BFP720-E6433 [INFINEON]
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon Germanium, NPN;
| 型号： | BFP720-E6433 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon Germanium, NPN 晶体管 |
| 文件： | 总5页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP720
NPN Silicon Germanium RF Transistor
Target data sheet
• High gain ultra low noise RF transistor
for low current operation
3
2
1
4
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Optimum gain and noise figure
at low current operation
• Ideal for WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable and available gain
G
= 26 dB at 1.8 GHz, G = 18 dB at 6 GHz
ms
ma
• 150 GHz f -Silicon Germanium technology
T
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP720
Marking
R9s
Pin Configuration
1 = B 2 = E 3 = C 4 = E -
Package
SOT343
-
2008-07-04
1
BFP720
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T > 0 °C
4
A
T ≤ 0 °C
3.5
13
13
1.2
20
2
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
I
C
B
1)
80
P
tot
T ≤ tbd
S
Operating junction temperature range
Storage junction temperature range
T
T
-65 ... 150
-65 ... 150
jo
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ tbd
Unit
K/W
2)
R
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4
4.7
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
30
µA
Collector-emitter cutoff current
= 13 V, V = 0
I
CES
V
CE
BE
-
-
-
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
2
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
160
250
400
DC current gain-
I = 13 mA, V = 3 V, pulse measured
h
FE
C
CE
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2008-07-04
2
BFP720
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
Transition frequency
-
45
-
-
GHz
pF
f
T
I = 13 mA, V = 3 V, f = 1 GHz
C
CE
-
-
-
0.06
Collector-base capacitance
= 3 V, f = 1 MHz, V = 0 ,
C
C
C
cb
ce
eb
V
CB
BE
emitter grounded
0.35
0.35
-
-
Collector emitter capacitance
V
= 3 V, f = 1 MHz, V = 0 ,
CE
BE
based grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
dB
Noise figure
NF
I = 5 mA, V = 3 V, f = 1.8 GHz, Z = Z
Sopt
-
-
0.5
0.85
-
-
C
CE
S
I = 5 mA, V = 3 V, f = 6 GHz, Z = Z
C
CE
1)
S
Sopt
Power gain
G
G
-
26
-
dB
dB
ms
ma
I = 13 mA, V = 3 V, Z = Z
,
C
CE
S
Sopt
Z = Z
L
, f = 1.8 GHz
Lopt
1)
-
18
-
Power gain, maximum available
I = 13 mA, V = 3 V, Z = Z ,
C
CE
S
Sopt
Z = Z
, f = 6 GHz
Lopt
L
2
Transducer gain
|S
|
dB
21e
I = 13 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
f = 6 GHz
-
-
24.5
15
-
-
2)
Third order intercept point at output
= 3 V, I = 10 mA, Z =Z =50 Ω, f = 1.8 GHz
IP
-
20.5
-
dBm
3
V
CE
C
S
L
1dB Compression point
P
-1dB
-
6
-
I = 13 mA, V = 3 V, Z =Z =50 Ω, f = 1.8 GHz
C
CE
S
L
1/2
| (k-(k²-1) ), G
21e 12e ms
1G
= |S
/ S
= |S
/ S
|
ma
21e 12e
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2008-07-04
3
Package SOT343
BFP720
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2008-07-04
4
BFP720
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2008-07-04
5
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