HAT1036R [HITACHI]
Silicon P Channel Power MOS FET Power Switching; 硅P沟道功率MOS FET电源开关
| 型号： | HAT1036R |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel Power MOS FET Power Switching |
| 文件： | 总9页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1036R
Silicon P Channel Power MOS FET
Power Switching
ADE-208-662D (Z)
5th. Edition
February 1999
Features
•
Low on-resistance
RDS(on) = 11 mΩ typ
•
•
•
Capable of -4 V gate drive
Low drive current
High density mounting
Outline
SOP–8
5
6
7
8
4
3
2
5 6
7
8
1
D D
D
D
4
G
1, 2, 3
4
Source
Gate
5, 6, 7, 8 Drain
S
1
S
2
S
3
HAT1036R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
-30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
ID(pulse)
±20
V
-12
A
Note1
Drain peak current
-96
A
Body-drain diode reverse drain current IDR
-12
A
Channel dissipation
Pch Note2
2.5
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = -10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = -30 V, VGS = 0
VDS = -10 V, I D = -1 mA
ID = -6 A, VGS = -10 VNote1
ID = -6 A, VGS = -4 VNote1
ID = -6 A, VDS = -10 V Note1
VDS = -10 V
Drain to source breakdown voltage V(BR)DSS -30
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
-1.0
—
—
12
—
—
—
—
—
—
—
—
—
—
—
—
—
±0.1
-1
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
-2.5
14
34
—
11
mΩ
mΩ
S
21
Forward transfer admittance
Input capacitance
20
Ciss
Coss
Crss
Qg
4200
870
360
70
—
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
VGS = 0
—
f = 1 MHz
—
VDD = -10 V
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
Qgd
td(on)
tr
12
—
VGS = -10 V
14
—
ID = -12 A
120
350
100
120
—
VGS = -4 V, ID = -6 A
VDD -10 V
Rise time
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
-0.85 -1.11
55
IF = -12 A, VGS = 0Note1
Body–drain diode reverse
recovery time
trr
—
ns
IF = -12 A, VGS = 0
diF/ dt = 20 A/ µs
Note: 1. Pulse test
2
HAT1036R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
4.0
3.0
2.0
1.0
-500
-100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
10 µs
-10
-1
Operation in
this area is
limited by R
DS(on)
-0.1
Ta = 25 °C
1 shot Pulse
-0.01
0
-0.1
50
100
150
200
-0.3
-1
-3
-10 -30 -100
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
-50
-40
-30
-20
-10
-50
-40
-30
-20
-10
-10V
-4 V
V
= -10 V
DS
Pulse Test
-5 V
Pulse Test
-3.5 V
25°C
Tc = 75°C
V
= -3 V
GS
–25°C
0
0
-5
-1
-2
-3
-4
-2
-4
-6
-8
-10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
3
HAT1036R
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
-0.5
-0.4
-0.3
-0.2
-0.1
Pulse Test
Pulse Test
50
V
GS
= -4 V
-10 V
20
10
5
I
= -10 A
D
2
1
-5 A
-2 A
-0.1
0
-4
-8
-12
-16
-20
(V)
-0.2 -0.5 -1 -2 -5 -10 -20
-100
-50
Gate to Source Voltage
V
Drain Current
I
(A)
D
GS
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
100
30
Pulse Test
Tc = –25 °C
40
30
20
10
I
= -2 A, -5 A, -10 A
D
10
75 °C
25 °C
3
1
V
= -4 V
GS
-2 A, -5 A, -10 A
0.3
0.1
V
= -10 V
DS
-10 V
Pulse Test
0
-0.1 -0.3
-3
-1
Drain Current
-30
-10
–40
0
40
80
120
160
-100
Case Temperature Tc (°C)
I
(A)
D
4
HAT1036R
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
100
50
Ciss
3000
1000
Coss
Crss
300
100
20
10
30
10
di/dt = 20 A/µs
V
GS
= 0
V
GS
= 0, Ta = 25°C
f = 1 MHz
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20
(A)
0
-10
-20
-30
-40 -50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
Switching Characteristics
1000
500
0
–10
–20
–30
0
V
= –5 V
–10 V
–25 V
DD
t
r
–4
–8
–12
200
100
50
t
f
t
d(on)
V
V
V
GS
DS
DD
t
d(off)
= –25 V
–10 V
–5 V
–40
–50
–16
–20
20
10
V
= -4 V, V = -10 V
GS
DS
RG = 50Ω , duty < 1 %
I
= –12 A
40
D
0
80
120
160
200
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20
(A)
Drain Current
I
Gate Charge Qg (nc)
D
5
HAT1036R
Reverse Drain Current vs.
Souece to Drain Voltage
50
40
30
20
10
-10 V
V
= 0
GS
-5 V
Pulse Test
-1.6 -2.0
0
-0.4
-0.8
-1.2
Source to Drain Voltage
V
(V)
SD
Normalized Transient Thermal Impedance vs. Pulse Width
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 83.3 °C/W, Ta = 25 °C
0.01
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
10 µ
100 µ
1 m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
6
HAT1036R
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
R
L
90%
90%
V
DD
Vin
–4 V
90%
10%
50Ω
= –10 V
10%
Vout
td(off)
td(on)
t
f
tr
7
HAT1036R
Package Dimensions
Unit: mm
5.0 Max
8
5
1
4
6.2 Max
0 – 8°
1.27 Max
1.27
0.51 Max
0.15
0.25
FP–8DA
—
Hitachi code
EIAJ
M
MS-012AA
JEDEC
8
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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