AUIRFU4104 [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRFU4104 |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总14页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97452
AUIRFR4104
AUTOMOTIVE GRADE
AUIRFU4104
HEXFET® Power MOSFET
Features
Advanced Process Technology
D
S
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
V(BR)DSS
40V
5.5m
RDS(on) max.
ID (Silicon Limited)
ID (Package Limited)
Ω
G
119A
42A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive appli-
cations and a wide variety of other applications.
S
S
D
G
G
D-Pak
AUIRFR4104
I-Pak
AUIRFU4104
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
119
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Units
I
I
I
I
@ T = 25°C
C
D
D
D
84
A
@ T = 100°C
C
42
@ T = 25°C
C
480
DM
140
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
0.95
Linear Derating Factor
± 20
V
Gate-to-Source Voltage
GS
EAS
AS (tested )
145
310
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
-55 to + 175
T
T
Operating Junction and
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.05
40
Units
Rθ
JC
Rθ
JA
Rθ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/10/2010
AUIRFR/U4104
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
4.3
–––
–––
–––
–––
–––
–––
5.5
4.0
VGS = 10V, ID = 42A
VDS = VGS, ID = 100µA
VDS = 10V, ID = 42A
VGS(th)
V
S
gfs
IDSS
Forward Transconductance
58
–––
20
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
59
19
24
17
69
37
36
4.5
89
ID = 42A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
nC VDS = 32V
VGS = 10V
VDD = 20V
ID = 42A
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 6.8 Ω
VGS = 10V
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 2950 –––
Coss
Output Capacitance
–––
–––
660
370
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
––– 2130 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
590
850
–––
–––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
480
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
28
1.3
42
36
V
T = 25°C, I = 42A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 42A, VDD = 20V
J F
rr
di/dt = 100A/µs
Q
t
24
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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AUIRFR/U4104
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
I-PAK
MSL1
MSL1
Moisture Sensitivity Level
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR/U4104
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
100
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
1
10
1
100
1
0.1
1
1
10
1
100
1
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
T
= 25°C
J
T
= 175°C
J
100
80
60
40
20
0
T
= 175°C
J
100
10
1
T = 25°C
J
V
= 20V
DS
V
= 10V
DS
60µs PULSE WIDTH
380µs PULSE WIDTH
4
6
8
10
0
20
40
60
80
100
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. DrainCurrent
4
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AUIRFR/U4104
20
16
12
8
5000
4000
3000
2000
1000
0
V
= 0V,
= C
f = 1 MHZ
GS
I = 42A
D
V
= 32V
C
C
C
+ C , C
SHORTED
DS
VDS= 20V
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
4
0
0
20
Q
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
100.0
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
AUIRFR/U4104
2.0
1.5
1.0
0.5
120
I
= 42A
D
LIMITED BY PACKAGE
V
= 10V
GS
100
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.5067
0.000414
τ
0.05
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.02
0.01
0.5428
0.004081
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U4104
15V
600
500
400
300
200
100
0
I
D
TOP
9.2A
DRIVER
+
L
13A
BOTTOM 42A
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
Charge
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
V
GS
T , Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR/U4104
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
∆
assuming
Tj = 25°C due to
0.01
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
10
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
160
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
TOP
BOTTOM 1% Duty Cycle
= 42A
Single Pulse
I
Purely a thermal phenomenon and failure occurs at a
D
120
80
40
0
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRFR/U4104
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRFR/U4104
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AUFR4104
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4104
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
PartNumber
AUFU4104
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFR/U4104
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.16mH
This value determined from sample failure population, starting
TJ = 25°C, L = 0.16mH, RG = 25Ω, IAS = 42A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at TJ approximately 90°C.
θ
80% VDSS
.
12
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AUIRFR/U4104
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFR4104
Dpak
Ipak
Tube
75
AUIRFR4104
AUIRFR4104TR
AUIRFR4104TRL
AUIRFR4104TRR
AUIRFU4104
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
2000
3000
3000
75
AUIRFU4104
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13
AUIRFR/U4104
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
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