AUIRFL014N_技术文档

AUTOMOTIVE GRADE

AUIRFL014N

HEXFET^®Power MOSFET

Features

Advanced Planar Technology

Low On-Resistance

D

S

V_(BR)DSS

55V

0.16

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)max.

I_D

Ω

G

1.9A

Lead-Free, RoHS Compliant

Automotive Qualified *

D

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety

of other applications.

S

D

G

SOT-223

AUIRFL014N

G

D

S

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

Tube

Tape and Reel

95

2500

AUIRFL014N

AUIRFL014NTR

AUIRFL014N

SOT-223

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is

not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is

25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

2.7

Units

I

@ T = 25°C

A

D

1.9

@ T = 25°C

A

1.5

@ T = 70°C

A

15

DM

2.1

Power Dissipation (PCB Mount)

Linear Derating Factor (PCB Mount)

Gate-to-Source Voltage

W

P

@T = 25°C

A

D

1.0

@T = 25°C

A

8.3

W/°C

V

±20

V

GS

E_AS

I_AR

48

1.7

Single Pulse Avalanche Energy

Avalanche Current

mJ

A

E_AR

dv/dt

0.1

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

mJ

5.0

V/ns

°C

-55 to + 150

T

Operating Junction and

J

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

90

Max.

120

60

Units

R_θJA

Junction-to-Ambient (PCB mount, steady state)

°C/W

Junction-to-Ambient (PCB mount, steady state)

50

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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AUIRFL014N

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

55

–––

0.054

–––

0.16

4.0

V

V_GS= 0V, I_D= 250μA

ΔV_(BR)DSS/ΔT_J

Breakdown Voltage Temp. Coefficient

–––

2.0

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D=1.9A

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Ω

V

V_DS= V_GS, I_D= 250μA

gfs

Forward Transconductance

1.6

–––

1.0

S

V

_DS= 25V, I_D= 0.85A

_DS= 44V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

–––

μA

25

V_DS= 44V, V_GS= 0V, T_J= 150°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

100

-100

nA

V

_GS= -20V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Q_g

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

7.0

1.2

3.3

6.6

7.1

12

11

I_D= 1.7A

Q_gs

Q_gd

t_d(on)

t_r

1.8

V

_DS= 44V

nC

ns

pF

5.0

_GS= 10V, See Fig 6 and 9

–––

V_DD= 28V

I_D= 1.7A

t_d(off)

t_f

Ω

Turn-Off Delay Time

Fall Time

R

_G= 6.0

Ω,

See Fig.10

3.3

190

72

R_D=16

V_GS= 0V

_DS= 25V

ƒ = 1.0MHz, See Fig.5

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V

33

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I

Continuous Source Current

MOSFET symbol

S

–––

1.3

(Body Diode)

Pulsed Source Current

showing the

integral reverse

A

SM

–––

15

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

41

1.0

61

95

V

T = 25°C, I = 1.7A, V = 0V

SD

J

S

GS

Reverse Recovery Time

Reverse Recovery Charge

ns

nC

T = 25°C, I = 1.7A

J F

rr

di/dt = 100A/μs

Q

64

rr

Notes:

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L = 8.2mH, R_G= 25Ω, I_AS= 3.4A. (See Figure 12)

I_SD≤ 1.7A, di/dt ≤ 250A/μs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Pulse width ≤ 300μs; duty cycle ≤ 2%.

ꢀ When mounted on FR-4 board using minimum recommended footprint.

When mounted on 1 inch square copper board, for comparison with other SMD devices.

