AUIRFSL8409 [INFINEON]
AUTOMOTIVE GRADE; 汽车级型号: | AUIRFSL8409 |
厂家: | Infineon |
描述: | AUTOMOTIVE GRADE |
文件: | 总14页 (文件大小:404K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AUIRFB8409
AUIRFS8409
AUIRFSL8409
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
D
S
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
40V
RDS(on) (SMD) typ. 0.97mΩ
max. 1.2mΩ
G
ID
409A
(Silicon Limited)
ID
195A
(Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombinetomake
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
D
D
D
S
S
S
D
G
D
G
G
D2Pak
TO-220AB
TO-262
Applications
AUIRFS8409
AUIRFB8409
AUIRFSL8409
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
G
Gate
D
Drain
S
Source
DC-DCApplications
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tube
Tube
Quantity
50
AUIRFB8409
AUIRFS8409
AUIRFS8409
AUIRFSL8409
TO-220
D2-Pak
D2-Pak
TO-262
AUIRFB8409
AUIRFS8409
AUIRFS8409TRL
AUIRFSL8409
50
800
50
Tape and Reel Left
Tube
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
409
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
289
A
195
1524
375
2.5
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
± 20
VGS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
EAS
760
mJ
1360
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
See Fig. 14, 15, 24a, 24b
A
Repetitive Avalanche Energy
EAR
mJ
-55 to + 175
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com © 2013 International Rectifier
April 30, 2013
1
AUIRFB/S/SL8409
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.40
–––
62
Units
°C/W
Rθ
Rθ
Rθ
Junction-to-Case
JC
CS
JA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient (PCB Mount)
0.50
–––
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
40 ––– –––
––– 0.014 ––– V/°C Reference to 25°C, ID = 1.0mA
Conditions
VGS = 0V, ID = 250µA
V
RDS(on) SMD
––– 0.97 1.2
VGS = 10V, ID = 100A
VGS = 10V, ID = 100A
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
Static Drain-to-Source On-Resistance
mΩ
V
R
DS(on) TO-220
VGS(th)
IDSS
–––
2.2
1.0
1.3
3.9
1.0
Gate Threshold Voltage
–––
Drain-to-Source Leakage Current
––– –––
µA
––– ––– 150
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
V
GS = -20V
RG
–––
2.1
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
150 ––– –––
S
VDS = 10V, ID = 100A
Total Gate Charge
––– 300 450
ID = 100A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
77
98
–––
–––
VDS =20V
nC
VGS = 10V
Qsync
––– 202 –––
––– 32 –––
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
td(on)
tr
Rise Time
––– 105 –––
––– 160 –––
––– 100 –––
––– 14240 –––
––– 2130 –––
––– 1460 –––
––– 2605 –––
––– 2920 –––
ID = 30A
ns
td(off)
Turn-Off Delay Time
RG = 2.7Ω
tf
Fall Time
V
V
GS = 10V
GS = 0V
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
pF ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
––– ––– 409
A
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
VSD
––– ––– 1576
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
––– 0.86 1.2
V
dv/dt
trr
–––
–––
–––
–––
–––
–––
2.7
52
52
97
97
2.3
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
–––
–––
–––
–––
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
ns
IF = 100A
di/dt = 100A/µs
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.15mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
.
.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
ISD ≤ 100A, di/dt ≤ 990A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
www.irf.com © 2013 International Rectifier
April 30, 2013
2
AUIRFB/S/SL8409
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 100A
= 10V
D
V
GS
T
= 25°C
J
T = 175°C
J
V
= 25V
DS
≤
60µs PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 100A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
V
V
= 32V
= 20V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
1
10
, Drain-to-Source Voltage (V)
100
0
50 100 150 200 250 300 350 400
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
10msec
Limited by package
T
= 25°C
J
1
1
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
47
46
45
44
43
42
41
40
500
400
300
200
100
0
Id = 1.0mA
Limited By Package
-60 -40 -20 0 20 40 60 80 100120140160180
25
50
75
100
125
150
175
T , Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
3500
3000
2500
2000
1500
1000
500
I
D
V
= 0V to 32V
DS
TOP
26A
52A
BOTTOM 100A
0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com © 2013 International Rectifier
April 30, 2013
4
AUIRFB/S/SL8409
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
800
700
600
500
400
300
200
100
0
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
6.0
4.0
2.0
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
= 100A
D
T
= 125°C
I
I
I
= 250µA
= 1.0mA
= 1.0A
J
D
D
D
T
= 25°C
J
4
6
8
10
12 14 16
18 20
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
V
Gate -to -Source Voltage (V)
GS,
Fig 16. On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
12
300
250
200
150
100
50
I = 60A
I = 60A
F
F
V
= 34V
V
= 34V
R
R
10
8
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
260
220
180
140
100
60
12
10
8
I = 100A
F
I = 100A
F
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
www.irf.com © 2013 International Rectifier
April 30, 2013
6
AUIRFB/S/SL8409
6.0
4.0
2.0
0.0
V
= 5.5V
= 6.0V
= 7.0V
= 8.0V
=10V
GS
V
GS
V
GS
V
GS
V
GS
0
200
400
600
800 1000 1200
I , Drain Current (A)
D
Fig 22. Typical On-Resistance vs. Drain Current
7
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
•
dv/dt controlled by RG
• Driver same type as D.U.T.
RG
+
-
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier
Fig 26b. Gate Charge Waveform
April 30, 2013
8
AUIRFB/S/SL8409
TO-220ABPackageOutline
Dimensions are shown in millimeters (inches)
TO-220ABPartMarkingInformation
PartNumber
IR Logo
AUIRFB8409
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
YWWA
XX or XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUIRFSL8409
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2013 International Rectifier
April 30, 2013
10
AUIRFB/S/SL8409
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRFS8409
Date Code
Y= Year
WW= Work Week
IR Logo
YWWA
A=Automotive,LeadFree
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
www.irf.com © 2013 International Rectifier
April 30, 2013
12
AUIRFB/S/SL8409
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D2 PAK
TO-220
MSL1
N/A
TO-262
Class M4 (+/- 600V)††
AEC-Q101-002
Machine Model
Class H3A (+/- 6000V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
13
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB/S/SL8409
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailureoftheIR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
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IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
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www.irf.com © 2013 International Rectifier
April 30, 2013
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相关型号:
AUIRFU5505
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3
INFINEON
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