BFP720FESD [INFINEON]
Robust High Performance Low Noise Bipolar RF Transistor; 稳健的高性能低噪声双极RF晶体管
| 型号： | BFP720FESD |
| 厂家： | 
Infineon |
| 描述： | Robust High Performance Low Noise Bipolar RF Transistor |
| 文件： | 总29页 (文件大小：1928K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP720FESD
Robust High Performance Low Noise Bipolar RF Transistor
Data Sheet
Revision 1.1, 2010-06-29
RF & Protection Devices
Edition 2010-06-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP720FESD
BFP720FESD, Robust High Performance Low Noise Bipolar RF Transistor
Revision History: 2010-06-29, Revision 1.1
Previous Revision 1.0:
Page
10
Subjects (major changes since last revision)
Icmax changed from 25mA to 30mA, PRFin value added
Characteristic DC diagrams and OIP3 diagram added
18-21
Trademarks of Infineon Technologies AG
BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™,
SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-03-22
Data Sheet
3
Revision 1.1, 2010-06-29
BFP720FESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1
2
3
4
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.1
5.2
5.3
5.4
5.5
6
7
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
4
Revision 1.1, 2010-06-29
BFP720FESD
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BFP720FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 20
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 21
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 23
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . 23
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 5 / 15 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 5 / 15 mA . . . . . . . . . 24
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 5 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . 26
Figure 20 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 21 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 22 Marking Description (Marking BFP720FESD: T3s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 23 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
5
Revision 1.1, 2010-06-29
BFP720FESD
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
6
Revision 1.1, 2010-06-29
Robust High Performance Low Noise Bipolar RF Transistor
BFP720FESD
1
Features
•
Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise figure typical at 2.4 GHz,
0.8 dB at 10 GHz, 5 mA
3
•
•
•
2
1
4
•
26 dB maximum gain (Gms) typical at 2.4 GHz,
22 dB at 5.5 GHz, 15 mA
•
•
21 dBm OIP3 typical at 5.5 GHz, 15 mA
Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
•
Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads
Applications
As Low Noise Amplifier (LNA) in
•
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
•
•
•
•
Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
3G/4G UMTS/LTE mobile phone applications
Multimedia applications such as mobile/portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCO's and buffer amplifier.
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
Pin Configuration
Marking
BFP720FESD TSFP-4-1
1 = B
2 = E
3 = C
4 = E
T3s
Data Sheet
7
Revision 1.1, 2010-06-29
BFP720FESD
Product Brief
2
Product Brief
The BFP720FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal
protection circuits, which enhance robustness against ESD and high RF input power strongly. The device
combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide
range of wireless applications.
The BFP720FESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.2 V.
Table 1
Quick Reference DC Characteristics at TA = 25°C
Symbol Values
Parameter
Unit Note / Test Condition
Min.
Typ.
Max.
Collector emitter breakdown voltage V(BR)CEO
4.2
4.7
–
V
IC = 1 mA, IB = 0
Open base
Collector base leakage current
ICBO
–
–
400
nA
V
CB = 2 V, IE = 0
Open emitter
VCE = 3 V, IC = 15 mA
DC current gain
hFE
IC
160
–
250
–
400
30
Collector current
mA
Total power dissipation
Ptot
–
–
100
mW TS ≤ 109 °C
Data Sheet
8
Revision 1.1, 2010-06-29
BFP720FESD
Product Brief
Table 2
Quick Reference AC Characteristics at TA = 25°C
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Transition frequency
fT
–
45
–
GHz
dB
VCE = 3 V, IC = 15mA
f = 1 GHz
VCE = 3 V, f = 2.4 GHz
Maximum Power Gain
Low noise operation point
High linearity operation point
Transducer Gain
Gms
Gms
–
–
22.5
26
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
dB
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
S21
S21
–
–
20
–
–
23.5
dB
NFmin
Gass
–
–
0.6
21
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm ZS = ZL = 50 Ω
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
22
IC = 15 mA
VCE = 3 V, f = 5.5 GHz
Maximum Power Gain
Low noise operation point
High linearity operation point
Transducer Gain
dB
Gms
Gms
–
–
19.5
22
–
–
IC = 5 mA
IC = 15 mA
dB
dB
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
Low noise operation point
High linearity operation point
Minimum Noise Figure
Minimum noise figure
Associated gain
S21
S21
–
–
15
17
–
–
NFmin
Gass
–
–
0.8
16
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm ZS = ZL = 50 Ω
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
21
IC = 15 mA
Data Sheet
9
Revision 1.1, 2010-06-29
BFP720FESD
Maximum Ratings
3
Maximum Ratings
Table 3
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Symbol
Values
Max.
