AUIRF9952QTR [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRF9952QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总13页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97647
AUTOMOTIVE GRADE AUIRF9952Q
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l LowOn-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°COperatingTemperature
l Fast Switching
l Full Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
N-CHANNEL MOSFET
N-CH P-CH
1
2
3
4
8
S1
D1
D1
7
G1
V(BR)DSS
RDS(on) max.
ID
30V
0.10
-30V
0.25
6
5
S2
D2
D2
Ω
Ω
G2
P-CHANNEL MOSFET
3.5A -2.3A
Top View
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF9952Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
N-Channel
P-Channel
-2.3
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
@ TA = 70°C
3.5
2.8
16
D
D
A
-1.8
-10
DM
2.0
Power Dissipation
P
D
P
D
@TA = 25°C
@TA = 70°C
W
1.3
Power Dissipation
0.016
± 20
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
V
GS
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
44
57
mJ
A
2.0
-1.3
EAR
dv/dt
0.25
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-5.0
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient (PCB Mount, steady state)
62.5
°C/W
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
04/25/11
AUIRF9952Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
VGS = 0V, ID =-250μA
30
––– –––
––– –––
V
N-Ch
P-Ch
N-Ch
P-Ch
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.015 –––
––– 0.08 0.10
––– 0.12 0.15
––– 0.165 0.250
––– 0.290 0.400
Reference to 25°C, ID = -1mA
V
V
V
GS = 10V, ID = 2.2A
GS = 4.5V, ID = 1.0A
GS = -10V, ID = -1.0A
N-Ch
P-Ch
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS = -4.5V, ID = -0.5A
1.0
–––
3.0
V
S
V
V
DS = VGS, ID = 250μA
DS = VGS, ID = -250μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VGS(th)
gfs
Gate Threshold Voltage
-1.0 ––– -3.0
–––
–––
12
–––
–––
2.0
VDS = 15V, ID = 3.5A
Forward Transconductance
2.4
V
V
V
V
V
DS = -15V, ID = -2.3A
––– –––
DS = 24V, VGS = 0V
––– ––– -2.0
––– –––
––– –––
DS = -24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
DS = -24V, VGS = 0V, TJ = 125°C
μA
IDSS
Drain-to-Source Leakage Current
25
-25
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-P ––– ––– -100
N-P ––– ––– 100
VGS = 20V
nA
V
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Conditions
N-Ch –––
–––
6.9
6.1
14
12
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
Qg
Total Gate Charge
P-Ch
nC
N-Ch –––
P-Ch –––
1.0
1.7
1.8
2.0
3.4
3.5
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
P-Channel
ID =-2.3A, VDS =-10V, VGS =-10V
–––
N-Ch
N-Ch –––
P-Ch –––
1.1
6.2
9.7
8.8
2.2
12
19
18
N-Channel
VDD= 10V, ID = 1.0A RG = 6.0Ω
RD = 10Ω
–––
–––
N-Ch
P-Ch
ns
N-Ch –––
N-Ch –––
14
13
20
3.0
28
26
40
P-Channel
VDD=-10V, ID =-1.0A RG = 6.0Ω
RD = 10Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
P-Ch
N-Ch
6.0
P-Ch –––
6.9
14
N-Ch ––– 190 –––
––– 190 –––
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
P-Ch
pF
N-Ch ––– 120 –––
P-Ch ––– 110 –––
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
–––
61
–––
N-Ch
P-Ch –––
54
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch ––– –––
1.7
Continuous Source Current
(Body Diode)
IS
P-Ch ––– ––– -1.3
A
N-Ch ––– –––
P-Ch ––– –––
16
16
Pulsed Source Current
(Body Diode)
ISM
––– 0.82 1.2
––– -0.82 -1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V
TJ = 25°C, IS = -1.25A, VGS = 0V
N-Ch
P-Ch
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
N-Ch –––
–––
N-Ch –––
–––
27
27
53
54
ns N-Channel
TJ = 25°C,IF =1.25A, di/dt = 100A/μs
nC P-Channel
TJ = 25°C,IF =-1.25A, di/dt = 100A/μs
P-Ch
28
31
57
62
Qrr
Reverse Recovery Charge
Forward Turn-On Time
P-Ch
ton
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A.
