BFP740E6327HTSA1 [INFINEON]
RF Small Signal Bipolar Transistor,;
| 型号： | BFP740E6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, |
| 文件： | 总28页 (文件大小：1137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP740
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2015-01-20
RF & Protection Devices
Edition 2015-01-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP740
BFP740, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2015-01-20, Revision 1.1
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2009-12-04. The reason for the new revision is to increase
the information content for the circuit designer. The performance parameters are now enlisted in a
table containing many relevant application frequencies. The measurements of typical devices have
been repeated and the device description has been expanded by adding several new characteristic
curves. For customers who bought the product prior to the issue of the new revision the old
specifications remain valid.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.1, 2015-01-20
BFP740
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1
2
3
4
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1
5.2
5.3
5.4
5.5
6
7
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
Revision 1.1, 2015-01-20
BFP740
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP740 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), VCE = Parameter in V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma,G
ms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . 23
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP740: R7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5
Revision 1.1, 2015-01-20
BFP740
List of Tables
List of Tables
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE = 3 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-4 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-8 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-9 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Data Sheet
6
Revision 1.1, 2015-01-20
BFP740
Product Brief
1
Product Brief
The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCEO = 4.0 V and currents up to IC = 45 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
45 GHz, hence the device offers high power gain at frequencies up to 11 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
Data Sheet
7
Revision 1.1, 2015-01-20
BFP740
Features
2
Features
•
Very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
•
•
•
•
•
OIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mA
High transition frequency fT = 44 GHz @ 3 V, 25 mA
NFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mA
Maximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mA
Low power consumption, ideal for mobile applications,
very common in WLAN Wi-Fi applications
3
2
4
1
•
•
Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
Qualification report according to AEC-Q101 available
Applications
As Low Noise Amplifier (LNA) in
•
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
•
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
•
•
•
Multimedia applications such as mobile/portable TV, CATV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
Pin Configuration
2 = E 3 = C
Marking
BFP740
SOT343
1 = B
4 = E
R7s
Data Sheet
8
Revision 1.1, 2015-01-20
BFP740
Maximum Ratings
3
Maximum Ratings
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Max.
Unit
Note / Test Condition
Min.
Collector emitter voltage
VCEO
V
Open base
TA = 25 °C
TA = -55 °C
–
–
4.0
3.5
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
VCES
VCBO
VEBO
IC
–
13
V
E-B short circuited
–
13
V
Open emitter
–
1.2
45
V
Open collector
–
mA
mA
mW
°C
°C
–
Base current
IB
–
4
–
Total power dissipation1)
Junction temperature
Storage temperature
Ptot
TJ
–
160
150
150
TS ≤ 100 °C
–
–
–
TStg
-55
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2015-01-20
BFP740
Thermal Characteristics
4
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Junction - soldering point1)
RthJS
–
310
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TS [°C]
Figure 4-1 Total Power Dissipation Ptot = f (TS)
Data Sheet
10
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Typ.
4.7
Unit
Note / Test Condition
Min.
Max.
Collector emitter breakdown voltage
Collector emitter leakage current
V(BR)CEO
ICES
4
–
V
IC = 1 mA, IB = 0
Open base
–
1
1
4001)
401)
nA
V
V
CE = 13 V, VBE = 0
CE = 5 V, VBE = 0
E-B short circuited
CB = 5V, IE = 0
Open emitter
EB = 0.5V, IC = 0
Open collector
CE = 3 V, IC = 25 mA
Collector base leakage current
Emitter base leakage current
DC current gain
ICBO
IEBO
hFE
–
1
401)
401)
400
nA
nA
V
–
1
V
160
250
V
Pulse measured
1) Maximum values not limited by the device but by the short cycle time ot the 100% test
5.2
General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Typ.
44
Unit
Note / Test Condition
Min.
Max.
Transition frequency
fT
–
–
GHz
pF
V
CE = 3 V, IC = 25 mA
f = 2 GHz
VCB = 3 V, VBE = 0
Collector base capacitance
CCB
–
–
–
0.08
0.35
0.45
–
–
–
f = 1 MHz
Emitter grounded
Collector emitter capacitance
Emitter base capacitance
CCE
pF
pF
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
CEB
VEB = 0.5 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
E
VB
B
Bias-T
(Pin 1)
IN
Figure 5-1 BFP740 Testing Circuit
Data Sheet
12
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
Table 5-3 AC Characteristics, VCE = 3 V, f = 0.45 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
31.5
28.5
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.45
26
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
6.5
22
–
–
IC = 15 mA
Table 5-4 AC Characteristics, VCE = 3 V, f = 0.9 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
28
27
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.45
24.5
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
8
22.5
–
–
IC = 15 mA
Table 5-5 AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
26
25
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.5
22.5
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
7
23
–
–
IC = 15 mA
Data Sheet
13
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
Table 5-6 AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
25
23.5
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.5
21.5
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
9
24.5
–
–
IC = 15 mA
Table 5-7 AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
24
22
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.55
20
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
8
24.5
–
–
IC = 15 mA
Table 5-8 AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
22
19
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.65
17
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
9
25.5
–
–
IC = 15 mA
Data Sheet
14
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
Table 5-9 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Power Gain
dB
Maximum power gain
Transducer gain
Gms
–
–
19.5
15
–
–
IC = 15 mA
IC = 15 mA
|S21|2
Minimum Noise Figure
Minimum noise figure
Associated gain
dB
NFmin
Gass
–
–
0.85
14
–
–
IC = 6 mA
IC = 6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
dBm ZS = ZL = 50 Ω
IC = 15 mA
OP1dB
OIP3
–
–
9
24.5
–
–
IC = 15 mA
Note:OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
5.4
Characteristic DC Diagrams
26
24
22
20
18
16
14
12
10
8
100μA
90μA
80μA
70μA
60μA
50μA
40μA
30μA
20μA
6
10μA
4
2
0
0
1
2
3
4
5
VCE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
103
102
100
101
102
IC [mA]
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
16
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
102
101
100
10−1
10−2
10−3
10−4
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
17
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
10−9
10−10
10−11
10−12
10−13
10−14
0.8
0.9
1
1.1
1.2
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
18
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
5.5
Characteristic AC Diagrams
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C.