Unit
Note / Test Condition
Min.
Collector emitter voltage
Collector base voltage1)
Collector emitter voltage2)
VCEO
Open base
–
–
4.2
3.7
V
V
TA = 25°C
TA = -55 °C
VCBO
Open emitter
–
–
4.9
4.4
V
V
TA = 25°C
TA = -55 °C
VCES
Emitter / base shortened
–
4.2
3.7
3
V
TA = 25°C
–
V
TA = -55 °C
Base current3)
IB
-10
–
mA
mA
dBm
kV
–
Collector current
RF input power
ESD stress pulse4)
IC
30
21
2
–
PRFin
VESD
–
–
-2
HBM, all pins, acc. to
JESD22-A114
Total power dissipation5)
Junction temperature
Storage temperature
Ptot
TJ
–
100
150
150
mW
°C
TS ≤ 109 °C
–
–
–
TStg
-55
°C
1) Low VCBO due to integrated protection circuits.
2) VCES is identical to VCEO due to integrated protection circuits.
3) Sustainable reverse bias current is high due to integrated protection circuits.
4) ESD robustness is high due to integrated protection circuits.
5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
10
Revision 1.1, 2010-06-29
BFP720FESD
Thermal Characteristics
4
Thermal Characteristics
Table 4
Thermal Resistance
Symbol
Parameter
Values
Typ.
405
Unit
Note / Test Condition
Min.
Max.
Junction - soldering point1) RthJS
–
–
K/W
–
1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TS [°C]
Figure 1
Total Power Dissipation Ptot = f (Ts)
Data Sheet
11
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note / Test Condition
Min.
Max.
Collector emitter breakdown voltage V(BR)CEO
4.2
4.7
–
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
ICES
ICBO
IEBO
hFE
–
–
400
400
10
nA
nA
μA
V
CE = 2 V, VBE = 0
Emitter/base shortened
CB = 2 V, IE = 0
Open emitter
EB = 0.5 V, IC = 0
Open collector
CE = 3 V, IC = 15 mA
Pulse measured
–
–
V
–
–
V
160
250
400
V
5.2
General AC Characteristics
Table 6
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Values
Typ.
45
Unit Note / Test Condition
Max.
Transition frequency
fT
–
–
GHz
pF
V
CE = 3 V, IC = 15 mA
f = 1 GHz
VCB = 3 V, VBE = 0 V
Collector base capacitance
CCB
–
0.05
0.35
0.4
–
–
–
f = 1 MHz
Emitter grounded
Collector emitter capacitance
Emitter base capacitance
CCE
–
–
pF
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
CEB
VEB = 0.4 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
12
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
C
E
E
VB
B
(Pin 1)
Bias-T
IN
Figure 2
BFP720FESD Testing Circuit
Table 7
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
34.5
38.5
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
23.5
30.5
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.5
29
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
6
–
–
21.5
Data Sheet
13
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
Table 8
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
30
–
–
IC = 5 mA
33.5
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
23
30
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.5
–
–
IC = 5 mA
27.5
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
6
–
–
21.5
Table 9
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
26.5
30.5
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
22.5
28.5
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.55
25.5
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
6.5
22
–
–
Data Sheet
14
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
Table 10
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
24.5
28
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
21.5
26
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.55
23.5
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
22
Table 11
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
23.5
27
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
21
25
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.55
22.5
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
22
Data Sheet
15
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
Table 12
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
22.5
26
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
20
–
–
23.5
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.6
21
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
22
Table 13
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
21
–
–
IC = 5 mA
24.5
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
18
–
–
20.5
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.65
19
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
21.5
Data Sheet
16
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
Table 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gms
Gms
–
–
19.5
22
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
15
17
–
–
