AUIRF8736M2TR [INFINEON]
Automotive DirectFET® Power MOSFET;
| 型号： | AUIRF8736M2TR |
| 厂家： | 
Infineon |
| 描述： | Automotive DirectFET® Power MOSFET |
| 文件： | 总12页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRF8736M2TR
Automotive DirectFET® Power MOSFET
Advanced Process Technology
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
Optimized for Automotive Motor Drive, DC-DC and
1.3m
1.9m
137A
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
136nC
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
DirectFET® ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
M4
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
AUIRF8736M2
DirectFET2 M-CAN
AUIRF8736M2TR
Tape and Reel
4800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
40
±20
V
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
137
97
27
565
A
PD @TC = 25°C
PD @TA = 25°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
63
2.5
82
254
W
mJ
EAS (Tested)
A
IAR
See Fig. 14, 15, 22a, 22b
EAR
TP
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
mJ
°C
270
TJ
TSTG
-55 to + 175
Storage Temperature Range
*Qualification standards can be found at http://www.irf.com/
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AUIRF8736M2TR
Thermal Resistance
Symbol
RJA
Parameter
Typ.
Max.
60
Units
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
12.5
20
–––
–––
2.4
RJA
RJA
°C/W
W/°C
–––
1.0
RJ-Can
Junction-to-PCB Mounted
Linear Derating Factor
–––
RJ-PCB
0.42
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.03 ––– V/°C Reference to 25°C, ID = 1.0mA
Conditions
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
RDS(on)
VGS(th)
–––
2.2
1.3
1.9
3.9
V
GS = 10V, ID = 85A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
–––
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
––– -9.3
150 –––
––– 0.73 –––
––– mV/°C
VGS(th)/TJ
gfs
–––
S
VDS = 10V, ID = 85A
RG
–––
–––
–––
–––
–––
–––
–––
1.0
150
100
VDS = 40V, VGS = 0V
DS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
Conditions
Qg
Qgs1
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
136
28
10
45
53
55
41
36
119
82
83
204
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 20V
GS = 10V
ID = 85A
V
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Qgs2
Qgd
nC
Qgodr
Qsw
Qoss
td(on)
tr
VDS = 32V, VGS = 0V
VDD = 40V, VGS = 10V
ID = 85A
nC
ns
Turn-On Delay Time
Rise Time
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8
Ciss
Coss
Crss
Input Capacitance
––– 6867 –––
––– 1045 –––
VGS = 0V
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
pF
ƒ = 1.0 MHz
–––
682
–––
C
oss eff.
––– 1362 –––
VGS = 0V, VDS = 0V to 32V
2
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AUIRF8736M2TR
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
137
IS
A
A
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
565
ISM
p-n junction diode.
TJ = 25°C, IS = 85A, VGS = 0V
IF = 85A, VDD = 25V
dv/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
46
1.3
–––
–––
V
ns
nC
59
Qrr
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in.
square Cu board (still air).
3
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1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
1
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
5.0
2.0
1.8
1.6
1.4
1.2
1.0
I
= 85A
D
T
= 125°C
4.0
3.0
2.0
1.0
0.0
J
T
= 125°C
J
T
= 25°C
J
T
= 25°C
J
4
6
8
10 12 14 16 18 20
0
20
40
60
80
100 120 140
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig. 4 Typical On-Resistance vs. Drain Current
Fig. 3 Typical On-Resistance vs. Gate Voltage
1000
1.8
I
= 85A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
T
T
T
= -40°C
= 25°C
= 175°C
J
J
J
10
V
= 10V
DS
60µs PULSE WIDTH
1.0
3
4
5
6
7
8
-60 -40 -20
T
0
20 40 60 80 100120140160180
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6. Normalized On-Resistance vs. Temperature
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Fig 5. Transfer Characteristics
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AUIRF8736M2TR
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1000
100
10
T
= 175°C
J
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
T
= 25°C
J
1
V
GS
= 0V
1.2
0.1
-75 -50 -25
0
25 50 75 100 125 150 175
0.2
0.4
V
0.6
0.8
1.0
1.4
T
, Temperature ( °C )
, Source-to-Drain Voltage (V)
J
SD
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
100000
300
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
250
200
150
100
50
T = 25°C
ds
gd
J
10000
1000
100
C
iss
C
oss
C
rss
T = 175°C
J
V
= 10V
DS
20µs PULSE WIDTH
0
1
10
, Drain-to-Source Voltage (V)
100
0
20 40 60 80 100 120 140 160 180
V
DS
I
, Drain-to-Source Current (A)
D
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
140
14.0
I
= 85A
D
120
100
80
60
40
20
0
12.0
10.0
8.0
V
V
V
= 32V
= 20V
= 8.0V
DS
DS
DS
6.0
4.0
2.0
0.0
25
50
75
100
125
150
175
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
Q , Total Gate Charge (nC)
G
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
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400
300
200
100
0
10000
1000
100
10
I
D
OPERATION IN THIS AREA
LIMITED BY R (on)
TOP
12A
20A
BOTTOM 85A
DS
100µsec
1msec
10msec
1
DC
Tc = 25°C
0.1
Tj = 175°C
Single Pulse
0.01
25
50
75
100
125
150
175
0.1
1
10
100
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 16. Single Avalanche Event: Pulse Current vs. Pulse Width
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AUIRF8736M2TR
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 16, 17:
TOP
BOTTOM 1.0% Duty Cycle
= 85A
Single Pulse
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
J
Fig 17. Maximum Avalanche Energy vs. Temperature
E
AS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
VDD
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
7
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AUIRF8736M2TR
DirectFET® Board Footprint, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
G
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF8736M2TR
DirectFET® Outline Dimension, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.024
0.032
0.032
0.032
0.017
0.047
0.094
0.142
0.029
0.007
0.003
A
B
C
D
E
F
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.78 0.82
0.78 0.82
0.78 0.82
0.38 0.42
1.10 1.20
2.30 2.40
3.50 3.60
0.68 0.74
0.09 0.17
0.02 0.08
0.246
0.189
0.152
0.014
0.023
0.031
0.031
0.031
0.015
0.043
0.090
0.138
0.027
0.003
0.001
G
H
J
K
L
L1
M
P
R
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF8736M2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
F
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF8736M2TR). For 1000 parts on 7"
reel, order AUIRF8736M2TR1
LOADED TAPE FEED DIRECTION
B
A
H
E
G
DIMENSIONS
METRIC
MIN
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
G
H
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF8736M2TR
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
Machine Model
Medium Can
MSL1
Class M4 (+/- 800V)††
AEC-Q101-002
Class H2 (+/- 4000V)††
AEC-Q101-001
Yes
ESD
Human Body Model
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
Starting TJ = 25°C, L = 0.023mH, RG = 50, IAS = 85A,
Vgs = 10V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heatsink.
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain)
of part.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
R is measured at TJ of approximately 90°C.
Repetitive rating; pulse width limited by max. junction
temperature.
11
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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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tions is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Infor-
mation of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
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signed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.
Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
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tion “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will
not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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