BFP720FH6327XTSA1 [INFINEON]
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSFP-4-1, 4 PIN;
| 型号： | BFP720FH6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSFP-4-1, 4 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总25页 (文件大小：1294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP720F
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-10-25
RF & Protection Devices
Edition 2012-10-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP720F
BFP720F, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2012-10-25, Revision 1.1
Page
Subjects (changes since previous revision)
This data sheet replaces the revision from 2009-03-13.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the data sheet have been expanded
and updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.1, 2012-10-25
BFP720F
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1
2
3
4
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.1
5.2
5.3
5.4
6
7
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Data Sheet
4
Revision 1.1, 2012-10-25
BFP720F
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4-2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 4-3 Permissible Pulse Load RthJS = f (tp). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 5-1 BFP720F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 5-2 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V. . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-3 Power Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-4 Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-5 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-6 Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-7 Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 Source Impedance Zopt for NFmin= f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-9 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-10 Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-2 Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-3 Marking Description (Marking BFP720F: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Data Sheet
5
Revision 1.1, 2012-10-25
BFP720F
List of Tables
List of Tables
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-2 AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
6
Revision 1.1, 2012-10-25
BFP720F
Product Brief
1
Product Brief
The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable
high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. The device is especially suited for mobile applications
in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz,
hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is
housed in a thin small flat plastic package with visible leads.
Data Sheet
7
Revision 1.1, 2012-10-25
BFP720F
Features
2
Features
•
•
•
•
•
•
•
High performance general purpose wideband LNA transistor
Operation voltage: 1.0 V to 4.0 V
Transistor geometry optimized for low current applications
26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
15 dB maximum available gain at 10 GHz and only 13 mA
0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
High linearity OP1dB = 7 dBm and OIP3 = 21 dBm at 5.5 GHz
and low current consumption of 13 mA
•
•
Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
Qualification report according to AEC-Q101 available
Applications
FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi,
Cordless phone, UMTS, WLAN, UWB, LNB
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
Pin Configuration
2 = E 3 = C
Marking
BFP720F
TSFP-4-1
1 = B
4 = E
R9s
Data Sheet
8
Revision 1.1, 2012-10-25
BFP720F
Maximum Ratings
3
Maximum Ratings
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Collector emitter voltage
VCEO
V
Open base
TA = 25 °C
TA = -55 °C
4.0
3.5
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
VCES
VCBO
VEBO
IC
–
–
–
–
–
–
–
–
–
13
V
E-B short circuited
Open emitter
–
13
V
–
1.2
25
V
Open collector
–
mA
mA
mW
°C
°C
Base current
IB
–
2
Total power dissipation1)
Junction temperature
Storage temperature
Ptot
TJ
–
100
150
150
TS ≤ 109 °C
–
TStg
-55
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point to the pcb
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2012-10-25
BFP720F
Thermal Characteristics
4
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Typ.
410
Unit
Note / Test Condition
Min.
Max.
Junction - soldering point1) RthJS
–
–
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
120
100
80
60
40
20
0
0
50
100
150
Ts [°C]
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.1, 2012-10-25
BFP720F
Thermal Characteristics
10
D= 0
D= .005
D= .01
D= .02
D= .05
D= .1
D= .2
D= .5
D=0
D=0.5
1
tp [sec]
Figure 4-2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp)
1000
D=0.5
D= .5
D= .2
D= .1
D= .05
D= .02
D= .01
D= .005
D= 0
D=0
100
tp [sec]
Figure 4-3 Permissible Pulse Load RthJS = f (tp)
Data Sheet
11
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter Symbol
Values
Unit Note / Test Condition
Min.
4
Typ.
4.7
–
Max.
–
Collector emitter breakdown voltage V(BR)CEO
V
IC = 1 mA, IB = 0 mA
Collector emitter cutoff current
Collector base cutoff current
Emitter base cutoff current
DC current gain
ICES
ICBO
IEBO
hFE
–
30
μA
nA
μA
V
V
V
CE = 13 V, VBE = 0 V
CB = 5 V, IE = 0 mA
EB = 0.5 V, IC = 0 mA
–
–
100
2
–
–
160
250
400
IC = 13 mA, VCE = 3 V
pulse measured
5.2
General AC Characteristics
Table 5-2 AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Typ.
45
Unit Note / Test Condition
Min.
Max.