max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
(See Figure 12)
,
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
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2
AUIRF9952Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class Q1(N) = M1A (+/- 50V)††† , Q2(P) = M1A (+/- 50V)†††
Machine Model
AEC-Q101-002
Class Q1(N) = H0 (+/- 150V)††† , Q2(P) = H0 (+/- 150V)†††
AEC-Q101-001
Human Body Model
ESD
Class Q1(N) = C4 (+/- 1000V)††† , Q2(P) = C4 (+/- 1000V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF9952Q
N-Channel
100
100
VGS
VGS
15V
10V
TOP
15V
TOP
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
10
3.0V
3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
1
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
TJ = 25°C
T = 150°C
J
10
TJ = 150°C
T = 25°C
J
VDS = 10V
20μs PULSE WIDTH
6.0A
V
= 0V
GS
A
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
3.0
3.5
4.0
4.5
5.0
5.5
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
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4
AUIRF9952Q
N-Channel
0.12
0.10
0.08
0.06
0.04
2.0
1.5
1.0
0.5
0.0
2.2A
=
I
D
V
= 4.5V
GS
V
= 10V
GS
V
=10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
2
4
6
8
10
12
T , Junction Temperature( C)
J
I , Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
100
0.16
0.14
0.12
0.10
0.08
I
D
TOP
0.89A
1.6A
BOTTOM 2.0A
80
60
40
20
0
I
= 3.5A
D
0.06
0.04
0.02
0.00
A
150
A
25
50
75
100
125
0
3
6
9
12
15
Starting T , Junction Temperature (°C)
J
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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5
AUIRF9952Q
N-Channel
350
20
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I
D
= 1.8A
= C + C
,
C
SHORTED
gs
gd
ds
V
= 10V
= C
gd
300
250
200
150
100
50
DS
= C + C
ds
gd
16
12
8
C
C
iss
oss
C
rss
4
0
A
0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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6
AUIRF9952Q
P-Channel
100
10
1
100
10
1
VGS
- 15V
VGS
- 15V
TOP
TOP
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T = 150°C
J
T
J
= 25°C
A
0.1
A
10
0.1
0.1
1
10
0.1
1
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
100
10
1
10
TJ = 25°C
TJ= 150°C
T = 150°C
J
T = 25°C
J
1
VDS = -10V
20μs PULSE WIDTH
V
= 0V
GS
0.1
A
0.1
8.0A
3.0
4.0
5.0
6.0
7.0
0.4
0.6
0.8
1.0
1.2
1.4
-VGS , Gate-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain
Diode
Forward Voltage
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7
AUIRF9952Q
P-Channel
2.5
2.0
1.5
1.0
0.5
0.0
2.0
-1.0A
=
I
D
1.5
1.0
0.5
0.0
V
= -4.5V
GS
V
GS
= -10V
V
=-10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0.0
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs. Temperature
0.80
150
I
D
TOP
-0.58A
-1.0A
120
90
60
30
0
BOTTOM -1.3A
0.60
0.40
0.20
0.00
I
= -2.3A
D
A
25
50
75
100
125
150
0
3
6
9
12
15
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Fig 19. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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8
AUIRF9952Q
P-Channel
400
300
200
100
0
20
V
C
C
C
= 0V,
f = 1MHz
I
D
= -2.3A
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
=-10V
DS
= C
= C + C
ds
gd
16
12
8
C
C
iss
oss
C
rss
4
0
A
0
2
4
6
8
10
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
G
DS
Fig 21. Typical Gate Charge Vs.
Fig 20. Typical Capacitance
Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
AUIRF9952Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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10
AUIRF9952Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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11
AUIRF9952Q
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF9952Q
SO-8
AUIRF9952Q
Tape and Reel
4000
AUIRF9952QTR
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12
AUIRF9952Q
IMPORTANTNOTICE
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reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
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and applications using IR components. To minimize the risks with customer products and applications, customers should
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orservicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptive
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designationAU. Buyersacknowledgeandagreethat,iftheyuseanynon-designatedproductsinautomotiveapplications,
IR will not be responsible for any failure to meet such requirements.
Fortechnicalsupport,pleasecontactIRsTechnicalAssistanceCenter
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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