AUIRFL024N_技术文档

AUTOMOTIVE GRADE

AUIRFL024N

HEXFET^®Power MOSFET

Features

D

S

V_(BR)DSS

R_DS(on)max.

I_D

55V

75m

• Advanced Planar Technology

• Low On-Resistance

• Dynamic dV/dT Rating

• 150°C Operating Temperature

• Fast Switching

Ω

G

2.8A

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified*

D

S

D

G

Description

Specifically designed for Automotive applications, this

cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined

with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient

and reliable device for use in Automotive and a wide

variety of other applications.

SOT-223

AUIRFL024N

G

D

S

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

Tube

95

AUIRFL024N

SOT-223

Tape and Reel

2500

AUIRFL024NTR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

4.0

Units

I

@ T_A= 25°C

@ T_A= 70°C

D

2.8

2.3

A

11.2

2.1

DM

P

@T_A= 25°C Power Dissipation (PCB Mount)

D

W

1.0

8.3

Power Dissipation (PCB Mount)

Linear Derating Factor (PCB Mount)

Gate-to-Source Voltage

@T_A= 25°C

mW/°C

V

± 20

V

GS

E_AS

I_AR

214

2.8

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

mJ

A

E_AR

dv/dt

0.1

5.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

mJ

V/ns

-55 to + 150

T

J

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

90

Max.

120

60

Units

R_θJA

Junction-to-Ambient (PCB mount, steady state)

°C/W

50

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

1

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

55 ––– –––

––– 0.056 –––

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1mA

V_(BR)DSS

ΔV_(BR)DSS/ΔT_J

R_DS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V

–––

2.0

–––

75

4.0

–––

25

V_GS= 10V, I_D= 2.8A

Ω

V

m

V_GS(th)

V_DS= V_GS, I_D= 250μA

gfs

I_DSS

Forward Transconductance

3.0

S

V_DS= 25V, I_D= 1.6A

Drain-to-Source Leakage Current

–––

μA V_DS= 55V, V_GS= 0V

250

100

V_DS= 44V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA

V

_GS= 20V

_GS= -20V

––– -100

V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

–––

8.1

18.3

I_D= 1.68A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

3.0

nC V_DS= 28V

7.7

V_GS= 10V, See Fig. 6 and 9

V_DD= 28V

–––

13.4

22.2

17.7

400

145

60

ns

I_D= 1.68A

t_d(off)

t_f

Ω

R_G= 24

Turn-Off Delay Time

Fall Time

R_D= 17Ω, See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

pF

V_DS= 25V

ƒ = 1.0MHz, See Fig. 5

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I

Continuous Source Current

–––

2.8

MOSFET symbol

S

(Body Diode)

Pulsed Source Current

A

showing the

integral reverse

–––

11.2

SM

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

35

1.0

53

75

V

T = 25°C, I = 1.68A, V = 0V

SD

J

S

GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns

nC

T = 25°C, I = 1.68A

J F

di/dt = 100A/μs

rr

Q

t

50

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11)

V_DD= 25V, starting T_J= 25°C, L = 54.7mH

R_G= 25Ω, I_AS= 2.8A. (See Figure 12)

I_SD≤ 1.68A, di/dt ≤ 155A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C .

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ When mounted on FR-4 board using minimum recommended

footprint.

When mounted on 1 inch square copper board, for comparison

with other SMD devices.

,

2

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

100

10

1

100

10

1

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20μs PULSE WIDTH

°

T = 25 C

J

°

T = 150 C

J

0.1

1

10

100

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics,

Fig 2. Typical Output Characteristics,

2.0

100

2.8A

=

I

D

1.5

1.0

0.5

0.0

10

°

T = 150 C

J

°

T = 25 C

J

V

= 25V

DS

V

= 10V

20μs PULSE WIDTH

GS

1

4.5

5.0

5.5

6.0

6.5

-60 -40 -20

0

20 40 60 80 100 120 140 160

°

V

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

J

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

3

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

700

600

500

400

300

200

100

0

20

15

10

5

V

= 0V,

f = 1MHz

C SHORTED

ds

I

D

= 1.68 A

GS

C

= C + C

V

= 44V

= 27V

iss

gs

gd ,

DS

C

= C

rss

gd

C

= C + C

oss

ds

gd

C

iss

C

oss

C

rss

FOR TEST CIRCUIT

SEE FIGURE 13

0

5

10

15

20

1

10

100

Q , Total Gate Charge (nC)

V

, Drain-to-Source Voltage (V)

G

DS

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

10

1

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10

100us

1ms

1

10ms

°

T = 150 C

J

°

T = 25 C

J

°

T = 25 C

C

°

T = 150 C

Single Pulse

J

V

= 0 V

GS

1.0

0.1

0.2

0.1

0.4

0.6

0.8

1.2

0.1

1

10

100

1000

V

,Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

R_D

V_DS

Q

G

10V

V_GS

D.U.T.