48
44
4.00V
40
36
32
28
24
20
16
12
8
3.50V
3.00V
2.50V
2.00V
1.00V
4
0
0
10
20
30
40
50
IC [mA]
Figure 5-7 Transition Frequency fT = f (IC), VCE = Parameter in V
26
24
22
20
18
16
14
12
10
8
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
6
4
2
0
0
5
10
15
20
25
30
IC [mA]
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
Data Sheet
19
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
25
20
15
10
5
4
5
1
1
26
21
20
1
1.5
2
2.5
3
3.5
4
VCE [V]
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
25
20
15
8
6
5
4
3
2
1
6
5
4
3
2
1
0
10
5
4
3
2
1
0
2
1
0
2
2.5
3
3.5
4
VCE [V]
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Data Sheet
20
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
0.2
0.16
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VCB [V]
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
40
35
30
Gms
25
20
|S21|2
Gma
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 5-12 Gain Gma,
G
ms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA
Data Sheet
21
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
40
35
30
25
20
15
10
5
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0
0
5
10 15 20 25 30 35 40 45 50 55
IC [mA]
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
40
0.15GHz
35
30
25
20
15
10
5
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VCE [V]
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
1
1.5
0.5
2
10.0
10.0
9.0
8.0
0.4
9.0
8.0
7.0
3
7.0
6.0
0.3
4
6.0
0.2
5
5.0
0.03 to 10 GHz
5.0
4.0
0.1
10
0.1 0.2 0.3 0.4 0.5
4.0
1
1.5
2
3
4 5
0
0.03
0.03
3.0
−0.1
−10
2.0
3.0
−0.2
−5
−4
−0.3
1.0
−3
−0.4
1.0
2.0
−0.5
−2
−1.5
−1
6.0mA
15mA
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
0.45 to 10 GHz
4
0.2
5
3.5
2.4
1.9
4.5
0.1
10
1.5
0.9
2.4
1.9
3.5
1
4.5
1.5
0.45
3
5.5
0.1 0.2 0.3 0.4 0.5
1.5
2
4 5
0
0.9
0.45
5.5
−0.1
−10
8.0
8.0
−0.2
−5
−4
10.0
−0.3
10.0
−3
−0.4
−0.5
−2
6mA
15mA
−1.5
−1
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA
Data Sheet 23 Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
10.0
4
10.0
0.2
5
9.0
9.0
0.03 to 10 GHz
8.0
8.0
7.0
0.1
10
7.0
6.0
0.1 0.2 0.3 0.4 0.5
6.0
1
1.5
2
3
4 5
0
5.0
0.03
0.03
−10
4.0
5.0
−0.1
3.0
4.0
−0.2
−5
−4
2.0
1.0
3.0
1.0
−0.3
−3
2.0
−0.4
−0.5
−2
−1.5
−1
6.0mA
15mA
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA
1.8
1.6
1.4
1.2
1
0.8
0.6
IC = 15mA
IC = 6.0mA
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt
Data Sheet
24
Revision 1.1, 2015-01-20
BFP740
Electrical Characteristics
2.4
2.2
2
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.9GHz
f = 1.5GHz
f = 0.9GHz
f = 0.45GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
IC [mA]
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.9GHz
f = 1.5GHz
f = 0.9GHz
f = 0.45GHz
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
IC [mA]
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
25
Revision 1.1, 2015-01-20
BFP740
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP740 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
Revision 1.1, 2015-01-20
BFP740
Package Information SOT343
7
Package Information SOT343
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
SOT343-PO V08
Figure 7-1 Package Outline
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Type code
Date code (YM)
2005, June
Manufacturer
XYs
Pin 1
Figure 7-3 Marking Description (Marking BFP740: R7s)
0.2
4
2.15
Pin 1
1.1
SOT323-TP V02
Figure 7-4 Tape Dimensions
Data Sheet
27
Revision 1.1, 2015-01-20
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BFP740FESDE6327
RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSFP-4
INFINEON
BFP740FESDH6327XTSA1
RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSFP-4
INFINEON
BFP740FH6327XTSA1
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, TSFP-3
INFINEON
BFP740H6327XTSA1
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, X Band, Silicon Germanium, NPN, ROHS COMPLIANT PACKAGE-4
INFINEON
©2020 ICPDF网 联系我们和版权申明