Transition frequency
fT
–
–
GHz IC = 13 mA, VCE = 3 V
f = 1 GHz
Collector base capacitance
CCB
–
–
–
0.06
0.3
–
–
–
pF
pF
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
emitter grounded
Collector emitter capacitance
Emitter base capacitance
VCE = 3 V, VBE = 0 V
f = 1 MHz
base grounded
CCE
CEB
0.3
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
collector grounded
Data Sheet
12
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
C
E
E
VB
B
(Pin 1)
Bias-T
IN
Figure 5-1 BFP720F Testing Circuit
Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
34
37.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
23
29
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.4
28
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
6
22.5
–
–
Data Sheet
13
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
29
32.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
22.5
28.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.4
27.5
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
5.5
21.5
–
–
Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
26.5
29.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
22.5
27.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.45
25.5
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
5.5
20.5
–
–
Data Sheet
14
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
24
27.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
21.5
26
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.45
24
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
6
21
–
–
Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
23
26.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
21
24.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.5
23
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
6.5
21
–
–
Data Sheet
15
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
22
25.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
20.5
23
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.55
22
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
6
21
–
–
Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gms
Gms
–
–
20.5
23.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
18
20.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.6
19.5
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
6.5
21.5
–
–
Data Sheet
16
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
Low noise operation point
High linearity operation point
Gms
Gms
dB
–
–
19
21.5
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
15
16.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
0.7
15
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
7
21
–
–
Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum Power Gain
dB
Low noise operation point
High linearity operation point
Gma
Gma
–
–
14
15
–
–
IC = 5 mA
IC = 13 mA
Transducer Gain
Low noise operation point
High linearity operation point
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 13 mA
S21
S21
–
–
9.5
10.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
ZS = Zopt
IC = 5 mA
IC = 5 mA
NFmin
Gass
–
–
1.0
10.5
–
–
Linearity
1 dB gain compression point
3rd order intercept point
dBm
ZS = ZL = 50 Ω
IC = 13 mA
IC = 13 mA
OP1dB
OIP3
–
–
8
19.5
–
–
Notes
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results
Data Sheet
17
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
5.4
Characteristic Curves
50
45
40
35
30
25
20
15
10
5
3.00V
2.00V
1.50V
1.00V
0.50V
0
0
1
10
2
10
10
IC [mA]
Figure 5-2 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V
42
40
38
36
34
32
30
Gms
28
26
24
22
20
2
Gma
|S21
|
18
16
14
12
10
8
6
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 5-3 Power Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 13 mA
Data Sheet 18
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0
5
10
15
20
25
30
IC [mA]
Figure 5-4 Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz
40
38
0.15GHz
36
34
0.45GHz
32
30
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
26
24
3.50GHz
22
5.50GHz
20
18
16
10.00GHz
14
12
10
8
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VCE [V]
Figure 5-5 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz
Data Sheet
19
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
10 GHz
9 GHz
8 GHz
10 GHz
S11 @ 3V, 13mA
S11 @ 3V, 5mA
9 GHz
8 GHz
6 GHz
7 GHz
7 GHz
10 MHz
5 GHz
4 GHz
3 GHz
6 GHz
5 GHz
4 GHz
2 GHz
1 GHz
1 GHz
3 GHz
2 GHz
Figure 5-6 Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA
S22 @ 3V, 13mA
S22 @ 3V, 5mA
10 GHz
10 GHz
10 MHz
9 GHz
9 GHz
8 GHz
7 GHz
6 GHz
5 GHz
4 GHz
3 GHz
8 GHz
7 GHz
6 GHz
1 GHz
1 GHz
2 GHz
5 GHz
4 GHz
3 GHz
2 GHz
Figure 5-7 Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA
Data Sheet 20
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
5.5GHz
5.5GHz
Δ: Ic = 13mA
2.4GHz
1.9GHz
: Ic = 5mA
2.4GHz
1.9GHz
0.9GHz
0.45GHz
10GHz
z
Figure 5-8 Source Impedance Zopt for NFmin= f (f), VCE = 3 V, IC = 5 mA / 13 mA
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
f = 10GHz
0.5
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
Ic [mA]
Figure 5-9 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt
Data Sheet
21
Revision 1.1, 2012-10-25
BFP720F
Electrical Characteristics
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IC
= 13mA
IC = 5.0mA
0
2
4
6
8
10
f [GHz]
Figure 5-10 Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt
Note:The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
22
Revision 1.1, 2012-10-25
BFP720F
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP720F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitic and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 15 GHz using typical devices. The BFP720F SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
Data Sheet
23
Revision 1.1, 2012-10-25
BFP720F
Package Information TSFP-4-1
7
Package Information TSFP-4-1
0.0ꢀ
1.4
0.0ꢀ
0.04
0.2
0.ꢀꢀ
4
1
3
2
0.0ꢀ
0.0ꢀ
0.2
0.0ꢀ
0.ꢀ
0.1ꢀ
0.0ꢀ
0.ꢀ
TSFP-4-1, -2-PO V04
Figure 7-1 Package Outline
0.35
0.5
0.5
TSFP-4-1, -2-FP V04
Figure 7-2 Footprint
Figure 7-3 Marking Description (Marking BFP720F: R9s)
0.2
4
1.ꢀꢀ
0.7
Pin 1
TSFP-4-1, -2-TP V0ꢀ
Figure 7-4 Tape Dimensions
Data Sheet
24
Revision 1.1, 2012-10-25
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BFP720H6327XTSA1
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
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