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100

10

1

100

10

1

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20μs PULSE WIDTH

T

= 150°C

T

= 25°C

C

J

A

0.1

A

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

1.5

1.0

0.5

0.0

I

= 1.7A

D

10

T_J= 150°C

T_J= 25°C

1

V_DS= 25V

20μs PULSE WIDTH

V

= 10V

GS

0.1

A

₉A

4

5

6

7

8

-60 -40 -20

0

20 40 60 80 100 120 140 160

V_GS, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

J

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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AUIRFL014N

20

16

12

8

350

300

250

200

150

100

50

I

= 1.7A

V

C

= 0V,

f = 1MHz

D

GS

iss

rss

oss

= C + C

,

C

SHORTED

V

= 44V

= 28V

= 11V

gs

gd

ds

DS

= C

gd

= C + C

ds

gd

C

iss

oss

C

rss

4

FOR TEST CIRCUIT

SEE FIGURE 9

0

A

0

2

4

6

8

10

1

10

100

Q

, Total Gate Charge (nC)

V

, Drain-to-Source Voltage (V)

G

DS

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

10

1

100

10

1

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150°C

J

100μs

T = 25°C

J

1ms

10ms

T

= 25°C

= 150°C

A

J

V

= 0V

GS

Single Pulse

A

0.1

A

0.4

0.6

0.8

1.0

1.2

1.4

1

10

100

V

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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AUIRFL014N

R_D

Q

G

V_DS

10V

V_GS

Q

GD

GS

D.U.T.

R_G

⁺V_DD

-

V

G

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Charge

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

V

DS

50KΩ

90%

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

10%

V

GS

V

GS

t

r

t

f

3mA

d(on)

d(off)

I

D

G

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

1000

100

D = 0.50

0.20

0.10

10

0.05

P

DM

0.02

t

0.01

1

t

2

Notes:

1. Duty factor D = t / t

SINGLE PULSE

(THERMAL RESPONSE)

1

2

2. Peak T = P

DM

x Z

+ T

thJA A

J

A

0.1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t₁, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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AUIRFL014N

120

100

80

60

40

20

0

I

D

TOP

1.5A

2.7A

BOTTOM 3.4A

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

0.01

Ω

t

p

V

= 25V

50

DD

Fig 12a. Unclamped Inductive Test Circuit

A

150

25

75

100

125

Starting T , Junction Temperature (°C)

J

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

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SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

FL014N

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFL014N

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)

3.90 (.154)

0.35 (.013)

0.25 (.010)

1.85 (.072)

1.65 (.065)

2.05 (.080)

1.95 (.077)

TR

7.55 (.297)

7.45 (.294)

16.30 (.641)

15.70 (.619)

7.60 (.299)

7.40 (.292)

1.60 (.062)

1.50 (.059)

TYP.

FEED DIRECTION

2.30 (.090)

2.10 (.083)

7.10 (.279)

6.90 (.272)

12.10 (.475)

11.90 (.469)

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519)

12.80 (.504)

15.40 (.607)

11.90 (.469)

4

330.00

(13.000)

MAX.

50.00 (1.969)

MIN.

18.40 (.724)

MAX.

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

4

3

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFL014N

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive level.

Moisture Sensitivity Level

SOT-223

MSL1

Class M1A(+/- 50V )^†††

Machine Model

(per AEC-Q101-002)

Class H1A(+/- 350V )^†††

(per AEC-Q101-001)

Human Body Model

ESD

Class C5(+/- 2000V )^†††

(per AEC-Q101-005)

Charged Device

Model

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.

††

††† Highest passing voltage

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AUIRFL014N

IMPORTANTNOTICE

Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)

reservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproducts

andservicesatanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignatedwiththe

“AU”prefixfollowautomotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuance

andprocesschangenotification. AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetime

oforderacknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance

withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary

to support this warranty. Except where mandated by government requirements, testing of all parameters of each

product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalteration

andisaccompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformation

with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered

documentation. Information of third parties may be subject to additional restrictions.

ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproduct

or service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplant

intothebody, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use

IRproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifier

anditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the

design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,

are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other

applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in

applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible

for compliance with all legal and regulatory requirements in connection with such use.

IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecific

IRproductsaredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthe

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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AUIRFL014N

Revision History

Date

Comments

•

Updated part marking on page 7

Updated data sheet with new IR corporate template

3/26/2014

11

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型号：	AUIRFL014N
厂家：	Infineon
描述：	Power Field-Effect Transistor, 1.9A I(D), 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 局域网开关脉冲光电二极管晶体管
文件：	总11页 (文件大小：224K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFL014N [INFINEON]

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