2SK2796S [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK2796S |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-534C (Z)
4th. Edition
Jun 1998
Features
•
Low on-resistance
RDS(on) = 0.12Ω typ.
4V gate drive devices.
High speed switching
•
•
Outline
DPAK |1
4
4
D
1
2
3
G
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
ID
±20
V
5
A
Note1
Drain peak current
ID(pulse)
20
A
Body-drain diode reverse drain current IDR
5
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
5
A
EAR
2.14
mJ
W
°C
°C
Pch Note2
20
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2796(L), 2SK2796(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 60
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 3 A, VGS = 10VNote4
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
IDSS
—
—
1.0
—
—
10
µA
µA
V
IGSS
—
±10
2.0
0.16
VGS(off)
RDS(on)
—
Static drain to source on state
resistance
0.12
Ω
Static drain to source on state
resistance
RDS(on)
—
0.16
0.25
Ω
ID = 3A, VGS = 4VNote4
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
2.5
—
—
—
—
—
—
—
—
—
4.0
180
90
30
9
—
—
—
—
—
—
—
—
—
—
S
ID = 3A, VDS = 10VNote4
VDS = 10V
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
f = 1MHz
VGS = 10V, ID = 3A
RL = 10Ω
25
35
55
1.0
40
Turn-off delay time
Fall time
td(off)
tf
Body–drain diode forward voltage VDF
IF = 5A, VGS = 0
Body–drain diode reverse
recovery time
trr
ns
IF = 5A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
3
2SK2796(L), 2SK2796(S)
Main Characteristics
Power vs. Temperature Derating
40
Maximum Safe Operation Area
100
30
10
30
20
10
DC Operation (Tc = 25°C)
3
1
Operation in
this area is
limited by R
DS(on)
5
0.3
0.1
Ta = 25°C
0
50
100
150
200
0.2 0.5
1
2
10 20
50 100
(V)
Drain to Source Voltage
V
DS
Ambient Temperature Ta (°C)
Typical Output Characteristics
6 V
Typical Transfer Characteristics
10 V
5
5
4
3
2
1
5 V
4 V
3.5 V
25°C
–25°C
Pulse Test
3 V
4
3
2
1
Tc = 75°C
2.5 V
V
= 10 V
DS
V
= 2 V
8
GS
Pulse Test
0
0
2
4
6
8
(V)
GS
10
2
4
6
10
Gate to Source Voltage
V
Drain to Source Voltage
V
(V)
DS
4
2SK2796(L), 2SK2796(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
2
1
0.5
I
= 5 A
D
V
GS
= 4 V
10 V
0.2
0.1
2 A
1 A
0.05
6
0
2
4
8
10
0.1 0.3
1
3
10
30
(A)
100
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
10
5
0.5
Pulse Test
Tc = –25 °C
0.4
0.3
0.2
0.1
1 A
25 °C
2 A
2
I
= 5 A
D
75 °C
1
V
= 4 V
GS
0.5
5 A
1, 2 A
0.2
0.1
V
= 10 V
DS
Pulse Test
10 V
0
–40
0.5
1
2
5
0
40
80
120
160
0.1 0.2
10
Case Temperature Tc (°C)
Drain Current
I
(A)
D
5
2SK2796(L), 2SK2796(S)
Body–Drain Diode Reverse
Typical Capacitance vs.
Drain to Source Voltage
Recovery Time
1000
500
500
V
GS
= 0
f = 1 MHz
200
200
100
50
100
50
Ciss
Coss
20
10
20
10
di / dt = 50 A / µs
Crss
40
V
= 0, Ta = 25 °C
GS
5
0.1 0.2
0.5
1
2
5
10
0
10
20
30
50
Reverse Drain Current
I
(A)
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 5 A
Switching Characteristics
100
80
60
40
20
20
100
50
I
D
t
d(off)
V
= 10 V
25 V
16
12
8
DD
t
f
t
50 V
r
20
V
DS
t
d(on)
10
5
V
GS
4
0
V
= 50 V
25 V
DD
V
= 10 V, V
GS
= 30 V
2
1
DD
PW = 5 µs, duty < 1 %
10 V
0
0.5
1
2
5
2
4
6
8
10
0.1 0.2
10
Gate Charge Qg (nc)
Drain Current
I
(A)
D
6
2SK2796(L), 2SK2796(S)
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10
8
2.5
2.0
1.5
1.0
I
= 5 A
AP
V
= 25 V
DD
duty < 0.1 %
5 V
W
Rg > 50
6
10 V
V
= 0, –5 V
GS
4
2
0.5
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage
V
(V)
Channel Temperature Tch (°C)
SD
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50W
V
DD
0
7
2SK2796(L), 2SK2796(S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
q
q
g
q
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50W
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK2796(L), 2SK2796(S)
Package Dimensions
Unit: mm
2.3 ± 0.5
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.5
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
0 ~ 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
1.5 Max
DPAK
SC–63
SC–64
—
Hitachi Code
EIAJ ( L type)
EIAJ ( S type)
JEDEC
type
type
S
L
9
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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