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
0.8
16
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
7
–
–
21
Table 15
AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Values
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
dB
Gma
Gma
–
–
14
15
–
–
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
dB
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
S21
S21
–
–
9
–
–
11
IC = 15 mA
ZS = Zopt
dB
NFmin
Gass
–
–
1.3
10
–
–
IC = 5 mA
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
1 dB gain compression point
3rd order intercept point
OP1dB
OIP3
–
–
6
–
–
20
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
17
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
35
30
25
20
15
10
5
IB=165µA
IB=145µA
IB=125µA
IB=105µA
IB=85µA
IB=65µA
IB=45µA
IB=25µA
IB=5µA
0
0.0
0.5
1.0
1.5
2.0
2.5
CE [V]
3.0
3.5
4.0
4.5
V
Figure 3
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
1000
100
0.1
1
10
100
IC [mA]
Figure 4
DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
18
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
V
BE [V]
Figure 5
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 6
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
19
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
0.3
0.4
0.5
0.6
0.7
0.8
V
EB [V]
Figure 7
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
20
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
50
45
40
35
30
25
20
15
10
5
4.00V
3.00V
2.50V
2.00V
1.00V
0
0
5
10
15
20
25
30
IC [mA]
Figure 8
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
25
20
15
10
5
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
3V, 5.5GHz
0
−5
0
5
10
15
20
25
IC [mA]
Figure 9
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Data Sheet
21
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VCB [V]
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
50
45
40
35
G
ms
30
25
20
G
ma
2
|S |
21
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA
Data Sheet
22
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
43
40
37
34
31
28
25
22
19
16
13
10
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0
5
10
15
20
25
30
IC [mA]
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
43
40
0.15GHz
37
34
31
28
25
22
19
16
13
10
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
0
1
2
3
4
5
VCE [V]
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
Data Sheet
23
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
3
10 GHz
2
.
0
10 MHz
5
-
2
-
Ic = 5 mA
Step 1 GHz
Ic = 15 mA
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 5 / 15 mA
2
4
.
0
3
2.4 GHz
2
.
0
5
5.5 GHz
0
1
0.45 GHz
10 GHz
5
-
4
-
3
-
4
.
0
-
2
-
6
.
0
Ic = 5 mA
-
8
.
0
Ic = 15 mA
-
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 5 / 15 mA
Data Sheet
24
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
2
3
10 GHz
0
0
1
10 MHz
1
-
3
-
2
-
Ic = 5 mA
8
.
0
Step 1 GHz
Ic = 15 mA
-
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 5 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I = 15mA
ICC = 5.0mA
0.4
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 5 / 15 mA, ZS = Zopt
Data Sheet
25
Revision 1.1, 2010-06-29
BFP720FESD
Electrical Characteristics
3
2.8
2.6
2.4
2.2
2
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 0.45GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
Ic [mA]
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
3
2.8
2.6
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 0.45GHz
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
Ic [mA]
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C
Data Sheet
26
Revision 1.1, 2010-06-29
BFP720FESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP720FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP720FESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
27
Revision 1.1, 2010-06-29
BFP720FESD
Package Information TSFP-4-1
7
Package Information TSFP-4-1
±0.05
1.4
±0.05
±0.04
0.55
0.2
4
1
3
2
±0.05
±0.05
0.2
0.15
±0.05
0.5
±0.05
0.5
TSFP-4-1, -2-PO V04
Figure 20 Package Outline
0.35
0.5
0.5
TSFP-4-1, -2-FP V04
Figure 21 Package Foot Print
Manufacturer
XYs
Marking
Pin 1
Figure 22 Marking Description (Marking BFP720FESD: T3s)
0.2
4
Pin 1
1.55
0.7
TSFP-4-1, -2-TP V05
Figure 23 Tape Dimensions
Data Sheet
28
Revision 1.1, 2010-06-29
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BFP720FH6327XTSA1
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSFP-4-1, 4 PIN
INFINEON
BFP720H6327XTSA1
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
INFINEON
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