AUIRFU8401_技术文档

AUIRFR8401

AUIRFU8401

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

V_DSS

40V

D

 Advanced Process Technology

 New Ultra Low On-Resistance

175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

R_{DS(on) typ.}

3.2m

4.25m

100A

max

G

I_{D (Silicon Limited)}

S

I_{D (Package Limited)}

100A

Description

Specifically designed for Automotive applications, this HEXFET^®Power

MOSFETs utilizes the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are

well known for, provides the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other applications.

I-Pak

AUIRFU8401

D-Pak

AUIRFR8401

Applications

G

D

S

Electric Power Steering (EPS)

 Battery Switch

Gate

Drain

Source

 Start /Stop Micro Hybrid

 Heavy Loads

DC-DC Converter

Ordering Information

Standard Pack

Form

Tube

Complete Part Number

Base part number Package Type

Quantity

75

2000

3000

75

AIRFR8401

D^-Pak

AUIRFR8401

AUIRFR8401TR

AUIRFR8401TRL

AUIRFR8401TRR

AUIRFU8401

Tape and Reel

Tape and Reel Left

Tape and Reel Right

Tube

AUIRFU8401

I-Pak

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-

tions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

Max.

100

71

100

400

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

A

P_D@T_C= 25°C

Maximum Power Dissipation 

Linear Derating Factor 

Gate-to-Source Voltage

Operating Junction and

79

0.53

± 20

-55 to + 175

W

W/°C

V

V_GS

T_J

T_STG

°C

Storage Temperature Range

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

1

www.irf.com

May 06, 2013

AUIRFR_U8401

Avalanche Characteristics

E_{AS (Thermally limited)}

E_{AS (tested)}

I_AR

67

94

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

mJ

A

mJ

See Fig 14, 15, 24a, 24b

E_AR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.9

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Junction-to-Ambient (PCB Mounted)

Junction-to-Ambient 

°C/W

50

110

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

40 ––– –––

––– 0.035 ––– V/°C Reference to 25°C, I_D= 1.0mA

Conditions

V_GS= 0V, I_D= 250µA

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V

V_(BR)DSS/T_J

R_DS(on)

V_GS(th)

–––

2.2

3.2

–––

4.25

3.9

1.0

150

100

V

_GS= 10V, I_D= 60A 

m

V

V_DS= V_GS, I_D= 50µA

I_DSS

Drain-to-Source Leakage Current

–––

µA V_DS= 40V, V_GS= 0V

µA _DS= 40V, V_GS= 0V, T_J= 125°C

V

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

nA V_GS= 20V

nA V_GS= -20V



––– -100

2.0 –––

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Q_g

Q_gs

Q_gd

Q_sync

Parameter

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Min. Typ. Max. Units

Conditions

_DS= 10V, I_D= 60A

I_D= 60A

198

–––

42

12

14

–––

63

–––

V

V_DS= 20V

_GS= 10V

S

V

28

t_d(on)

t_r

t_d(off)

t_f

C_iss

C_oss

C_rss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

–––

7.9

34

25

24

–––

V_DD= 20V

I_D= 30A

ns

R_G= 2.7

V

_GS= 10V 

V_GS= 0V

_DS= 25V

––– 2200 –––

V

–––

340

205

410

–––

ƒ = 1.0 MHz

V_GS= 0V, V_DS= 0V to 32V , See

Fig. 11 

C

_osseff. (ER) Effective Output Capacitance

pF

(Energy Related) 

C_osseff. (TR) Effective Output Capacitance

–––

495

–––

V_GS= 0V, V_DS= 0V to 32V 

(Time Related)

Notes:

 Calculated continuous current based on maximum allowable junction

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

temperature. Package limit current is 100A. Note that current

 Coss eff. (ER) is a fixed capacitance that gives the same

energy as Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to

application note #AN-994.

limitations arising from heating of the device leads may occur with

some lead mounting arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.037mH

R_G= 50, I_AS= 60A, V_GS=10V.

