AUIRFU540Z [INFINEON]
Automatic Voltage Regulator; 自动电压调节器
| 型号： | AUIRFU540Z |
| 厂家： | 
Infineon |
| 描述： | Automatic Voltage Regulator |
| 文件： | 总12页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRFR540Z
AUIRFU540Z
HEXFET® Power MOSFET
VDSS
100V
22.5m
28.5m
35A
D
S
D
RDS(on) typ.
S
max.
S
D
G
G
G
ID
D-Pak
I-Pak
IRFR540ZPbF
IRFU540ZPbF
Applications
l
l
l
l
Automatic Voltage Regulator (AVR)
Solenoid Injection
Body Control
Low Power Automotive Applications
G
Gate
D
Drain
S
Source
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRFR540Z
Dpak
AUIRFR540Z
AUIRFR540ZTR
AUIRFR540ZTRL
AUIRFR540ZTRR
AUIRFU540Z
AUIRFU540Z
IPak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
35
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
25
A
Pulsed Drain Current
IDM
140
PD @TC = 25°C
Power Dissipation
91
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
0.61
± 20
VGS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
39
mJ
EAS (tested )
IAR
75
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
TJ
Operating Junction and
-55 to + 175
300
TSTG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.64
40
Units
Junction-to-Case
R
R
R
JC
JA
JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
Typ.
–––
0.092
22.5
–––
–––
–––
–––
–––
–––
39
Max.
–––
–––
28.5
4.0
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
m
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
VGS = 10V, ID = 21A
VDS = VGS, ID = 50μA
VDS = 25V, ID = 21A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate Threshold Voltage
V
Forward Transconductance
28
–––
20
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
μA
250
200
-200
59
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
nC
VGS = -20V
Qg
ID = 21A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
11
–––
–––
–––
–––
–––
–––
–––
VDS = 50V
12
VGS = 10V
14
VDD = 50V
Rise Time
42
ID = 21A
td(off)
tf
Turn-Off Delay Time
Fall Time
43
ns
RG = 13
VGS = 10V
34
D
S
LD
Internal Drain Inductance
4.5
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
G
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
1690
180
100
720
110
190
–––
–––
–––
–––
–––
–––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
pF
ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
Continuous Source Current
(Body Diode)
–––
–––
35
A
ISM
Pulsed Source Current
(Body Diode)
–––
–––
140
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
32
1.3
48
60
V
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VDD = 50V
di/dt = 100A/μs
ns
nC
Qrr
ton
40
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax, starting TJ = 25°C, L = 0.17mH
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
RG = 25, IAS = 21A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
R is measured at TJ approximately 90°C
www.irf.com © 2012 International Rectifier
July 18, 2012
2
AUIRFR/U540Z
1000
100
10
1000
100
10
VGS
15V
VGS
15V
60μs PULSE WIDTH
TOP
TOP
Tj = 25°C
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
60μs PULSE WIDTH
Tj = 175°C
4.5V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
70
T
T
= 25°C
J
60
50
40
30
20
10
0
T
= 175°C
J
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
380μs PULSE WIDTH
V
= 25V
DS
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
0
10
20
30
40
50
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Typical Forward Transconductance
Fig 3. Typical Transfer Characteristics
vs. Drain Current
3
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
3000
2500
2000
1500
1000
500
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 21A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
VDS= 50V
VDS= 20V
C
= C + C
ds
oss
gd
C
iss
4
C
C
oss
0
rss
0
0
10
20
30
40
50
60
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
100μsec
T
= 175°C
J
1msec
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com © 2012 International Rectifier
July 18, 2012
4
AUIRFR/U540Z
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
I
= 21A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
T
, CaseTemperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
Case Temperature
vs. Temperature
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
Ri (°C/W) i (sec)
0.1
0.05
J J
C
2.626
0.000052
0.02
0.01
11
2 2
33
0.6611 0.001297
0.7154 0.01832
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
15V
160
120
80
40
0
I
D
TOP
6.5A
9.4A
21A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
I
= 1.0mA
G
D
ID = 250μA
= 50μA
I
D
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
0
1K
T
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
www.irf.com © 2012 International Rectifier
July 18, 2012
6
AUIRFR/U540Z
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
40
30
20
10
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 21A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs. Temperature
7
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com © 2012 International Rectifier
July 18, 2012
8
AUIRFR/U540Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
IR Logo
AUFR540Z
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
Part Number
IR Logo
AUFU540Z
Date Code
Y= Year
WW= Work Week
YWWA
A= Automotive, LeadFree
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/
package/
www.irf.com © 2012 International Rectifier
July 18, 2012
10
AUIRFR/U540Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Qualification Information†
Automotive
(per AEC-Q101)†
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
D-PAK
I-PAK
MSL1
MSL1
Moisture Sensitivity Level
Class M2 (+/- 200V)††
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
11
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
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product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.
Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
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regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com © 2012 International Rectifier
July 18, 2012
12
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