AUIRF8739L2_技术文档

AUIRF8739L2TR

AUTOMOTIVE GRADE

Automotive DirectFET^®Power MOSFET 



Advanced Process Technology

V_(BR)DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

Q_g

40V

Optimized for Automotive Motor Drive, DC-DC and

other Heavy Load Applications

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Lead Free, RoHS Compliant and Halogen Free

Automotive Qualified *

0.35m

0.6m

545A



375nC

S

D

G

S

DirectFET2 L-can

Applicable DirectFET^®Outline and Substrate Outline 

L8

SB

SC

M2

M4

L4

L6

L8

Description

The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The

DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement

specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current

automotive applications.

Base Part Number

Package Type

Standard Pack

Form

Tape and Reel

Orderable Part Number

Quantity

AUIRF8739L2

DirectFET®

AUIRF8739L2TR

4000

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

40

V

I_D@ T_C= 25°C

I_D@ T_C= 100°C

545

385

Continuous Drain Current, V_GS@ 10V 

Continuous Drain Current, V_GS@ 10V 

Continuous Drain Current, V_GS@ 10V (Package limit)

Pulsed Drain Current 

I_D@ T_A= 25°C

I_D@ T_C= 25°C

57

375

A

I_DM

1150

P_D@T_C= 25°C

340

Power Dissipation 

W

P_D@T_A= 25°C

3.8

Power Dissipation 

mJ

E_AS

312

1500**

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy

Avalanche Current 

E_AS(Tested)

I_AR

A

See Fig. 14, 15, 22a, 22b

E_AR

T_P

Repetitive Avalanche Energy 

Peak Soldering Temperature

mJ

°C

270

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

*Qualification standards can be found at http://www.irf.com/

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Thermal Resistance

Symbol

R_JA

Parameter

Typ.

Max.

40

Units

–––

12.5

20

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Can 

–––

0.44

0.5

R_JA

°C/W

W/°C

R_JA

–––

R_J-Can

Junction-to-PCB Mounted

Linear Derating Factor 

R_J-PCB

2.3

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

40 ––– –––

––– 0.03 ––– V/°C Reference to 25°C, I_D= 5.0mA

Conditions

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

V

V_GS= 0V, I_D= 250µA

V_(BR)DSS/T_J

R_DS(on)

V_GS(th)

––– 0.35 0.60

V_GS= 10V, I_D= 195A 

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

m

V

2.2

–––

250

–––

-12

–––

3.9

V_DS= V_GS, I_D= 250µA

Gate Threshold Voltage Coefficient

Forward Transconductance

Internal Gate Resistance

––– mV/°C

V_GS(th)/T_J

gfs

–––

S

V_DS= 10V, I_D= 195A

R_G

––– 0.81 –––



–––

1.0

150

100

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

nA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– -100

V_GS= -20V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

Conditions

V_DS= 20V

Q_g

Q_gs1

Total Gate Charge

–––

375

60

562

–––

V_GS= 10V

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

I_D= 195A

Q_gs2

Q_gd

40

nC

120

155

160

151

34

Q_godr

Q_sw

Q_oss

t_d(on)

t_r

V_DS= 32V, V_GS= 0V

V_DD= 20V, V_GS= 10V 

I_D= 195A

nC

ns

Turn-On Delay Time

Rise Time

117

120

95

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 1.8

C_iss

C_oss

C_rss

C_osseff.

Input Capacitance

––– 17890 –––

––– 2640 –––

––– 1830 –––

––– 3785 –––

V_GS= 0V

V_DS= 25V

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance

pF

ƒ = 500 kHz

V_GS= 0V, V_DS= 0V to 32V

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Diode Characteristics

Symbol Parameter

Min.

Typ.

Max. Units

Conditions

MOSFET symbol

Continuous Source Current

(Body Diode)

–––

545

A

I_S

showing the

integral reverse

Pulsed Source Current

(Body Diode) 

–––

1150

A

I_SM

p-n junction diode.

T_J= 25°C, I_S= 195A, V_GS= 0V 

I_F= 195A, V_DD= 20V

dv/dt = 100A/µs 

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

47

1.2

–––

V

ns

nC

66

Q_rr

 Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air).

 Mounted to a PCB with

small clip heatsink (still air)

 Surface mounted on 1 in.

square Cu board (still air).

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Fig. 1 Typical Output Characteristics

Fig. 2 Typical Output Characteristics

Fig. 4 Typical On-Resistance vs. Drain Current

Fig. 3 Typical On-Resistance vs. Gate Volt-

Fig 6. Normalized On-Resistance vs. Temperature

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Fig 5. Transfer Characteristics

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AUIRF8739L2TR

Fig. 7 Typical Threshold Voltage vs.

