GJ5103 [GTM]
NPN HIGH SPEED SWITCHING TRANSISTOR; NPN高速开关晶体管
| 型号： | GJ5103 |
| 厂家： | 
GTM CORPORATION |
| 描述： | NPN HIGH SPEED SWITCHING TRANSISTOR |
| 文件： | 总3页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISSUED DATE :2005/10/03
REVISED DATE :
GTM
CORPORATION
GJ5103
N P N H I G H S P E E D S W I T C H I N G T R A N S I S T O R
Description
The GJ5103 is designed for high speed switching applications.
Features
ԦLow saturation voltage, typically VCE(sat) =0.15V at I
C
/I
B=3A/0.15A
ԦHigh speed switching, typically tf =0.1ꢀs at I
ԦWide SOA
C=3A
ԦComplements to GJ1952
Package Dimensions
TO-252
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Min.
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
M
R
0.50
2.20
0.45
0
2.30 REF.
0.90
5.40
0.80
0.70
0.60
0.90
0.90
S
Absolute Maximum Ratings (T
Parameter
A
=25к)
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
V
V
V
CBO
CEO
100
60
5
V
V
V
EBO
Collector Current (DC)
Collector Current (Pulse PW=100ms)
Total Device Dissipation (T
Total Device Dissipation (T
Junction Temperature
I
I
P
P
T
C
C
5
10
1
A
A
W
W
к
к
A
=25к)
=25к)
D
D
C
10
150
-55 ~ +150
J
Storage Temperature
T
stg
Electrical Characteristics (T
A = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
-
-
Unit
V
V
Test Conditions
BVCBO
100
-
I
I
I
V
V
I
I
I
I
V
V
V
V
C
=50uA, I
=1mA, I
=50uA, I
CB=100V, I
EB=5V, I =0
=3A, I
=4A, I
=3A, I
=4A, I
E
=0
=0
=0
=0
BVCEO
BVEBO
60
5
-
-
C
B
-
V
E
C
I
I
CBO
-
-
-
-
10
10
0.3
0.5
1.2
1.5
270
-
uA
uA
V
V
V
E
EBO
C
*VCE(sat)
*VCE(sat)
1
2
-
-
0.15
-
C
B
B
B
B
=0.15A
=0.2A
=0.15A
=0.2A
C
C
C
*VBE(sat)
*VBE(sat)
1
2
-
-
-
-
V
*hFE
*hFE
fT
1
2
120
40
-
-
-
CE=2V, I
CE=2V, I
C
=1A
=3A
C
210
80
-
-
MHz
pF
CB=10V, I
CE=10V, I
E
=-0.5A, f=30MHz
=0, f=1MHz
Cob
-
E
GJ5103
Page: 1/3
ISSUED DATE :2005/10/03
REVISED DATE :
GTM
CORPORATION
t
t
t
on (Turn-on Time)
stg (Storage Time)
-
-
-
-
-
0.3
1.5
0.3
I
I
C
=3A , R
B1=-IB2=0.15A
CC≈30V
L=10ꢁ
uS
V
f
(Fall Time)
0.1
*Measure using pulse current
Switching Time Test Circuit
Characteristics Curve
GJ5103
Page: 2/3
ISSUED DATE :2005/10/03
REVISED DATE :
GTM
CORPORATION
Important Notice:
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ó
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ5103
Page: 3/3
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