (MHz)
PIN (dBm)
FIMD (MHz) PIMD (dBm) IIPx (dBm)
IMD3
IMD2 low
IMD2 high
1950
1950
1950
20
20
20
1760
190
4090
-15
-15
-15
2140
2140
2140
-107
-93
-104
66
98
109
Intermodulation Products UMTS
Band 5
TX
Interferer
Band 5
Test case
FIN (MHz)
PIN (dBm)
FIN (MHz)
PIN (dBm)
FIMD (MHz) PIMD (dBm) IIPx (dBm)
IMD3
835
835
835
20
20
20
790
45
-15
-15
-15
880
880
880
-123
-92
74
97
IMD2 low
IMD2 high
1715
-105
110
Application Note AN306, Rev. 1.0
2014-11-28
18 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Harmonic Distortion
6
Harmonic Distortion
Harmonic distortion is another important parameter for the characterization of an RF switch. RF switches have
to withstand high RF levels, up to 36 dBm. This high RF power at the input of a switch generates harmonics of
the waveform that is present. These harmonics (2nd and 3rd) can interfere with other reception bands or can
cause distortion in other RF applications (GPS, WLan) within the mobile phone.
.
-20dB
Directional
Coupler
-20dB
Tunable
Bandpass
Filter
Signal
Generator
Power
Amplifier
Circulator
A
Power meter
Agilent
E4419B
-3dB
Tx
B
DUT
ANT
K & L
-20dB
Directional
Coupler
Tunable
Bandstop
Filter
Signal
Analyzer
Figure 18 Set-up for harmonics measurement
6.1.1
Harmonic Generation Measurement conditions
Table 8
Harmonic generation measurement conditions
Tx
Harmonic Products
FIN (MHz)
PIN (dBm), 50% DC
20…38 TX LB port
20…30 TRX LB ports
20…38 TX HB port
20…30 TRX HB ports
FH2(MHz)
FH3 (MHz)
824
1648
2472
1800
3600
5400
The results for the harmonic generation at 824 MHZ and 1710 MHz are shown in Figure 19 for TX1 and Figure
20 Tx2. The input power (Pin) is plotted on the x axis, and the generated harmonics in dBm on the y axis.
Application Note AN306, Rev. 1.0
2014-11-28
19 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Harmonic Distortion
Harmonic Generation
@ 824 MHz TX1
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
H2
H3
20
25
30
35
40
Pin [dBm]
Figure 19 Harmonics at fin=824 MHz
Harmonic Generation
@1710MHz Tx2
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
H2
H3
20
25
30
35
40
Pin [dBm]
Figure 20 Harmonics at fin=1710MHz
Application Note AN306, Rev. 1.0
2014-11-28
20 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Abbreviations
7
Abbreviations
ASM
Antenna Switch Module
CMOS
EDGE
FR4
Complementary Metall-Oxide-Semiconductor
Enhanced Data Rates for GMS Evolution
Material for PCB
GPIO
GPS
General Purpose Input Output
Global Positioning System
GSM
Global System for Mobile Communication
Long-Term Evolution
LTE
LTE-A
PA
LTE Advanced
Power Amplifier
PCB
Printed Circuit Board
SMA
Sub Miniature version A
Rodgers
RF
Material for RF PCBs
Radio Frequency
TD LTE
TD-SCDMA
TSNP
UMTS
W-CDMA
WLAN
Time Division LTE
Time Division Synchronous Code Division Multiple Access
Thin Small Non Leaded Package
Universal Mobile Telecommunications System
Wideband Code Division Multiple Access
Wireless Local Area Network
Application Note AN306, Rev. 1.0
2014-11-28
21 / 23
BGSF110GN26
Antenna Switch Module with integrated GPIO interface
Authors
8
Authors
Andre Dewai, Senior Application Engineer of the Business Unit “RF and Protection Devices”
Ralph Kuhn, Senior Staff Application Engineer of the Business Unit “RF and Protection Devices”
Application Note AN306, Rev. 1.0
2014-11-28
22 / 23
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN306
相关型号：
BGT24LTR11N16
BGT24LTR11 is a silicon germanium radar MMIC for signal generation and reception, operating in the 24GHz to 24.25GHz ISM band. It is based on a 24GHz fundamental voltage controlled oscillator (VCO). The device was designed with doppler-radar applications in mind — as it is capable of keeping the transmit signal inside the ISM band without any external PLL — and may also be used in other types of radar such as FMCW or FSK. The device is manufactured in a 0.18 μm SiGe:C technology offering a cutoff frequency of 200GHz. It is packaged in a 16-pin leadless RoHS compliant TSNP package.
INFINEON
BGT24LTR22
The BGT24LTR22 is a low power, low noise multichannel Silicon Germanium transceiver MMIC for 24GHz radar applications. It provides building blocks for analog signal generation and reception, operating in the frequency range from 24.0 GHz up to 24.25 GHz. The device supports multiple modulation schemes, including FMCW and Doppler. Integrated digital blocks controlling the chip are implemented to support radar system design.
INFINEON
BGT24MTR11
The BGT24MTR11 is a silicon germanium MMIC for signal generation and reception, operating from 24.
INFINEON
BGT24MTR12
The BGT24MTR12 is a silicon germanium MMIC for signal generation and reception, operating from 24.00 to 26.00GHz. It is based on a 24GHz fundamental voltage controlled oscillator. A switchable frequency prescaler is included with output frequencies of 1.5GHz and 23kHz. The main RF output delivers up to 8 dBm signal power to feed an antenna. A RC polyphase filter (PPF) is used for LO quadrature phase generation of the homodyne quadrature downconversion mixer. Output power sensors as well as a temperature sensor are implemented for monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18μm SiGe:C technology offering a cutoff frequency of 200GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant VQFN package.
INFINEON
©2020 ICPDF网 联系我们和版权申明