Fig 8. Typical Source-Drain Diode Forward Voltage

Junction Temperature

Fig 10. Typical Capacitance vs. Drain-to-Source Volt-

Fig 9. Typical Forward Transconductance vs. Drain Cur-

Fig 11. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 12. Maximum Drain Current vs. Case Temperature

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Fig 14. Maximum Avalanche Energy vs. Temperature

Fig 13. Maximum Safe Operating Area

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 16. Typical Avalanche Current vs. Pulse Width

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AUIRF8739L2TR

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 16, 17).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 15)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 17.

Fig

Fig 18a. Unclamped Inductive Test Circuit

VDD

Fig 19a. Gate Charge Test Circuit

Fig 19b. Gate Charge Waveform

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

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AUIRF8739L2TR

DirectFET^®Board Footprint, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

S

G

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF8739L2TR

DirectFET^®Outline Dimension, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all

recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.360

0.280

0.236

0.026

0.024

0.048

0.040

0.030

0.017

0.057

0.104

0.215

0.029

0.007

0.003

A

B

C

D

E

F

9.05

6.85

5.90

0.55

0.58

1.18

0.98

0.73

0.38

1.35

2.55

5.35

0.68

0.09

0.02

9.15

7.10

6.00

0.65

0.62

1.22

1.02

0.77

0.42

1.45

2.65

5.45

0.74

0.17

0.08

0.356

0.270

0.232

0.022

0.023

0.046

0.039

0.029

0.015

0.053

0.100

0.211

0.027

0.003

0.001

G

H

J

K

L

L1

M

P

R

Dimensions are shown in

millimeters (inches)

DirectFET^®Part Marking

"AU" = GATE AND

AUTOMOTIVE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF8739L2TR

DirectFET^®Tape & Reel Dimension (Showing component orientation)

NOTE: Controlling dimensions in mm

Std reel quantity is 4000 parts, ordered as AUIRF8739L2TR.

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

METRIC

IMPERIAL

CODE

MIN

12.992

0.795

0.504

0.059

3.900

N.C

MAX

N.C

MIN

MAX

N.C

A

B

C

D

E

F

330.00

20.20

12.80

1.50

N.C

0.520

N.C

13.20

N.C

99.00

N.C

3.940

0.880

0.720

0.760

100.00

22.40

18.40

19.40

G

H

0.650

0.630

16.40

15.90

LOADED TAPE FEED DIRECTION

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

11.90

3.90

15.90

7.40

7.20

9.90

1.50

MAX

12.10

4.10

MAX

0.476

0.161

0.642

0.299

0.291

0.398

N.C

A

B

C

D

E

F

4.69

0.154

0.623

0.291

0.283

0.390

0.059

16.30

7.60

7.40

10.10

N.C

G

H

0.063

1.60

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF8739L2TR

Qualification Information^†

Automotive

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

Moisture Sensitivity Level

Machine Model

DirectFET2 L-CAN

MSL1

Class M4 (+/- 800V)^††

AEC-Q101-002

Class H2 (+/- 4000V)^††

AEC-Q101-001

Yes

ESD

Human Body Model

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

Revision History

Date

Rev.

Comments



Final data sheet

Update Fig.13_SOA curve

Corrected typo on Absolute Maximum Ratings Table from ”VGS” to “VDS” on page 1

02/17/2015

2.0

06/15/2022

2.1

 Starting T_J= 25°C, L = 0.016mH, R_G= 50, I_AS= 195A,

Vgs = 20V.

 Pulse width  400µs; duty cycle  2%.

 Used double sided cooling, mounting pad with large

heatsink.

 Mounted on minimum footprint full size board with

metalized back and with small clip heatsink.

 Click on this section to link to the appropriate technical

paper.

 Click on this section to link to the DirectFET^®Website.

 Surface mounted on 1 in. square Cu board, steady state.

 T_Cmeasured with thermocouple mounted to top (Drain)

of part.

 Repetitive rating; pulse width limited by max. junction

temperature.

 R_is measured at T_Jof approximately 90°C.

** Starting T_J= 25°C, L = 0.1mH, R_G= 50, I_AS= 288A,

Vgs = 20V

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) re-

serve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and

services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” pre-

fix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process

change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowl-

edgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s

standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this

warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily

performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their prod-

ucts and applications using IR components. To minimize the risks with customer products and applications, customers

should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with altera-

tions is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Infor-

mation of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or

service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive

business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into

the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR

product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for

any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and rea-

sonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin-

tended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the

product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are de-

signed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.

Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring

military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal

and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the desig-

nation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR

will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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型号：	AUIRF8739L2
厂家：	Infineon
描述：	40V 汽车单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET L8 封装
文件：	总12页 (文件大小：1353K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRF8739L2 [INFINEON]

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