Q

GD

GS

R_G

⁺V_DD

-

V

G

10V

Charge

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

V

DS

90%

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

10%

V

GS

V

GS

t

r

t

f

3mA

d(on)

d(off)

I

D

G

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

1000

100

10

1

D = 0.50

0.20

0.10

0.05

P

2

DM

0.02

0.01

t

1

t

2

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

1

2. Peak T =P

J

x Z

+ T

thJC C

DM

0.1

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

5

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

500

400

300

200

100

0

I

D

TOP

1.3A

2.2A

15V

BOTTOM 2.8A

DRIVER

+

L

V

DS

D.U.T

R

G

V

DD

-

I

A

AS

10V

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

25

50

75

100

125

150

°

Starting T , Junction Temperature ( C)

J

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

6

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

FL024N

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

7

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)

3.90 (.154)

0.35 (.013)

0.25 (.010)

1.85 (.072)

1.65 (.065)

2.05 (.080)

1.95 (.077)

TR

7.55 (.297)

7.45 (.294)

16.30 (.641)

15.70 (.619)

7.60 (.299)

7.40 (.292)

1.60 (.062)

1.50 (.059)

TYP.

FEED DIRECTION

2.30 (.090)

2.10 (.083)

7.10 (.279)

6.90 (.272)

12.10 (.475)

11.90 (.469)

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519)

12.80 (.504)

15.40 (.607)

11.90 (.469)

4

330.00

(13.000)

MAX.

50.00 (1.969)

MIN.

18.40 (.724)

MAX.

NOTES :

1. OUTLINE COMFORMS TO EIA-418-1.

2. CONTROLLING DIMENSION: MILLIMETER..

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566)

12.40 (.488)

4

3

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

Qualification Information^†

Automotive

††

(per AEC-Q101)

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive

level.

Qualification Level

Moisture Sensitivity Level

SOT-223

MSL1

Class M2 (+/- 150V)^†††

Machine Model

AEC-Q101-002

Class H1A (+/- 350V)^†††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 2000V)^†††

AEC-Q101-005

Charged Device Model

Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage.

9

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-

iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other

changes to its products and services at any time and to discontinue any product or services without notice.

Part numbers designated with the AU prefix follow automotive industry and / or customer specific

requirements with regards to product discontinuance and process change notification. All products are sold

subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in

accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent

IR deems necessary to support this warranty. Except where mandated by government requirements, testing

of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible

for their products and applications using IR components. To minimize the risks with customer products and

applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without

alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction

of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable

for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for

that product or service voids all express and any implied warranties for the associated IR product or service

and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical

implant into the body, or in other applications intended to support or sustain life, or in any other application

in which the failure of the IR product could create a situation where personal injury or death may occur. Should

Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify

and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even

if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of

Defense, are designed and manufactured to meet DLA military specifications required by certain military,

aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by

DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and

that they are solely responsible for compliance with all legal and regulatory requirements in connection with

such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the

specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part

number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

10

Submit Datasheet Feedback

March 26, 2014

AUIRFL024N

Revision History

Date

Comments

•

Updated part marking on page 7

Updated data sheet with new IR corporate template

3/26/2014

11

Submit Datasheet Feedback

March 26, 2014


型号：	AUIRFL024N
厂家：	Infineon
描述：	Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 局域网开关光电二极管晶体管
文件：	总11页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFL024N [INFINEON]

相关型号：

AUIRFL024NTR

AUIRFN7107

AUIRFN7107TR

AUIRFN8401

AUIRFN8401TR

AUIRFN8403TR

AUIRFN8405

AUIRFN8405TR

AUIRFN8458

AUIRFN8458TR

AUIRFN8459

AUIRFN8459TR