I_SD 60A, di/dt  918A/µs, V_DD V_(BR)DSS, T_J 175°C.

Pulse width  400µs; duty cycle  2%.

 R is measured at TJ approximately 90°C.

 This value determined from sample failure population,

starting T_J= 25°C, L=0.037mH, R_G= 25, I_AS= 60A, VGS =10V.

2

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May 06, 2013

AUIRFR_U8401

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

D

I_S

––– ––– 100

A

––– ––– 400

G

I_SM

S

V_SD

Diode Forward Voltage

––– –––

1.3

V

T_J= 25°C,I_S= 60A,V_GS= 0V 

dv/dt

Peak Diode Recovery dv/dt

–––

3.2

28

29

28

31

1.6

––– V/ns T_J= 175°C,I_S=60A,V_DS= 40V

–––

T_J= 25°C

V_DD= 34V

I_F= 60A,

t_rr

Reverse Recovery Time

ns

T_J= 125°C

T_J= 25°C di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

nC

A

T_J= 125°C

I_RRM

T_J= 25°C



3

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May 06, 2013

1000

100

10

1000

100

10

VGS

15V

10V

7.0V

6.0V

5.5V

5.3V

5.0V

4.8V

VGS

15V

10V

7.0V

6.0V

5.5V

5.3V

5.0V

4.8V

TOP

BOTTOM

4.8V

1

4.8V

 60µs PULSE WIDTH

Tj = 25°C

 60µs PULSE WIDTH

Tj = 175°C

0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

I

= 60A

D

V

= 10V

100

10

GS

T

= 175°C

J

1.5

1.0

0.5

T

= 25°C

J

1

0.1

0.01

V

= 10V

DS

 60µs PULSE WIDTH

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0 10.0

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

V

, Gate-to-Source Voltage (V)

GS

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

14

10000

1000

100

I = 60A

D

V

= 0V,

f = 1 MHZ

V

= 32V

= 20V

= 8.0V

GS

DS

C

= C + C , C SHORTED

12

10

8

iss

gs

= C

gd

ds

rss

oss

gd

= C + C

ds gd

Ciss

6

4

Coss

Crss

2

0

10

20

30

40

50

60

1

10

100

Q

Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

AUIRFR_U8401

1000

100

10

1000

100

10

T

= 175°C

J

100µsec

1msec

imited by

Package

L

T

= 25°C

J

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

10msec

1

Tc = 25°C

Tj = 175°C

Single Pulse

DC

10

V

= 0V

GS

1.6

0.1

0.0

0.4

0.8

1.2

2.0

0.1

1

V

, Source-to-Drain Voltage (V)

SD

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

100

49

Id = 1.0mA

48

80

60

40

20

0

47

46

45

44

43

42

41

40

25

50

75

100

125

150

175

39

-60 -40 -20 0 20 40 60 80 100120140160180

T

, Case Temperature (°C)

C

T

, Temperature ( °C )

J

Fig 10. Drain-to-Source Breakdown Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

0.3

240

I

D

TOP

8.5A

20A

200

160

120

80

BOTTOM 60A

0.2

0.1

0.0

40

0

10

20

30

40

25

50

75

100

125

150

175

V

Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

DS,

J

Fig 12. Maximum Avalanche Energy vs. Drain Current

Fig 11. Typical COSS Stored Energy

5

May 06, 2013

AUIRFR_U8401

10

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

Notes:

1. Duty Factor D = t1/t2

( THERMAL RESPONSE )

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

1

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and

Tstart = 150°C.

