GJ60L02 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GJ60L02 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/12B
GTM
CORPORATION
BVDSS
DS(ON)
25V
13mꢀ
50A
GJ60L02
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ60L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
25
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
50
A
C
=100к
32
A
180
A
Total Power Dissipation
C
62.5
0.5
W
Linear Derating Factor
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
GJ60L02
Page: 1/5
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/12B
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
25
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
0.037
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
30
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-
1
25
13
26
-
VDS=25V, VGS=0
VDS=20V, VGS=0
VGS=10V, ID=25A
VGS=4.5V, ID=20A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
-
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
21
2.8
16
8
Qg
Qgs
Qgd
Td(on)
Tr
ID=25A
nC
-
-
VDS=20V
VGS=5V
-
-
-
-
VDS=15V
ID=20A
-
75
22
20
605
415
195
-
ns
VGS=10V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=0.75ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.26
50
Unit
V
Test Conditions
-
-
-
-
VSD
IS=50A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD=VG=0V, VS=1.26V
1
Pulsed Source Current (Body Diode
)
180
A
ISM
Drain-Source Avalanche Ratings
Parameter
Single Pulse Avalanche Energy2
Avalanche Current
Symbol Min.
Typ.
Max.
61
Unit
mJ
A
Test Conditions
-
-
-
EAS
V
DD=25V, ID=35A, L=100uH
VGS=10V,
-
35
IAR
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GJ60L02
Page: 2/5
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/12B
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ60L02
Page: 3/5
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/12B
GTM
CORPORATION
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
GJ60L02
Page: 4/5
ISSUED DATE :2005/02/22
REVISED DATE :2005/12/12B
GTM
CORPORATION
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ60L02
Page: 5/5
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