GJ772 [GTM]

PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
GJ772
型号: GJ772
厂家: GTM CORPORATION    GTM CORPORATION
描述:

PNP EPITAXIAL PLANAR TRANSISTOR
PNP外延平面晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:163K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISSUED DATE :2002/12/13  
REVISED DATE :2005/08/10B  
GTM  
CORPORATION  
GJ772  
P N P E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
The GJ772 is designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and  
relay driver.  
Package Dimensions  
TO-252  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
3.00  
Min.  
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.40  
G
H
J
K
L
M
R
0.50  
2.20  
0.45  
0
2.30 REF.  
0.90  
5.40  
0.80  
0.70  
0.60  
0.90  
0.90  
S
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Tj  
Ratings  
+150  
-55~+150  
Unit  
к
к
V
V
V
A
A
A
W
Tstg  
VCBO  
-40  
-30  
-5  
-3  
-7  
VCEO  
VEBO  
IC  
IC  
IB  
Collector Current (Pulse)  
Base Current  
-0.6  
10  
Total Power Dissipation(T  
C
=25к)  
PD  
Electrical Characteristics (Ta = 25к)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-40  
-30  
-5  
-
-
-
-
-
-
I
I
I
V
V
I
I
V
V
V
V
C
=-100uA , I  
=-1mA, I =0  
=0  
=0  
=0  
E=0  
C
B
V
E=-10uA ,I  
C
I
I
CBO  
-
-
-
-
-
-
-1  
-1  
-0.5  
-2  
-
500  
-
-
uA  
uA  
V
CB=-30V, I  
EB=-3V, I  
E
EBO  
C
*VCE(sat)  
*VBE(sat)  
*hFE  
*hFE  
fT  
-0.3  
-1  
-
-
80  
55  
C
=-2A, I  
C=-2A, I  
B
=-0.2A  
=-0.2A  
V
B
1
2
30  
100  
-
CE=-2V, I  
CE=-2V, I  
CE=-5V, I  
C
C
C
=-20mA  
=-1A  
MHz  
pF  
=-0.1A, f=100MHz  
CB=-10V, IE=0, f=1MHz  
Cob  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
2
Rank  
Q
P
E
Range  
100 - 200  
160 - 320  
250 - 500  
GJ772  
Page: 1/3  
ISSUED DATE :2002/12/13  
REVISED DATE :2005/08/10B  
GTM  
CORPORATION  
Characteristics Curve  
GJ772  
Page: 2/3  
ISSUED DATE :2002/12/13  
REVISED DATE :2005/08/10B  
GTM  
CORPORATION  
Important Notice:  
ó
ó
ó
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.  
GTM reserves the right to make changes to its products without notice.  
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.  
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.  
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785  
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China  
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165  
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GJ772  
Page: 3/3  

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