BFP740E6327 [INFINEON]
RF Small Signal Bipolar Transistor,;
| 型号： | BFP740E6327 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, |
| 文件： | 总10页 (文件大小：589K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP740
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
3
2
1
4
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
G
= 27 dB at 1.8 GHz
ms
• Gold metallization for extra high reliability
• 150 GHz f -Silicon Germanium technology
T
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740
Marking
R7s
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
-
-
1Pb-containing package may be available upon special request
2009-12-04
1
BFP740
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T > 0°C
4
3.5
13
13
1.2
30
3
A
T ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
I
C
B
1)
160
P
tot
T ≤ 89°C
S
150
-65 ... 150
-65 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 380
Unit
K/W
2)
R
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
4
4.7
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
30
µA
Collector-emitter cutoff current
= 13 V, V = 0
I
CES
V
CE
BE
-
-
-
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
3
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
160
250
400
DC current gain
I = 25 mA, V = 3 V, pulse measured
h
FE
C
CE
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2009-12-04
2
BFP740
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
Transition frequency
-
42
-
GHz
f
T
I = 25 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.08
0.14 pF
Collector-base capacitance
= 3 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
F
cb
ce
eb
V
CB
BE
0.24
0.44
-
-
Collector emitter capacitance
V
= 3 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
dB
Noise figure
I = 8 mA, V = 3 V, f = 1.8 GHz, Z = Z
Sopt
-
-
0.5
0.85
-
-
C
CE
S
I = 8 mA, V = 3 V, f = 6 GHz, Z = Z
C
CE
S
Sopt
1)
Power gain, maximum stable
G
G
-
27
-
dB
dB
ms
ma
I = 25 mA, V = 3 V, Z = Z
,
,
C
CE
S
Sopt
Z = Z
L
, f = 1.8 GHz
Lopt
1)
-
17
-
Power gain, maximum available
I = 25 mA, V = 3 V, Z = Z
C
CE
S
Sopt
Z = Z
, f = 6 GHz
Lopt
L
2
Transducer gain
|S
|
dB
21e
I = 25 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
f = 6 GHz
-
-
24.5
13.5
-
-
2)
Third order intercept point at output
= 3 V, I = 25 mA, Z =Z =50 Ω, f = 1.8 GHz
IP
-
25
-
dBm
3
V
CE
C
S
L
1dB Compression point at output
P
-1dB
-
11
-
I = 25 mA, V = 3 V, Z =Z =50 Ω, f = 1.8 GHz
C
CE
S
L
1/2
| (k-(k²-1) ), G = |S
ms 21e 12e
1G
= |S
/ S
/ S
|
ma
21e 12e
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2009-12-04
3
BFP740
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website: www.infineon.com/rf.models. Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 12 GHz using typical
devices. The BFP740 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
2009-12-04
4
BFP740
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
180
mW
K/W
140
120
100
80
D = 0,5
0,2
10 2
0,1
0,05
0,02
0,01
0,005
0
60
40
20
10 1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
15 30 45 60 75 90 105 120
150
T
tp
S
Permissible Pulse Load
Collector-base capacitance C = ƒ (V )
cb CB
P
/P
= ƒ(t )
f = 1 MHz
totmax totDC
p
10 2
0.2
0.18
0.16
0.14
0.12
0.1
-
D = 0
10 1
0.005
0.01
0.02
0.05
0.1
0.08
0.06
0.04
0.02
0.2
0.5
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
0
0
2
4
6
8
10
12
T
VCB [V]
P
2009-12-04
5
BFP740
Third order Intercept Point IP = ƒ (I )
Transition frequency f = ƒ(I )
3
C
T
C
(Output, Z = Z = 50 Ω )
f = 2 GHz
V = parameter
CE
S
L
V
= parameter, f = 1.8 GHz
CE
30
50
27
24
21
18
15
12
9
45
40
35
30
25
20
15
10
5
4.00V
3.00V
2V to 4V
2.00V
1.00V
1.00V
0.75V
0.50V
6
3
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
IC [mA]
IC [mA]
Power gain G , G = ƒ (f)
Power gain G , G = ƒ (I )
ma
ms
ma
ms
C
V
= 3 V, I = 25 mA
V
= 3 V
CE
C
CE
f = parameter
55
34
32
30
28
26
24
22
20
18
16
14
12
10
50
45
40
35
30
25
20
15
10
5
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
Gms
5.00GHz
6.00GHz
Gma
2
|S21|
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
f
[GHz]
IC [mA]
2009-12-04
6
BFP740
Power gain G , G = ƒ (V )
Noise figure F = ƒ(I )
C
ma
ms
CE
I = 25 mA
V
= 3V, f = parameter
C
CE
f = parameter
Z = Z
S
Sopt
36
32
28
24
20
16
12
8
2
1.8
1.6
1.4
1.2
1
0.90GHz
1.80GHz
f = 6GHz
2.40GHz
3.00GHz
f = 5GHz
f = 3GHz
f = 1.8GHz
f = 0.9GHz
4.00GHz
5.00GHz
6.00GHz
0.8
0.6
0.4
0.2
4
0
0
0
0
0.5
1
1.5
2
2.5
VCE [V]
3
3.5
4
4.5
5
5
10
15
20
25
30
Ic [mA]
Noise figure F = ƒ(I )
Noise figure F = ƒ(f)
C
V
= 3V, f = 1.8 GHz
V
= 3 V, Z = Z
CE
CE S Sopt
2
1.4
1.8
1.2
1
1.6
1.4
1.2
1
ZS = 50Ω
S = ZSopt
Z
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
IC
= 25mA
IC = 8mA
0
5
10
15
Ic [mA]
20
25
30
0
1
2
3
4
5
6
7
f [GHz]
2009-12-04
7
BFP740
Source impedance for min.
noise figure vs. frequency
V
= 3 V, I = 8 mA / 25 mA
CE
C
1
1.5
0.5
2
0.4
Ic = 8mA
3
0.3
4
0.2
5
2.4GHz
1.8GHz
3GHz
0.1
0
10
4GHz
0.9GHz
0.2
0.4
1
2
4
6GHz
5GHz
−0.1
−10
6GHz
−0.2
−0.3
−0.4
−5
−4
Ic = 25mA
−3
−0.5
−2
−1.5
−1
2009-12-04
8
Package SOT343
BFP740
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2009-12-04
9
BFP740
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2009-12-04
10
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