HAT1038R [HITACHI]
Silicon P Channel Power MOS FET High Speed Power Switching; 硅P沟道功率MOS FET高速电源开关
| 型号： | HAT1038R |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-663C (Z)
4th. Edition
February 1999
Features
•
•
•
•
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
SOP–8
5
6
7
8
4
3
2
1
6
5
7 8
D D
D D
4
G
2
G
1, 3
2, 4
Source
Gate
5, 6, 7, 8 Drain
S 3
1
S
MOS2
MOS1
HAT1038R/HAT1038RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
– 60
± 20
– 3.5
– 28
– 3.5
—
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VDSS
VGSS
ID
V
A
Note1
Drain peak current
Body-drain diode reverse drain current
ID(pulse)
IDR
A
A
Note4
Avalanche current
HAT1038R
IAP
—
A
HAT1038RJ
HAT1038R
HAT1038RJ
– 3.5
—
Note4
Avalanche energy
EAR
—
mJ
W
W
°C
°C
1.05
2
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Pch Note2
Pch Note3
Tch
3
150
Tstg
– 55 to + 150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
2
HAT1038R/HAT1038RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS – 60
ID = – 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 16 V, VDS = 0
VDS = – 60 V, VGS = 0
Gate to source breakdown voltage V(BR)GSS ± 20
—
—
V
Gate to source leak current
IGSS
—
—
—
—
—
– 1.2
—
—
3
—
± 10
– 1
µA
µA
Zero gate voltage
drain current
HAT1038R IDSS
HAT1038RJ IDSS
HAT1038R IDSS
HAT1038RJ IDSS
—
—
– 0.1 µA
Zero gate voltage
drain current
—
—
µA
µA
V
VDS = – 48 V, VGS = 0
Ta=125°C
—
–10
– 2.2
0.15
0.23
—
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
VDS = – 10 V, I D = – 1 mA
ID = – 2 A, VGS = – 10 VNote5
ID = – 2 A, VGS = – 4 VNote5
ID = – 2 A, VDS = – 10 VNote5
VDS = –10 V
0.12
0.16
4.5
600
290
75
Ω
Ω
Forward transfer admittance
Input capacitance
S
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1MHz
11
—
VGS = –10 V, ID = – 2 A
VDD – 30 V
Rise time
30
—
Turn-off delay time
td(off)
tf
100
55
—
Fall time
—
Body–drain diode forward voltage
VDF
– 0.98 – 1.28
70
IF = – 3. 5 A, VGS = 0Note5
Body–drain diode reverse
recovery time
trr
—
ns
IF = – 3. 5 A, VGS = 0
diF/ dt = 50A/µs
Note: 5. Pulse test
3
HAT1038R/HAT1038RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
10 µs
–100
–30
4.0
3.0
2.0
1.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
–10
–3
–1
–0.3
–0.1
Operation in
this area is
limited by R
DS(on)
–0.03
–0.01
Ta = 25 °C
1 shot pulse
0
50
100
150
200
–0.1 –0.3 –1
–3
–10 –30 –100
(V)
Drain to Source Voltage
V
DS
Ambient Temperature Ta (°C)
Note 6 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
–10 V
–10
–8
–6
–4
–2
–10
–8
–6
–4
–2
V
= 10 V
DS
Pulse Test
–5 V
–3.5 V
–4 V
Pulse Test
–3 V
25 °C
–25 °C
–4
Tc = 75 °C
V
= –2.5 V
–8
GS
0
–1
–2
–3
–5
(V)
0
–2
–4
–6
–10
Gate to Source Voltage
V
GS
Drain to Source Voltage
V
(V)
DS
4
HAT1038R/HAT1038RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
–0.5
–0.4
–0.3
–0.2
–0.1
Pulse Test
Pulse Test
0.5
0.2
V
GS
= –4 V
I
= –2 A
–1 A
D
0.1
–10 V
0.05
–0.5 A
0.02
0.01
0
–4
–8
–12
–16
–20
–0.1 –0.3
–1
–3
–10 –30 –100
(A)
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
20
10
5
0.5
Pulse Test
V
= 10 V
DS
Pulse Test
0.4
0.3
0.2
0.1
Ta = –25 °C
I
= –2 A
D
25 °C
–1 A
2
–0.5 A
75 °C
V
= –4 V
GS
1
–2 A
0.5
–0.5, –1 A
–10 V
0
0.2
–40
0
40
80
120
160
–0.1 –0.2
–0.5 –1 –2
–5 –10
Case Temperature Tc (°C)
Drain Current
I
(A)
D
5
HAT1038R/HAT1038RJ
Body–Drain Diode Reverse
Typical Capacitance vs.
Drain to Source Voltage
Recovery Time
2000
1000
500
500
V
= 0
GS
f = 1 MHz
200
100
50
Ciss
200
100
Coss
20
50
Crss
–30
di / dt = 50 A / µs
= 0, Ta = 25 °C
10
5
20
10
V
GS
–0.1 –0.2 –0.5 –1 –2
–5 –10
(A)
0
–10
–20
–40
DS
–50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
Switching Characteristics
= –10 V, V = –30 V
Dynamic Input Characteristics
1000
0
–20
–40
–60
0
V
I
= –3.5 A
V
= –10 V
–25 V
D
DD
DD
GS
Pw = 5 µs, duty < 1 %
300
100
–50 V
–4
–8
–12
t
d(off)
t
f
V
GS
30
10
V
t
DS
r
t
d(on)
V
= –50 V
–25 V
DD
–80
–16
–20
3
1
–10 V
–100
0
32
Gate Charge Qg (nc)
–0.1 –0.2
–0.5 –1 –2
Drain Current
–5
(A)
8
16
24
40
–10
I
D
6
HAT1038R/HAT1038RJ
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
–4
–2
2.5
2.0
1.5
1.0
I
V
= –3.5 A
AP
= –25 V
DD
L = 100 µH
duty < 0.1 %
Rg > 50
Ω
–10 V
V
= 0, 5 V
GS
–5 V
0.5
0
Pulse Test
0
–0.4 –0.8 –1.2
–1.6
–2.0
(V)
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
SD
Avalanche Waveform
Avalanche Test Circuit
L
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
-15 V
50Ω
V
DD
0
Switching Time Test Circuit
Switching Time Waveform
10%
Vout
Monitor
Vin Monitor
Vin
D.U.T.
R
L
90%
90%
V
DD
= –30 V
Vin
-10 V
90%
10%
50Ω
10%
Vout
td(off)
tr
td(on)
t
f
7
HAT1038R/HAT1038RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 125 °C/W, Ta = 25 °C
0.01
0.001
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 166 °C/W, Ta = 25 °C
0.01
0.001
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
8
HAT1038R/HAT1038RJ
Package Dimensions
Unit: mm
5.0 Max
5
8
1
4
6.2 Max
0 – 8°
1.27 Max
1.27
0.51 Max
0.15
0.25
FP–8DA
—
Hitachi code
EIAJ
M
MS-012AA
JEDEC
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
©2020 ICPDF网 联系我们和版权申明