0.1

0.01

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

70

60

50

40

30

20

10

0

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

TOP

BOTTOM 1.0% Duty Cycle

= 60A

Single Pulse

I

D

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 14, 15).

t

_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z_thJC(D,t_av)= Transient thermal resistance, see Figures 14)

25

50

75

100

125

150

175

P_{D (ave)}= 1/2 ( 1.3·BV·Iav) = T/Z_thJC

Iav = 2T/[1.3·BV·Zth]

Starting T , Junction Temperature (°C)

J

E_{AS (AR)}= P_{D (ave)·}t_av

Fig 15. Maximum Avalanche Energy vs. Temperature

6

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May 06, 2013

AUIRFR_U8401

4.5

4.0

3.5

3.0

2.5

2.0

1.5

16

12

8

I

= 60A

D

I

= 50µA

= 250µA

= 1.0mA

= 1.0A

D

T

= 125°C

J

4

= 25°C

16

J

0

4

8

12

20

-75 -50 -25

0

25 50 75 100 125 150 175

, Temperature ( °C )

V

, Gate-to-Source Voltage (V)

GS

T

J

Fig 17. Threshold Voltage vs. Temperature

Fig 16. Typical On-Resistance vs. Gate Voltage

8

I

= 60A

F

I

= 40A

F

V

= 34V

R

V

= 34V

R

T = 25°C

J

T = 125°C

J

6

4

2

0

T = 25°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

di /dt (A/µs)

F

Fig. 19 - Typical Recovery Current vs. di^f/dt

Fig. 18 - Typical Recovery Current vs. di^f/dt

100

80

60

40

20

0

I

= 60A

I

= 40A

F

V

= 34V

V

= 34V

R

80

60

40

20

0

T = 25°C

J

T = 125°C

J

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/µs)

F

Fig. 21 - Typical Stored Charge vs. di^f/dt

May 06, 2013

Fig. 20 - Typical Stored Charge vs. di^f/dt

7

AUIRFR_U8401

10.0

8.0

6.0

4.0

2.0

V

= 6.0V

= 10V

GS

0

20

40

60

80

100

120

I

, Drain Current (A)

D

Fig 22. Typical On-Resistance vs. Drain Current

8

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May 06, 2013

AUIRFR_U8401

Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

V

(BR)DSS

t

p

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

I

0.01



t

p

AS

Fig 24a. Unclamped Inductive Test Circuit

Fig 24b. Unclamped Inductive Waveforms

Fig 25a. Switching Time Test Circuit

Fig 25b. Switching Time Waveforms

Id

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 26b. Gate Charge Waveform

Fig 26a. Gate Charge Test Circuit

9

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May 06, 2013

D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

Part Number

AUFR8401

Date Code

YWWA

IR Logo

Y= Year

WW= Work Week

A= Automotive, LeadFree

XX



XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

AUIRFR_U8401

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

Part Number

AUFU8401

Date Code

YWWA

IR Logo

Y= Year

WW= Work Week

XX



XX

A= Automotive, LeadFree

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

11

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May 06, 2013

AUIRFR_U8401

D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

12

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May 06, 2013

AUIRFR_U8401

Qualification Information^†

Automotive

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by

extension of the higher Automotive level.

3L-D-PAK

I-PAK

MSL1

Moisture Sensitivity Level

N/A

Machine Model

Class M2 (+/- 200)^††

AEC-Q101-002

Class H1C (+/- 2000)^††

AEC-Q101-001

Class C5 (+/- 2000)^††

AEC-Q101-005

Yes

Human Body Model

ESD

Charged Device Model

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

13

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May 06, 2013

AUIRFR_U8401

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products

and services at any time and to discontinue any product or services without notice. Part numbers designated with the

“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance

and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time

of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with

IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to sup-

port this warranty. Except where mandated by government requirements, testing of all parameters of each product is

not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications, cus-

tomers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration

and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information

with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documenta-

tion. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product

or service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant

into the body, or in other applications intended to support or sustain life, or in any other application in which the failure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR

products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ex-

penses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associat-

ed with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or

manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are

designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applica-

tions. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications

requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance

with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the des-

ignation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applica-

tions, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

14

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May 06, 2013


型号：	AUIRFU8401
厂家：	Infineon
描述：	Advanced Process Technology New Ultra Low On-Resistance 先进的工艺技术新的超低导通电阻
文件：	总14页 (文件大小：458K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFU8401 [INFINEON]

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