AUIRFB3207 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | AUIRFB3207 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96322
AUTOMOTIVE GRADE
AUIRFB3207
HEXFET® Power MOSFET
Features
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
S
75V
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
3.6m
4.5m
170A
Ω
Ω
G
75A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
S
D
G
TO-220AB
AUIRFB3207
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
170
120
A
75
720
PD @TC = 25°C
W
300
Maximum Power Dissipation
2.0
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
± 20
910
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
mJ
A
Avalanche Current
See Fig. 14, 15, 16a, 16b,
EAR
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
5.8
dV/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
RθJC
Junction-to-Case
RθCS
RθJA
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/21/10
AUIRFB3207
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.069 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
V
–––
2.0
3.6
4.5
4.0
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 75A
f = 1MHz, open drain
mΩ
V
–––
Forward Transconductance
150 ––– –––
S
RG
Gate Input Resistance
–––
1.2
–––
20
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
V
µA
nA
––– ––– 250
––– ––– 200
––– ––– -200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
––– 180 260
Conditions
Qg
Total Gate Charge
ID = 75A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
48
68
29
–––
–––
–––
VDS = 60V
nC
ns
Qgd
VGS = 10V
td(on)
VDD = 48V
ID = 75A
tr
Rise Time
––– 120 –––
td(off)
Turn-Off Delay Time
–––
–––
68
74
–––
–––
RG = 2.6Ω
VGS = 10V
VGS = 0V
tf
Fall Time
Ciss
Input Capacitance
––– 7600 –––
––– 710 –––
––– 390 –––
––– 920 –––
––– 1010 –––
Coss
Output Capacitance
VDS = 50V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz
pF
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 60V , See Fig.11
GS = 0V, VDS = 0V to 60V , See Fig. 5
V
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 170
A
(Body Diode)
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 720
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
63
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
–––
–––
–––
–––
–––
42
49
65
92
2.6
ns
IF = 75A
di/dt = 100A/µs
74
Qrr
Reverse Recovery Charge
98
nC
A
140
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Coss eff. (TR) is a fixed capacitance that gives the same charging time
Calculated continuous current based on maximum allowable junction
as Coss while VDS is rising from 0 to 80% VDSS
.
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax, starting TJ = 25°C, L = 0.33mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
Rθ is measured at TJ approximately 90°C.
ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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AUIRFB3207
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
3L-TO-220
N/A
Machine Model
Class M4(425V)
(per AEC-Q101-002)
Class H2(4000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRFB3207
1000
TOP
1000
100
10
VGS
15V
VGS
15V
TOP
10V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
BOTTOM
10
4.5V
4.5V
1
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000.0
100.0
10.0
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
V
= 50V
DS
≤ 60µs PULSE WIDTH
1.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12000
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I = 75A
D
V
= 60V
= C + C , C SHORTED
DS
iss
gs
gd ds
VDS= 38V
C
= C
rss
gd
16
12
8
C
= C + C
ds
oss
gd
Ciss
4
Coss
Crss
0
0
40
80
120 160 200 240 280
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFB3207
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
, Source-to-Drain Voltage (V)
0.1
0.1
1
10
100
1000
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
90
200
150
100
50
Limited By Package
80
70
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
J
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
4000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
TOP
12A
16A
75A
3000
2000
1000
0
BOTTOM
25
50
75
100
125
150
175
20
30
V
40
50
60
70
80
Starting T , Junction Temperature (°C)
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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5
AUIRFB3207
1
D = 0.50
0.1
0.01
0.20
0.10
R1
R1
R2
R2
0.05
Ri (°C/W) τi (sec)
0.2151 0.001175
τ
J τJ
τ
0.02
0.01
τ
Cτ
1τ1
Ci= τi/Ri
τ
2τ2
0.2350 0.017994
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1000
800
600
400
200
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting T , Junction Temperature (°C)
J
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFB3207
16
14
12
10
8
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
I
= 30A
6
F
V
= 64V
R
4
T
T
= 125°C
= 25°C
J
J
2
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
100 200 300 400 500 600 700 800 900 1000
T
di / dt - (A / µs)
f
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
16
14
12
10
8
400
300
200
I
= 45A
= 64V
I
= 30A
= 64V
6
4
2
F
F
100
0
V
T
V
T
R
R
= 125°C
= 25°C
= 125°C
= 25°C
J
J
T
T
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
400
300
200
100
0
I
= 45A
= 64V
F
V
T
R
= 125°C
= 25°C
J
T
J
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRFB3207
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRFB3207
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB3207
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFB3207
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFB3207
TO-220
Tube
50
AUIRFB3207
10
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AUIRFB3207
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating
safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by
all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
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and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or
liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
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that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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11
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